ATE437978T1 - Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd - Google Patents

Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd

Info

Publication number
ATE437978T1
ATE437978T1 AT06725524T AT06725524T ATE437978T1 AT E437978 T1 ATE437978 T1 AT E437978T1 AT 06725524 T AT06725524 T AT 06725524T AT 06725524 T AT06725524 T AT 06725524T AT E437978 T1 ATE437978 T1 AT E437978T1
Authority
AT
Austria
Prior art keywords
nitride film
cvd
silicon
deposing
silicon oxide
Prior art date
Application number
AT06725524T
Other languages
English (en)
Inventor
Christian Dussarrat
Original Assignee
L Air Liquide Soc Anon A Direc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L Air Liquide Soc Anon A Direc filed Critical L Air Liquide Soc Anon A Direc
Application granted granted Critical
Publication of ATE437978T1 publication Critical patent/ATE437978T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT06725524T 2006-04-03 2006-04-03 Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd ATE437978T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/061284 WO2007112780A1 (en) 2006-04-03 2006-04-03 Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition

Publications (1)

Publication Number Publication Date
ATE437978T1 true ATE437978T1 (de) 2009-08-15

Family

ID=37571840

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06725524T ATE437978T1 (de) 2006-04-03 2006-04-03 Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd

Country Status (8)

Country Link
US (1) US8377511B2 (de)
EP (1) EP2007917B1 (de)
JP (1) JP5149273B2 (de)
KR (1) KR101304726B1 (de)
CN (1) CN101466865A (de)
AT (1) ATE437978T1 (de)
DE (1) DE602006008190D1 (de)
WO (1) WO2007112780A1 (de)

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SG182336A1 (en) 2010-01-06 2012-08-30 Applied Materials Inc Flowable dielectric using oxide liner
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EP2553141A4 (de) * 2010-04-01 2013-08-21 Air Liquide Ablagerung eines metallnitridhaltigen films mit einer kombination aus aminometall- und halogenierten metall-vorläufern
US8580699B2 (en) 2010-09-10 2013-11-12 Applied Materials, Inc. Embedded catalyst for atomic layer deposition of silicon oxide
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN105849221B (zh) 2013-09-27 2019-06-18 乔治洛德方法研究和开发液化空气有限公司 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物
US20150303060A1 (en) 2014-04-16 2015-10-22 Samsung Electronics Co., Ltd. Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US9472392B2 (en) 2015-01-30 2016-10-18 Applied Materials, Inc. Step coverage dielectric
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9899210B2 (en) 2015-10-20 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
KR102241936B1 (ko) * 2016-03-17 2021-04-20 주식회사 원익아이피에스 실리콘산질화막의 증착방법
TWI753794B (zh) 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
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TWI784022B (zh) * 2017-07-31 2022-11-21 中國大陸商南大光電半導體材料有限公司 1,1,1-參(二甲胺基)二矽烷及其製備方法
JP7113670B2 (ja) * 2018-06-08 2022-08-05 東京エレクトロン株式会社 Ａｌｄ成膜方法およびａｌｄ成膜装置
CN110983300B (zh) * 2019-12-04 2023-06-20 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其应用
CN114634364B (zh) * 2022-03-08 2023-08-11 中国科学院过程工程研究所 一种纯相Si2N2O粉体的合成方法

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Also Published As

Publication number Publication date
WO2007112780A1 (en) 2007-10-11
US20100221428A1 (en) 2010-09-02
KR101304726B1 (ko) 2013-09-05
US8377511B2 (en) 2013-02-19
EP2007917B1 (de) 2009-07-29
EP2007917A1 (de) 2008-12-31
JP2009532582A (ja) 2009-09-10
JP5149273B2 (ja) 2013-02-20
DE602006008190D1 (de) 2009-09-10
KR20090009844A (ko) 2009-01-23
CN101466865A (zh) 2009-06-24

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