JP4497874B2 - 半導体集積回路及びicカード - Google Patents
半導体集積回路及びicカード Download PDFInfo
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- JP4497874B2 JP4497874B2 JP2003323923A JP2003323923A JP4497874B2 JP 4497874 B2 JP4497874 B2 JP 4497874B2 JP 2003323923 A JP2003323923 A JP 2003323923A JP 2003323923 A JP2003323923 A JP 2003323923A JP 4497874 B2 JP4497874 B2 JP 4497874B2
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- Prior art keywords
- integrated circuit
- semiconductor integrated
- photodetector
- mos transistor
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
- G06K19/07309—Means for preventing undesired reading or writing from or onto record carriers
- G06K19/07372—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
111、112、113、114 スタティックラッチを構成するMOSトランジスタ
120 スタティックラッチ
302 ドレイン拡散領域
303 ソース拡散領域
311 ドレイン端子
312 ゲート端子
313 ソース端子
314 接地端子
320 光子
400 SRAMブロック
401 メモリセルアレイ
402 冗長セルアレイ
403 冗長プログラム回路
407 ECC回路
511、512 ダイオード
611、612 電流リミッタMOSトランジスタ
700、700A、700B、700C インバータ型光ディテクタ
711 感度調整MOSトランジスタ
712 光検出MOSトランジスタ
800、800A、800B、800C、800D、800E バイアストインバータ型光ディテクタ
813、821 感度制御MOSトランジスタ
817 光検出MOSトランジスタ感度制御MOSトランジスタ
813a,813b,813c 感度制御MOSトランジスタ
900、900A、900B、900C、900D カレントミラー型光ディテクタ
916 感度調整MOSトランジスタ
919 光検出MOSトランジスタ
1000、1000A、1000B、1000C ディファレンシャルAMP型光ディテクタ
1016 感度調整MOSトランジスタ
1019 光検出MOSトランジスタ
1100 ICカードマイコン
1111 電源ブロック
1112 PLLブロック
1113 CPUを含む論理回路ブロック
1114 インタフェースブロック
1115 SRAM
1116 ROM
1117 EEPROM
1130 ICカード
1131,1135 カード基板
1132 外部端子
1136 アンテナ
1201 電圧検出回路
1202 周波数検出回路
1203 配線切断検出回路
1204 アクティブシールド配線
1301 光検出素子
1302 ワイヤード・オア結合素子
1303 リセット回路
1304 リセット信号
1305 プルダウン抵抗
1306 プルアップ抵抗
1307 配線
1308、1309 ワイヤード・オア結合素子
1501 基本セル
1502 D型フリップフロップ
1812、2011、2110、2310、2410、2610、2610_1〜2610_3、2710、2910 ダイオード
Claims (18)
- 初期状態でスタティックラッチに第1状態を保持し、第1状態のスタティックラッチを構成する非導通状態の光検出用半導体素子に光が照射されて第2状態に反転する光ディテクタをメモリセルアレイに有し、前記光ディテクタによる光検出を内部動作の停止に利用する半導体集積回路であって、
前記光検出用半導体素子は、スタティックラッチを構成するMOSトランジスタと、前記MOSトランジスタに並列に逆バイアス接続されるダイオード素子である、半導体集積回路。 - 前記メモリセルアレイにスタティック型メモリセルがマトリクス配置されたSRAMモジュールを有し、前記SRAMモジュールのメモリセルアレイに、一部のスタティック型メモリセルに代えて前記光ディテクタを配置したことを特徴とする請求項1記載の半導体集積回路。
- 前記光ディテクタに代替された前記スタティック型メモリセルの欠損を補うことが可能な冗長構成を有することを特徴とする請求項2記載の半導体集積回路。
- 前記光ディテクタに代替された前記スタティック型メモリセルの欠損によって生ずるデータエラーの検出及び訂正が可能なECC回路を有することを特徴とする請求項2記載の半導体集積回路。
- 前記メモリセルアレイに書き換え不可能な不揮発性メモリセルがマトリクス配置されたマスクROMを有し、前記マスクROMのメモリセルアレイに、一部の不揮発性メモリセルに代えて前記光ディテクタが配置されたことを特徴とする請求項1記載の半導体集積回路。
