KR850005162A - Field effect transistor - Google Patents

Field effect transistor Download PDF

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Publication number
KR850005162A
KR850005162A KR1019840008250A KR840008250A KR850005162A KR 850005162 A KR850005162 A KR 850005162A KR 1019840008250 A KR1019840008250 A KR 1019840008250A KR 840008250 A KR840008250 A KR 840008250A KR 850005162 A KR850005162 A KR 850005162A
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South Korea
Prior art keywords
field effect
effect transistor
polycrystalline silicon
thin film
silicon thin
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KR1019840008250A
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Korean (ko)
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KR920005537B1 (en
Inventor
히사오 하야시
Original Assignee
오오가 노리오
쏘니 가부시기가이샤
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Publication of KR850005162A publication Critical patent/KR850005162A/en
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Publication of KR920005537B1 publication Critical patent/KR920005537B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음No content

Description

전계효과형 트랜지스터Field effect transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 활성층을 다결정 실리콘 박막에 의해서 구성한 종래의 MOS TFT의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a conventional MOS TFT in which an active layer is formed of a polycrystalline silicon thin film.

제2도는 본원 발명에 관한 전계효과형 트랜지스터의 일실시예로서의 MOS TET의 구조를 나타낸 단면도.2 is a cross-sectional view showing the structure of a MOS TET as one embodiment of the field effect transistor according to the present invention.

제3도는 제2도에 나타낸 MOS에 있어서 활성층을 구성하는 다결정 실리콘 박막의 막두께와 신효 이동도 μeff의 관계를 나타낸 그래프.FIG. 3 is a graph showing the relationship between the film thickness of the polycrystalline silicon thin film constituting the active layer and the effective mobility μeff in the MOS shown in FIG.

※ 도면의 주요한 부분에 대한 부호의 설명※ Explanation of code about main part of drawing

(1):석영기판, (2):다결정 실리콘 박막, (2c):활성층, (3):소오스영역, (4):드레인영역, (5):게이트절연층, (6):게이트전극, (8),(9):인출전극(1): quartz substrate, (2): polycrystalline silicon thin film, (2c): active layer, (3): source region, (4): drain region, (5): gate insulating layer, (6): gate electrode, (8), (9): lead-out electrode

Claims (1)

채널이 형성되는 활성층을 다결정 실리콘 박막에 의해서 구성한 전계효과형 트랜지스터에 있어서, 상기 다결정 실리콘 박막의 막두께를 100∼750Å로 구성한 것을 특징으로 하는 전계효과형 트랜지스터.A field effect transistor comprising an active layer in which a channel is formed of a polycrystalline silicon thin film, wherein the film thickness of the polycrystalline silicon thin film is 100 to 750 Å. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840008250A 1983-12-23 1984-12-22 Field effect transistor KR920005537B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP??83-251813 1983-12-23
JP58251813A JPH0669094B2 (en) 1983-12-23 1983-12-23 Field effect transistor
JP58-251813 1983-12-23

Publications (2)

Publication Number Publication Date
KR850005162A true KR850005162A (en) 1985-08-21
KR920005537B1 KR920005537B1 (en) 1992-07-06

Family

ID=17228297

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840008250A KR920005537B1 (en) 1983-12-23 1984-12-22 Field effect transistor

Country Status (2)

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JP (1) JPH0669094B2 (en)
KR (1) KR920005537B1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63262875A (en) * 1987-04-20 1988-10-31 Nec Corp Manufacture of thin-film transistor
JP2510710B2 (en) * 1988-12-13 1996-06-26 三菱電機株式会社 MOS field effect transistor formed in semiconductor layer on insulator substrate
JP2629995B2 (en) * 1989-12-29 1997-07-16 日本電気株式会社 Thin film transistor
JP3173854B2 (en) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 Method for manufacturing thin-film insulated gate semiconductor device and semiconductor device manufactured
JP3173926B2 (en) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 Method of manufacturing thin-film insulated gate semiconductor device and semiconductor device thereof
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
JP3292657B2 (en) * 1995-04-10 2002-06-17 キヤノン株式会社 Thin film transistor and method for manufacturing liquid crystal display device using the same
EP2261960B1 (en) 2008-04-02 2018-10-10 NLT Technologies, Ltd. Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182272A (en) * 1982-04-19 1983-10-25 Seiko Epson Corp Thin film transistor

Also Published As

Publication number Publication date
KR920005537B1 (en) 1992-07-06
JPH0669094B2 (en) 1994-08-31
JPS60136262A (en) 1985-07-19

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