ATE429014T1 - Strombegrenztes latch - Google Patents

Strombegrenztes latch

Info

Publication number
ATE429014T1
ATE429014T1 AT03812793T AT03812793T ATE429014T1 AT E429014 T1 ATE429014 T1 AT E429014T1 AT 03812793 T AT03812793 T AT 03812793T AT 03812793 T AT03812793 T AT 03812793T AT E429014 T1 ATE429014 T1 AT E429014T1
Authority
AT
Austria
Prior art keywords
latch
current
data changes
circuit
supplies
Prior art date
Application number
AT03812793T
Other languages
English (en)
Inventor
Chi-Ming Wang
Kuo-Lung Chen
Shouchang Tsao
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE429014T1 publication Critical patent/ATE429014T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Semiconductor Memories (AREA)
  • Amplifiers (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
AT03812793T 2002-12-06 2003-12-01 Strombegrenztes latch ATE429014T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/313,738 US7339822B2 (en) 2002-12-06 2002-12-06 Current-limited latch
PCT/US2003/038328 WO2004053883A2 (en) 2002-12-06 2003-12-01 Current-limited latch

Publications (1)

Publication Number Publication Date
ATE429014T1 true ATE429014T1 (de) 2009-05-15

Family

ID=32468331

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03812793T ATE429014T1 (de) 2002-12-06 2003-12-01 Strombegrenztes latch

Country Status (10)

Country Link
US (2) US7339822B2 (de)
EP (1) EP1586096B1 (de)
JP (1) JP4603892B2 (de)
KR (1) KR101030680B1 (de)
CN (1) CN100552808C (de)
AT (1) ATE429014T1 (de)
AU (1) AU2003297625A1 (de)
DE (1) DE60327257D1 (de)
TW (1) TWI320573B (de)
WO (1) WO2004053883A2 (de)

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FR3017746B1 (fr) 2014-02-18 2016-05-27 Stmicroelectronics Rousset Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne
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CN107727923A (zh) * 2017-08-29 2018-02-23 宁德时代新能源科技股份有限公司 高压采样电路和电池管理系统
US11386961B2 (en) * 2019-12-20 2022-07-12 Sandisk Technologies Llc Centralized fixed rate serializer and deserializer for bad column management in non-volatile memory
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Also Published As

Publication number Publication date
AU2003297625A8 (en) 2004-06-30
EP1586096B1 (de) 2009-04-15
TW200421350A (en) 2004-10-16
KR20050098836A (ko) 2005-10-12
EP1586096A2 (de) 2005-10-19
TWI320573B (en) 2010-02-11
AU2003297625A1 (en) 2004-06-30
JP2006509327A (ja) 2006-03-16
US7319630B2 (en) 2008-01-15
CN1720585A (zh) 2006-01-11
WO2004053883A3 (en) 2005-03-17
JP4603892B2 (ja) 2010-12-22
DE60327257D1 (de) 2009-05-28
US20050101236A1 (en) 2005-05-12
WO2004053883A2 (en) 2004-06-24
KR101030680B1 (ko) 2011-04-22
US7339822B2 (en) 2008-03-04
US20040109354A1 (en) 2004-06-10
CN100552808C (zh) 2009-10-21

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