ATE431441T1 - Verfahren zur abscheidung von elektrolytfilmen - Google Patents

Verfahren zur abscheidung von elektrolytfilmen

Info

Publication number
ATE431441T1
ATE431441T1 AT03745631T AT03745631T ATE431441T1 AT E431441 T1 ATE431441 T1 AT E431441T1 AT 03745631 T AT03745631 T AT 03745631T AT 03745631 T AT03745631 T AT 03745631T AT E431441 T1 ATE431441 T1 AT E431441T1
Authority
AT
Austria
Prior art keywords
deposit
vapor
phase
component
depositing
Prior art date
Application number
AT03745631T
Other languages
English (en)
Inventor
Yevgen Kalynushkin
Elena Shembel
Peter Novak
Chris Flury
Original Assignee
Ener1 Battery Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ener1 Battery Company filed Critical Ener1 Battery Company
Application granted granted Critical
Publication of ATE431441T1 publication Critical patent/ATE431441T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Secondary Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Inorganic Insulating Materials (AREA)
  • Glass Compositions (AREA)
  • Conductive Materials (AREA)
  • Fuel Cell (AREA)
AT03745631T 2002-03-27 2003-03-26 Verfahren zur abscheidung von elektrolytfilmen ATE431441T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/108,140 US7208195B2 (en) 2002-03-27 2002-03-27 Methods and apparatus for deposition of thin films
PCT/US2003/009375 WO2003083166A1 (en) 2002-03-27 2003-03-26 Methods and apparatus for deposition of thin films

Publications (1)

Publication Number Publication Date
ATE431441T1 true ATE431441T1 (de) 2009-05-15

Family

ID=28452812

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03745631T ATE431441T1 (de) 2002-03-27 2003-03-26 Verfahren zur abscheidung von elektrolytfilmen

Country Status (7)