- 前記メモリセルアレイに電気的に書換え可能な不揮発性メモリセルがマトリクス配置されたフラッシュメモリを有し、前記フラッシュメモリのメモリセルアレイに、一部の不揮発性メモリセルに代えて前記光ディテクタが配置されたことを特徴とする請求項1記載の半導体集積回路。
- 前記光検出用半導体素子におけるpn接合部のうち、逆バイアス状態にされるpn接合部の面積が他の接合部の面積よりも大きくされ、光に対する感度が同種の他の半導体素子よりも高いことを特徴とする請求項1乃至6の何れか1項記載の半導体集積回路。
- 前記光ディテクタの光検出用半導体素子以外の半導体素子の上層部を遮光する金属膜又はポリシリコン膜を有することを特徴とする請求項1乃至7の何れか1項記載の半導体集積回路。
- 初期状態でスタティックラッチに第1状態を保持し、第1状態のスタティックラッチを構成する非導通状態の光検出用半導体素子に光が照射されて第2状態に反転する光ディテクタをメモリセルアレイに有し、前記光ディテクタによる光検出を内部動作の停止に利用する半導体集積回路であって、
前記光検出用半導体素子に逆方向接続のダイオードが並列接続される、半導体集積回路。 - 前記メモリセルアレイにスタティック型メモリセルがマトリクス配置されたSRAMモジュールを有し、前記SRAMモジュールのメモリセルアレイに、一部のスタティック型メモリセルに代えて前記光ディテクタを配置したことを特徴とする請求項9記載の半導体集積回路。
- 前記光ディテクタに代替された前記スタティック型メモリセルの欠損を補うことが可能な冗長構成を有することを特徴とする請求項10記載の半導体集積回路。
- 前記光ディテクタに代替された前記スタティック型メモリセルの欠損によって生ずるデータエラーの検出及び訂正が可能なECC回路を有することを特徴とする請求項10記載の半導体集積回路。
- 夫々の光ディテクタによる光検出によって得られる光検出信号の論理和信号を内部を初期化して動作を停止させるリセット信号とすることが可能なリセット回路を有することを特徴とする請求項1乃至12の何れか1項記載の半導体集積回路。
- 前記光検出信号の論理和信号の伝達径路にアクティブシールド配線が接続されることを特徴とする請求項13記載の半導体集積回路。
- 動作電圧の不所望な低下に応答して変化する電圧検出信号を出力する電圧検出回路と、前記電圧検出信号と前記夫々の光ディテクタによる光検出によって得られる光検出信号との論理和信号をリセット信号とすることが可能なリセット回路とを更に有することを特徴とする請求項1乃至12の何れか1項記載の半導体集積回路。
- 内部クロック信号周波数の不所望な変化に応答して変化する周波数検出信号を出力する周波数検出回路と、前記周波数検出信号と前記夫々の光ディテクタによる光検出によって得られる光検出信号との論理和信号をリセット信号とすることが可能なリセット回路とを更に有することを特徴とする請求項1乃至12の何れか1項記載の半導体集積回路。
- 所定の内部配線の切断に応答して変化する配線切断検出信号を出力する配線切断検出回路と、前記配線切断検出信号と前記夫々の光ディテクタによる光検出信号との論理和信号をリセット信号とすることが可能なリセット回路とを更に有することを特徴とする請求項1乃至12の何れか1項記載の半導体集積回路。
- 前記光ディテクタを複数分散配置したことを特徴とする請求項2乃至6の何れか1項、又は請求項10乃至12の何れか1項記載の半導体集積回路。
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003323923A JP4497874B2 (ja) | 2002-12-13 | 2003-09-17 | 半導体集積回路及びicカード |
TW092134024A TW200419720A (en) | 2002-12-13 | 2003-12-03 | Semiconductor integrated circuit and IC card |
TW099145882A TWI475644B (zh) | 2002-12-13 | 2003-12-03 | Semiconductor integrated circuit and IC card |
US10/725,477 US7042752B2 (en) | 2002-12-13 | 2003-12-03 | IC card system using photo-detectors for protection |
DE60319051T DE60319051T2 (de) | 2002-12-13 | 2003-12-09 | Methode zur Verhinderung von Manipulation an einem Schaltkreis |
EP03257713A EP1429227B1 (en) | 2002-12-13 | 2003-12-09 | Method for preventing tampering of a semiconductor integrated circuit |
KR1020030090210A KR20040053803A (ko) | 2002-12-13 | 2003-12-11 | 반도체집적회로 및 ic카드 |
