JP2008124480A5 - - Google Patents

Download PDF

Info

Publication number
JP2008124480A5
JP2008124480A5 JP2007302263A JP2007302263A JP2008124480A5 JP 2008124480 A5 JP2008124480 A5 JP 2008124480A5 JP 2007302263 A JP2007302263 A JP 2007302263A JP 2007302263 A JP2007302263 A JP 2007302263A JP 2008124480 A5 JP2008124480 A5 JP 2008124480A5
Authority
JP
Japan
Prior art keywords
thin film
crystal
lattice
forming
lattices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007302263A
Other languages
English (en)
Japanese (ja)
Other versions
JP4954853B2 (ja
JP2008124480A (ja
Filing date
Publication date
Priority claimed from FR0012796A external-priority patent/FR2815121B1/fr
Application filed filed Critical
Publication of JP2008124480A publication Critical patent/JP2008124480A/ja
Publication of JP2008124480A5 publication Critical patent/JP2008124480A5/ja
Application granted granted Critical
Publication of JP4954853B2 publication Critical patent/JP4954853B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007302263A 2000-10-06 2007-11-21 ２つの固体材料の分子接着界面における結晶欠陥および／または応力場の顕在化プロセス Expired - Fee Related JP4954853B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0012796 2000-10-06
FR0012796A FR2815121B1 (fr) 2000-10-06 2000-10-06 Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002533358A Division JP2004511102A (ja) 2000-10-06 2001-10-05 ２つの固体材料の分子接着界面における結晶欠陥および／または応力場の顕在化プロセス

Publications (3)

Publication Number Publication Date
JP2008124480A JP2008124480A (ja) 2008-05-29
JP2008124480A5 true JP2008124480A5 (enExample) 2010-11-11
JP4954853B2 JP4954853B2 (ja) 2012-06-20

Family

ID=8855073

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002533358A Pending JP2004511102A (ja) 2000-10-06 2001-10-05 ２つの固体材料の分子接着界面における結晶欠陥および／または応力場の顕在化プロセス
JP2007302263A Expired - Fee Related JP4954853B2 (ja) 2000-10-06 2007-11-21 ２つの固体材料の分子接着界面における結晶欠陥および／または応力場の顕在化プロセス

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2002533358A Pending JP2004511102A (ja) 2000-10-06 2001-10-05 ２つの固体材料の分子接着界面における結晶欠陥および／または応力場の顕在化プロセス

Country Status (7)

Country Link
US (1) US7041227B2 (enExample)
EP (1) EP1332517B1 (enExample)
JP (2) JP2004511102A (enExample)
AT (1) ATE451716T1 (enExample)
DE (1) DE60140760D1 (enExample)
FR (1) FR2815121B1 (enExample)
WO (1) WO2002029876A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281878A (ja) * 2003-03-18 2004-10-07 Seiko Epson Corp 半導体基板の製造方法及びこれにより製造される半導体基板、電気光学装置並びに電子機器
JP2005279843A (ja) * 2004-03-29 2005-10-13 Univ Of Tokyo 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス
US7495266B2 (en) * 2004-06-16 2009-02-24 Massachusetts Institute Of Technology Strained silicon-on-silicon by wafer bonding and layer transfer
FR2876498B1 (fr) * 2004-10-12 2008-03-14 Commissariat Energie Atomique Procede de realisation d'heterostructures resonnantes a transport planaire
FR2877662B1 (fr) 2004-11-09 2007-03-02 Commissariat Energie Atomique Reseau de particules et procede de realisation d'un tel reseau.
US7535089B2 (en) * 2005-11-01 2009-05-19 Massachusetts Institute Of Technology Monolithically integrated light emitting devices
US20070252223A1 (en) * 2005-12-05 2007-11-01 Massachusetts Institute Of Technology Insulated gate devices and method of making same
FR2895391B1 (fr) * 2005-12-27 2008-01-25 Commissariat Energie Atomique Procede d'elaboration de nanostructures ordonnees
FR2895419B1 (fr) 2005-12-27 2008-02-22 Commissariat Energie Atomique Procede de realisation simplifiee d'une structure epitaxiee
FR2896493B1 (fr) * 2006-01-23 2008-02-22 Commissariat Energie Atomique Procede d'elaboration d'un support pour la croissance de nanostructures allongees localisees
US8063397B2 (en) * 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
FR2903810B1 (fr) * 2006-07-13 2008-10-10 Commissariat Energie Atomique Procede de nanostructuration de la surface d'un substrat
JP2009063202A (ja) * 2007-09-05 2009-03-26 Daikin Ind Ltd 放熱器およびそれを備えた冷凍装置
FR2925748B1 (fr) 2007-12-21 2010-01-29 Commissariat Energie Atomique Support de stockage de donnees et procede associe

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2766620B1 (fr) * 1997-07-22 2000-12-01 Commissariat Energie Atomique Realisation de microstructures ou de nanostructures sur un support
FR2767604B1 (fr) * 1997-08-19 2000-12-01 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
JP3031904B2 (ja) * 1998-02-18 2000-04-10 キヤノン株式会社 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法
FR2784800B1 (fr) * 1998-10-20 2000-12-01 Commissariat Energie Atomique Procede de realisation de composants passifs et actifs sur un meme substrat isolant
AU2049801A (en) * 1999-12-09 2001-06-18 Cornell Research Foundation Inc. Fabrication of periodic surface structures with nanometer-scale spacings

Similar Documents

Publication Publication Date Title
JP2008124480A5 (enExample)
JP2013021313A5 (ja) 半導体装置
JP2009094496A5 (enExample)
JP2010514099A5 (enExample)
JP2011100997A5 (ja) 半導体装置
WO2009037889A1 (ja) 液晶表示装置及びその製造方法
JP2010540774A5 (enExample)
EP1950177A4 (en) SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD AND THIN FILM TRANSISTOR
JP2011506457A5 (enExample)
JP2012159778A5 (ja) 偏光性積層フィルム、偏光板または基材フィルム付き偏光板の製造方法
JP2008537792A5 (enExample)
EP2360701A4 (en) SUBSTRATE FOR FORMING A SUPERLAYABLE FILM, MATERIAL FOR A SUPER-SEAMED WIRE AND PRODUCTION METHOD THEREFOR
JP2009031774A5 (enExample)
JP2012002866A5 (enExample)
JP6501715B2 (ja) 積層体、及びガスバリアフィルム
TWI539638B (zh) Organic electroluminescent light sealing device
JP2013191656A5 (enExample)
CN107249888B (zh) 阻气性膜的制造方法及阻气性膜
KR20080073941A (ko) 플렉서블 디스플레이 장치 제조방법
TW201238067A (en) Photovoltaic (PV) PSA composite and use for producing PV modules by embedding into a liquid
EP1918429A4 (en) ALUMINUM NITRIDE MONOCRYSTAL FILM, ALUMINUM NITRIDE MONOCRYSTAL LAMINATED SUBSTRATE AND METHODS OF MAKING SAME
JP2012088470A5 (ja) 液晶表示素子の製造方法
JP6237473B2 (ja) ガスバリア性フィルムの製造方法
TW200640283A (en) Method of manufacturing an organic electronic device
JP2003347522A5 (enExample)