Country Link
US (2) US7208195B2 (de)
EP (1) EP1497479B1 (de)
AT (1) ATE431441T1 (de)
AU (1) AU2003226086A1 (de)
CA (1) CA2518421A1 (de)
DE (1) DE60327621D1 (de)
WO (1) WO2003083166A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US20050271893A1 (en) * 2004-06-04 2005-12-08 Applied Microstructures, Inc. Controlled vapor deposition of multilayered coatings adhered by an oxide layer
US7700155B1 (en) * 2004-04-08 2010-04-20 Novellus Systems, Inc. Method and apparatus for modulation of precursor exposure during a pulsed deposition process
JP4925569B2 (ja) 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
US8900695B2 (en) * 2007-02-23 2014-12-02 Applied Microstructures, Inc. Durable conformal wear-resistant carbon-doped metal oxide-comprising coating
US20080248263A1 (en) * 2007-04-02 2008-10-09 Applied Microstructures, Inc. Method of creating super-hydrophobic and-or super-hydrophilic surfaces on substrates, and articles created thereby
US8236379B2 (en) * 2007-04-02 2012-08-07 Applied Microstructures, Inc. Articles with super-hydrophobic and-or super-hydrophilic surfaces and method of formation
JP2008311277A (ja) * 2007-06-12 2008-12-25 Elpida Memory Inc 成膜処理装置および成膜処理方法
KR20100102180A (ko) 2007-12-21 2010-09-20 인피니트 파워 솔루션스, 인크. 전해질 막을 위한 표적을 스퍼터링하는 방법
KR101606183B1 (ko) 2008-01-11 2016-03-25 사푸라스트 리써치 엘엘씨 박막 배터리 및 기타 소자를 위한 박막 캡슐화
US8906523B2 (en) 2008-08-11 2014-12-09 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
CN102576828B (zh) 2009-09-01 2016-04-20 萨普拉斯特研究有限责任公司 具有集成薄膜电池的印刷电路板
JP2013528912A (ja) 2010-06-07 2013-07-11 インフィニット パワー ソリューションズ， インコーポレイテッド 再充電可能高密度電気化学素子
US8888918B2 (en) 2011-03-31 2014-11-18 Seagate Technology Llc Vapor collection
US20140302238A1 (en) * 2011-08-24 2014-10-09 Mustang Vacuum Systems, Inc. Apparatus and Method for the Evaporation and Deposition of Materials
US9692039B2 (en) 2012-07-24 2017-06-27 Quantumscape Corporation Nanostructured materials for electrochemical conversion reactions
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
WO2014197751A1 (en) * 2013-06-06 2014-12-11 Quantumscape Corporation Flash evaporation of solid state battery component
EP3111493B1 (de) 2014-02-25 2020-12-09 QuantumScape Corporation Hybridelektroden mit einlagerungs- sowie umwandlungsmaterialien
WO2016025866A1 (en) 2014-08-15 2016-02-18 Quantumscape Corporation Doped conversion materials for secondary battery cathodes
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3640689A (en) * 1970-03-04 1972-02-08 Fansteel Inc Composite hard metal product
JPS59217964A (ja) * 1983-05-26 1984-12-08 Hitachi Ltd 薄膜電池の正極構造
US4436862A (en) * 1983-06-14 1984-03-13 Nl Industries, Inc. Thermally stable thickener
US4715875A (en) * 1984-11-13 1987-12-29 Ispra Fibroptics Industries Herzlia Ltd. Manufacture of optical fibre preforms
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
EP0283311B1 (de) * 1987-03-18 2001-08-01 Kabushiki Kaisha Toshiba Verfahren zur Herstellung von Dünnschichten
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
JPH05326315A (ja) * 1992-05-25 1993-12-10 Itochu Fine Chem Kk 薄膜コンデンサおよびその製造装置
US6432281B2 (en) * 1995-12-20 2002-08-13 Recherche Et Developpement Due Groupe Cockerill Sambre Process for formation of a coating on a substrate
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
FR2762448B1 (fr) 1997-04-22 1999-07-09 Centre Nat Rech Scient Materiau d'electrode positive a base d'oxysulfure de titane pour generateur electrochimique et son procede de preparation
US6045864A (en) * 1997-12-01 2000-04-04 3M Innovative Properties Company Vapor coating method
US6037241A (en) * 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
US6338756B2 (en) * 1998-06-30 2002-01-15 Seh America, Inc. In-situ post epitaxial treatment process
US6040017A (en) * 1998-10-02 2000-03-21 Sigma Laboratories, Inc. Formation of multilayered photonic polymer composites
UA56228C2 (uk) * 1999-11-01 2003-05-15 Міжнародний Центр Електронно-Променевих Технологій Інституту Електрозварювання Ім. Е.О.Патона Нану Композиційний зливок для одержання шляхом випаровування функціонально градієнтного покриття із зовнішнім керамічним шаром на металевій підкладці (варіанти)
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
DE60131698T2 (de) * 2000-05-31 2008-10-30 Tokyo Electron Ltd. Thermische Behandlungsvorrichtung und Verfahren
US7112543B2 (en) * 2001-01-04 2006-09-26 Micron Technology, Inc. Methods of forming assemblies comprising silicon-doped aluminum oxide
US6468595B1 (en) * 2001-02-13 2002-10-22 Sigma Technologies International, Inc. Vaccum deposition of cationic polymer systems
JP4682456B2 (ja) * 2001-06-18 2011-05-11 株式会社日立ハイテクノロジーズ 基板処理方法及び基板処理装置
US20030116432A1 (en) * 2001-12-26 2003-06-26 Applied Materials, Inc. Adjustable throw reactor
US6876442B2 (en) * 2002-02-13 2005-04-05 Applied Materials, Inc. Method of calibrating and using a semiconductor processing system

Also Published As

Publication number Publication date
DE60327621D1 (de) 2009-06-25
WO2003083166A1 (en) 2003-10-09
US20030185977A1 (en) 2003-10-02
EP1497479A4 (de) 2006-10-18
EP1497479B1 (de) 2009-05-13
US7208195B2 (en) 2007-04-24
CA2518421A1 (en) 2003-10-09
EP1497479A1 (de) 2005-01-19
US20070134427A1 (en) 2007-06-14
AU2003226086A1 (en) 2003-10-13

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