ATE438952T1 - Verfahren zur herstellung eines auf einem trägersubstrat geformten piezoelektrischen filters mit einem akustischen resonator auf einer akustischen reflektorschicht - Google Patents

Verfahren zur herstellung eines auf einem trägersubstrat geformten piezoelektrischen filters mit einem akustischen resonator auf einer akustischen reflektorschicht

Info

Publication number
ATE438952T1
ATE438952T1 AT01909736T AT01909736T ATE438952T1 AT E438952 T1 ATE438952 T1 AT E438952T1 AT 01909736 T AT01909736 T AT 01909736T AT 01909736 T AT01909736 T AT 01909736T AT E438952 T1 ATE438952 T1 AT E438952T1
Authority
AT
Austria
Prior art keywords
acoustic
reflector layer
producing
support substrate
piezoelectric filter
Prior art date
Application number
AT01909736T
Other languages
English (en)
Inventor
Ronald Dekker
Henricus Maas
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE438952T1 publication Critical patent/ATE438952T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
AT01909736T 2000-02-22 2001-02-09 Verfahren zur herstellung eines auf einem trägersubstrat geformten piezoelektrischen filters mit einem akustischen resonator auf einer akustischen reflektorschicht ATE438952T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00200615 2000-02-22
PCT/EP2001/001502 WO2001063759A1 (en) 2000-02-22 2001-02-09 Method of manufacturing a piezoeletric filter with an acoustic resonator situated on an acoustic reflector layer formed on a carrier substrate

Publications (1)

Publication Number Publication Date
ATE438952T1 true ATE438952T1 (de) 2009-08-15

Family

ID=8171062

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01909736T ATE438952T1 (de) 2000-02-22 2001-02-09 Verfahren zur herstellung eines auf einem trägersubstrat geformten piezoelektrischen filters mit einem akustischen resonator auf einer akustischen reflektorschicht

Country Status (8)

Country Link
US (1) US6698073B2 (de)
EP (1) EP1177623B1 (de)
JP (1) JP4820520B2 (de)
KR (1) KR100697398B1 (de)
AT (1) ATE438952T1 (de)
DE (1) DE60139444D1 (de)
TW (1) TW527770B (de)
WO (1) WO2001063759A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791657B1 (ko) * 2000-02-22 2008-01-03 엔엑스피 비 브이 하이브리드 집적 회로 제조 방법
KR20030032401A (ko) * 2001-10-18 2003-04-26 한국쌍신전기주식회사 압전박막형 공진기 및 그 제조방법
KR100538654B1 (ko) * 2001-10-18 2005-12-26 쌍신전자통신주식회사 압전박막 공진기 및 그 제조방법
KR20020029882A (ko) * 2002-03-02 2002-04-20 주식회사 에이엔티 엘시엠피 공정법에 의한 탄성파소자의 제작방법
KR100483340B1 (ko) * 2002-10-22 2005-04-15 쌍신전자통신주식회사 체적탄성파 소자 및 그 제조방법
JP4680561B2 (ja) * 2004-10-06 2011-05-11 京セラキンセキ株式会社 圧電薄膜素子の製造方法
US7618454B2 (en) * 2005-12-07 2009-11-17 Zimmer Spine, Inc. Transforaminal lumbar interbody fusion spacers
EP1997638B1 (de) * 2007-05-30 2012-11-21 Océ-Technologies B.V. Verfahren zur Erzeugung eines Arrays piezoelektrischer Aktuatoren auf einer Membran
US20120163131A1 (en) * 2010-12-22 2012-06-28 Sondex Limited Mono-directional Ultrasound Transducer for Borehole Imaging
DE102012107155B4 (de) * 2012-08-03 2017-07-13 Snaptrack, Inc. Topografische Struktur und Verfahren zu deren Herstellung
FR3079345B1 (fr) * 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence

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US4990814A (en) * 1989-11-13 1991-02-05 United Technologies Corporation Separated substrate acoustic charge transport device
US5320977A (en) * 1990-02-06 1994-06-14 United Technologies Corporation Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices
JPH0478471A (ja) * 1990-07-19 1992-03-12 Shimada Phys & Chem Ind Co Ltd 超音波振動体及びその製造方法
US5298772A (en) * 1992-02-28 1994-03-29 Honeywell Inc. Integrated heterostructure acoustic charge transport (HACT) and heterostructure insulated gate field effects transistor (HIGFET) devices
US5373268A (en) * 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
AT398707B (de) * 1993-05-11 1995-01-25 Trampler Felix Mehrschichtiger piezoelektrischer resonator für die separation von suspendierten teilchen
JPH0738363A (ja) * 1993-05-18 1995-02-07 Matsushita Electric Ind Co Ltd 電子部品の加工方法
US5626767A (en) * 1993-07-02 1997-05-06 Sonosep Biotech Inc. Acoustic filter for separating and recycling suspended particles
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
US5821833A (en) * 1995-12-26 1998-10-13 Tfr Technologies, Inc. Stacked crystal filter device and method of making
JP3809712B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 薄膜デバイスの転写方法
US5873154A (en) * 1996-10-17 1999-02-23 Nokia Mobile Phones Limited Method for fabricating a resonator having an acoustic mirror
FR2756447B1 (fr) * 1996-11-26 1999-02-05 Thomson Csf Sonde acoustique multielements comprenant une electrode de masse commune
US5872493A (en) * 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
US5910756A (en) * 1997-05-21 1999-06-08 Nokia Mobile Phones Limited Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators
US6208062B1 (en) * 1997-08-18 2001-03-27 X-Cyte, Inc. Surface acoustic wave transponder configuration
JP3521708B2 (ja) * 1997-09-30 2004-04-19 セイコーエプソン株式会社 インクジェット式記録ヘッドおよびその製造方法
JPH11163654A (ja) * 1997-11-28 1999-06-18 Matsushita Electric Ind Co Ltd 補強された圧電基板の製造方法

Also Published As

Publication number Publication date
DE60139444D1 (de) 2009-09-17
EP1177623A1 (de) 2002-02-06
KR100697398B1 (ko) 2007-03-20
US6698073B2 (en) 2004-03-02
WO2001063759A1 (en) 2001-08-30
US20010023084A1 (en) 2001-09-20
JP4820520B2 (ja) 2011-11-24
EP1177623B1 (de) 2009-08-05
TW527770B (en) 2003-04-11
KR20010110779A (ko) 2001-12-13
JP2003524981A (ja) 2003-08-19

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