JPS54139383A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS54139383A
JPS54139383A JP4725878A JP4725878A JPS54139383A JP S54139383 A JPS54139383 A JP S54139383A JP 4725878 A JP4725878 A JP 4725878A JP 4725878 A JP4725878 A JP 4725878A JP S54139383 A JPS54139383 A JP S54139383A
Authority
JP
Japan
Prior art keywords
type
film
region
gate
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4725878A
Other languages
Japanese (ja)
Inventor
Noboru Sato
Yukinori Kuroki
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4725878A priority Critical patent/JPS54139383A/en
Publication of JPS54139383A publication Critical patent/JPS54139383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Abstract

PURPOSE:To improve the number of information rewrite times by providing a threshold voltage difference between an IGFET and an IGFET-type non-voltatile memory different in gate insulating film thickness. CONSTITUTION:There is gate film thick inclination part 12 between FET 11 having gate oxide thick film 16 and thin film FET-type non-volatile memory 13. Nitride film 17 and Al electrode 18 are formed on the gate oxide film. W 19 is inserted into the interface between film 16 and 17 in atoms. N<+>-type source and drain are diffused to p<->-type Si substrate 20, and ions are injected to the substrate surface of region 11 to form p-type layer 21, and then, only this region becomes an enhancement-type transistor, and depletion-type transistors are constituted in almost all ther regions. Thus, regions 11, 12 and 13 are so constituted that region 11 may be always turned on and inclination part 12 and region 13 may be always turned on or have the threshold voltage between all-the-time turning-off and all-the-time turning- on, so that the number of information rewrite times can be improved.
JP4725878A 1978-04-20 1978-04-20 Non-volatile semiconductor memory device Pending JPS54139383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4725878A JPS54139383A (en) 1978-04-20 1978-04-20 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4725878A JPS54139383A (en) 1978-04-20 1978-04-20 Non-volatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS54139383A true JPS54139383A (en) 1979-10-29

Family

ID=12770246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4725878A Pending JPS54139383A (en) 1978-04-20 1978-04-20 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS54139383A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222875A (en) * 2001-01-25 2002-08-09 Sony Corp Non-volatile semiconductor memory device and method of manufacturing the same
JP2010264558A (en) * 2009-05-15 2010-11-25 Kunitsugu Yanagisawa Cutting device of sheet material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50779A (en) * 1972-11-13 1975-01-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50779A (en) * 1972-11-13 1975-01-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222875A (en) * 2001-01-25 2002-08-09 Sony Corp Non-volatile semiconductor memory device and method of manufacturing the same
JP2010264558A (en) * 2009-05-15 2010-11-25 Kunitsugu Yanagisawa Cutting device of sheet material

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