ATE41077T1 - Mos-schaltung mit bestimmtem verhaeltnis geschwindigkeit/leistung. - Google Patents

Mos-schaltung mit bestimmtem verhaeltnis geschwindigkeit/leistung.

Info

Publication number
ATE41077T1
ATE41077T1 AT82111416T AT82111416T ATE41077T1 AT E41077 T1 ATE41077 T1 AT E41077T1 AT 82111416 T AT82111416 T AT 82111416T AT 82111416 T AT82111416 T AT 82111416T AT E41077 T1 ATE41077 T1 AT E41077T1
Authority
AT
Austria
Prior art keywords
channel
transistor
implant
section
power consumption
Prior art date
Application number
AT82111416T
Other languages
English (en)
Inventor
Douglas Parks Sheppard
Original Assignee
Thomson Components Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Components Mostek Corp filed Critical Thomson Components Mostek Corp
Application granted granted Critical
Publication of ATE41077T1 publication Critical patent/ATE41077T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
AT82111416T 1981-12-28 1982-12-09 Mos-schaltung mit bestimmtem verhaeltnis geschwindigkeit/leistung. ATE41077T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33490081A 1981-12-28 1981-12-28
EP82111416A EP0082999B1 (de) 1981-12-28 1982-12-09 MOS-Schaltung mit bestimmtem Verhältnis Geschwindigkeit/Leistung

Publications (1)

Publication Number Publication Date
ATE41077T1 true ATE41077T1 (de) 1989-03-15

Family

ID=23309356

Family Applications (1)

Application Number Title Priority Date Filing Date
AT82111416T ATE41077T1 (de) 1981-12-28 1982-12-09 Mos-schaltung mit bestimmtem verhaeltnis geschwindigkeit/leistung.

Country Status (5)

Country Link
EP (1) EP0082999B1 (de)
JP (2) JPH0638488B2 (de)
AT (1) ATE41077T1 (de)
CA (1) CA1211230A (de)
DE (1) DE3279496D1 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629391B2 (de) * 1973-05-23 1981-07-08
JPS5198938A (de) * 1975-02-26 1976-08-31
US3995172A (en) * 1975-06-05 1976-11-30 International Business Machines Corporation Enhancement-and depletion-type field effect transistors connected in parallel
JPS6043693B2 (ja) * 1975-09-23 1985-09-30 株式会社東芝 駆動回路
JPS53130987A (en) * 1977-04-20 1978-11-15 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPH0638488B2 (ja) 1994-05-18
EP0082999B1 (de) 1989-03-01
EP0082999A2 (de) 1983-07-06
EP0082999A3 (en) 1985-04-17
CA1211230A (en) 1986-09-09
JPH0689987A (ja) 1994-03-29
DE3279496D1 (en) 1989-04-06
JPS58147073A (ja) 1983-09-01

Similar Documents

Publication Publication Date Title
EP0471131A1 (de) Verfahren zur Herstellung einer N-Kanal-EPROM-Zelle mit einer einzigen Polysiliziumschicht und durch dieses Verfahren hergestellte Zelle
KR950015828A (ko) 이중 주입 후방 확산된 금속산화물 반도체 장치 및 그 형성 방법
DE60232635D1 (de) Integrierter Schaltkreis mit enggekoppeltem Hochspannungsausgang und "Offline" Transistorpaar
KR0174335B1 (ko) 기판의 감도를 감소시키기 위해 이온 주입에 의해 카운터도핑을 한 mos 채널 소자
DE3477097D1 (en) Method of producing a highly integrated circuit of mos field-effect transistors
JPS5710266A (en) Mis field effect semiconductor device
JPS6336573A (ja) 処理選択可能温度係数を持った電流源
ATE41077T1 (de) Mos-schaltung mit bestimmtem verhaeltnis geschwindigkeit/leistung.
EP0414400A3 (de) MOSFET-Verarmungsanordnung
JPS5550743A (en) Level shift circuit
JPS54101680A (en) Semiconductor device
KR960012567A (ko) Mos형 반도체장치의 제조방법 및 mos형 반도체장치
KR950021721A (ko) 모스 전계 효과 트랜지스터(mosfet)를 구비한 반도체 장치 및 그 제조 방법
JPS5534443A (en) Preparation of semiconductor memory storage
JPS54161893A (en) Semiconductor device
JPS54151380A (en) Mos transistor
JPS5567160A (en) Semiconductor memory storage
JPS6418262A (en) Depletion mode metal-oxide semiconductor device
JPS56126970A (en) Mos field effect transistor and manufacture thereof
JPS6464364A (en) Semiconductor device and its manufacture
JPS57192083A (en) Semiconductor device
KR930005272A (ko) Ldd형 mos 트랜지스터 및 그의 제조방법
Singh Self-Aligned Molybdenum Gate MOS-FETs
JPS5666072A (en) Semicondcutor device
JPS54147786A (en) Transistor