US11/378,251 US20070189051A1 (en) | 2002-12-13 | 2006-03-20 | Semiconductor integrated circuit and IC card system |
US11/378,276 US7295455B2 (en) | 2002-12-13 | 2006-03-20 | Semiconductor integrated circuit with photo-detecting elements for reverse-engineering protection |
US11/867,917 US7535744B2 (en) | 2002-12-13 | 2007-10-05 | Semiconductor integrated circuit and IC card system having internal information protection |
US12/422,802 US20090224143A1 (en) | 2002-12-13 | 2009-04-13 | Semiconductor integrated circuit and ic card system |
US13/051,556 US8488360B2 (en) | 2002-12-13 | 2011-03-18 | Semiconductor integrated circuit including a logic circuit module with a plurality of photodetectors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002362672 | 2002-12-13 | ||
JP2003323923A JP4497874B2 (ja) | 2002-12-13 | 2003-09-17 | 半導体集積回路及びicカード |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010074151A Division JP5187860B2 (ja) | 2002-12-13 | 2010-03-29 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004206680A JP2004206680A (ja) | 2004-07-22 |
JP4497874B2 true JP4497874B2 (ja) | 2010-07-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003323923A Expired - Fee Related JP4497874B2 (ja) | 2002-12-13 | 2003-09-17 | 半導体集積回路及びicカード |
Country Status (6)
Country | Link |
---|---|
US (6) | US7042752B2 (ja) |
EP (1) | EP1429227B1 (ja) |
JP (1) | JP4497874B2 (ja) |
KR (1) | KR20040053803A (ja) |
DE (1) | DE60319051T2 (ja) |
TW (2) | TW200419720A (ja) |
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- 2003-12-03 US US10/725,477 patent/US7042752B2/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
KR20040053803A (ko) | 2004-06-24 |
US8488360B2 (en) | 2013-07-16 |
US20090224143A1 (en) | 2009-09-10 |
TWI475644B (zh) | 2015-03-01 |
EP1429227A2 (en) | 2004-06-16 |
US7042752B2 (en) | 2006-05-09 |
JP2004206680A (ja) | 2004-07-22 |
US20040120195A1 (en) | 2004-06-24 |
US7535744B2 (en) | 2009-05-19 |
DE60319051T2 (de) | 2009-02-05 |
EP1429227B1 (en) | 2008-02-13 |
US20080031031A1 (en) | 2008-02-07 |
DE60319051D1 (de) | 2008-03-27 |
TWI341569B (ja) | 2011-05-01 |
US7295455B2 (en) | 2007-11-13 |
TW200419720A (en) | 2004-10-01 |
TW201123354A (en) | 2011-07-01 |
US20070189051A1 (en) | 2007-08-16 |
EP1429227A3 (en) | 2006-01-25 |
US20070189055A1 (en) | 2007-08-16 |
US20110168875A1 (en) | 2011-07-14 |
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