DE60332241D1 - Verfahren zur vergrösserung der fläche einer nutzschicht eines auf eine stütze übertragenen materials - Google Patents

Verfahren zur vergrösserung der fläche einer nutzschicht eines auf eine stütze übertragenen materials

Info

Publication number
DE60332241D1
DE60332241D1 DE60332241T DE60332241T DE60332241D1 DE 60332241 D1 DE60332241 D1 DE 60332241D1 DE 60332241 T DE60332241 T DE 60332241T DE 60332241 T DE60332241 T DE 60332241T DE 60332241 D1 DE60332241 D1 DE 60332241D1
Authority
DE
Germany
Prior art keywords
outline
substrate
flat
zone
increasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332241T
Other languages
English (en)
Inventor
Christophe Maleville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0209020A external-priority patent/FR2842649B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Application granted granted Critical
Publication of DE60332241D1 publication Critical patent/DE60332241D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Coating Apparatus (AREA)
DE60332241T 2002-07-17 2003-07-16 Verfahren zur vergrösserung der fläche einer nutzschicht eines auf eine stütze übertragenen materials Expired - Lifetime DE60332241D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0209020A FR2842649B1 (fr) 2002-07-17 2002-07-17 Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
US47313703P 2003-05-27 2003-05-27
PCT/EP2003/007856 WO2004025722A1 (en) 2002-07-17 2003-07-16 A method of increasing the area of a useful layer of material transferred onto a support

Publications (1)

Publication Number Publication Date
DE60332241D1 true DE60332241D1 (de) 2010-06-02

Family

ID=31995626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332241T Expired - Lifetime DE60332241D1 (de) 2002-07-17 2003-07-16 Verfahren zur vergrösserung der fläche einer nutzschicht eines auf eine stütze übertragenen materials

Country Status (7)

Country Link
EP (1) EP1522098B1 (de)
JP (1) JP4652053B2 (de)
AT (1) ATE465513T1 (de)
AU (1) AU2003246719A1 (de)
DE (1) DE60332241D1 (de)
TW (1) TWI266381B (de)
WO (1) WO2004025722A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4531694B2 (ja) * 2002-07-17 2010-08-25 エス．オー．アイ．テック、シリコン、オン、インシュレター、テクノロジーズ 支持体に転移する材料から成る有用な層の面積を拡大する方法
JP5339166B2 (ja) * 2008-10-27 2013-11-13 チョ，マンス 水洗い可能なシルク素材の柔軟剤処理方法
CN106847739B (zh) * 2015-12-04 2018-08-31 上海新微技术研发中心有限公司 一种绝缘体上硅材料的制造方法
TWI668739B (zh) * 2018-04-03 2019-08-11 環球晶圓股份有限公司 磊晶基板及其製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636413B2 (ja) * 1990-03-29 1994-05-11 信越半導体株式会社 半導体素子形成用基板の製造方法
JP2825048B2 (ja) * 1992-08-10 1998-11-18 信越半導体株式会社 半導体シリコン基板
JP3542521B2 (ja) * 1999-06-08 2004-07-14 キヤノン株式会社 半導体基体及び太陽電池の製造方法と陽極化成装置
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
EP1189266B1 (de) * 2000-03-29 2017-04-05 Shin-Etsu Handotai Co., Ltd. Methode zur herstellung einer siliziumhalbleiterscheibe und einer soi-scheibe soiwe soi-scheibe
JP4846915B2 (ja) * 2000-03-29 2011-12-28 信越半導体株式会社 貼り合わせウェーハの製造方法
JP2001284622A (ja) * 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法

Also Published As

Publication number Publication date
AU2003246719A1 (en) 2004-04-30
WO2004025722A1 (en) 2004-03-25
JP2005533394A (ja) 2005-11-04
TWI266381B (en) 2006-11-11
ATE465513T1 (de) 2010-05-15
TW200423294A (en) 2004-11-01
JP4652053B2 (ja) 2011-03-16
EP1522098A1 (de) 2005-04-13
EP1522098B1 (de) 2010-04-21

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