KR950004600A - Polycrystalline silicon thin film transistor - Google Patents
Polycrystalline silicon thin film transistor Download PDFInfo
- Publication number
- KR950004600A KR950004600A KR1019930014706A KR930014706A KR950004600A KR 950004600 A KR950004600 A KR 950004600A KR 1019930014706 A KR1019930014706 A KR 1019930014706A KR 930014706 A KR930014706 A KR 930014706A KR 950004600 A KR950004600 A KR 950004600A
- Authority
- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- thin film
- film transistor
- silicon thin
- channel
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract 4
- 238000010292 electrical insulation Methods 0.000 claims abstract 2
- 239000012535 impurity Substances 0.000 claims abstract 2
- 239000011521 glass Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
본 발명은 다결정 실리콘 박막 트랜지스터에 관한 것으로, 특히 오프-셋 구조의 다결정 실리콘 박막 트랜지스터에 관해 기술한다.The present invention relates to a polycrystalline silicon thin film transistor, and more particularly, to a polycrystalline silicon thin film transistor of an off-set structure.
본 발명 박막 트랜지스터는 석영기판과, 상기 기판에 형성되며 상기 다결정 실리콘의 채널의 양측에 불순물이 도핑된 소오스와 게이트이 마련된 활성층과, 상기 활성층과 전기적인 절연을 유지하며 상기 채널의 상부에 위치되는 게이트를 갖추며, 상기 드레인에 인접된 상기 채널의 상방에 다결정 실리콘 마스크층이 마련되어 있는 구조적 특징을 갖는다. 이로써 오프-커런트의 감소가 이루어 지고 결과적으로 LCD의 콘트라스트 비와 휘도를 향상시킨다.The thin film transistor of the present invention includes a quartz substrate, an active layer formed on the substrate and having an impurity doped source and a gate on both sides of a channel of the polycrystalline silicon, and a gate positioned on an upper portion of the channel while maintaining electrical insulation with the active layer. And a polycrystalline silicon mask layer provided above the channel adjacent to the drain. This reduces off-current and consequently improves the contrast ratio and brightness of the LCD.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 종래 다결정 실리콘 박막 트랜지스터의 개략적 단면도. 제 2 도는 제 1 도에 도시된 종래 다결정 실리콘 박막 트랜지스터의 개략의 배치도. 제 3 도는 본 발명에 따른 다결정 실리콘 박막 트랜지스터의 개략적 단면도. 제 4 도는 제 2 도에 도시된 본 발명 다결정 실리콘 박막 트랜지스터의 개략적 평면 배치도.1 is a schematic cross-sectional view of a conventional polycrystalline silicon thin film transistor. 2 is a schematic layout view of a conventional polycrystalline silicon thin film transistor shown in FIG. 3 is a schematic cross-sectional view of a polycrystalline silicon thin film transistor according to the present invention. 4 is a schematic plan layout of the present invention polycrystalline silicon thin film transistor shown in FIG.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930014706A KR100297706B1 (en) | 1993-07-30 | 1993-07-30 | Polycrystalline thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930014706A KR100297706B1 (en) | 1993-07-30 | 1993-07-30 | Polycrystalline thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950004600A true KR950004600A (en) | 1995-02-18 |
| KR100297706B1 KR100297706B1 (en) | 2001-10-24 |
Family
ID=37528211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930014706A KR100297706B1 (en) | 1993-07-30 | 1993-07-30 | Polycrystalline thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100297706B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8018545B2 (en) | 2004-08-26 | 2011-09-13 | Lg Display Co., Ltd. | Method of fabricating a liquid crystal display device |
| US8049830B2 (en) | 2004-09-09 | 2011-11-01 | Lg Display Co., Ltd. | Liquid crystal display device and fabrication method thereof |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101043992B1 (en) | 2004-08-12 | 2011-06-24 | 엘지디스플레이 주식회사 | Liquid crystal display device and method of fabricating thereof |
| KR101037322B1 (en) | 2004-08-13 | 2011-05-27 | 엘지디스플레이 주식회사 | Liquid crystal display device and method of fabricating thereof |
| KR101078360B1 (en) | 2004-11-12 | 2011-10-31 | 엘지디스플레이 주식회사 | Liquid Crystal Display Panel of Poly-type and Method of Fabricating The Same |
| KR101066489B1 (en) | 2004-11-12 | 2011-09-21 | 엘지디스플레이 주식회사 | Thin Film Transistor Substrate of Poly-type and Method of Fabricating The Same |
| KR101192746B1 (en) | 2004-11-12 | 2012-10-18 | 엘지디스플레이 주식회사 | Method of Fabricating Thin Film Transistor Substrate of Poly-type |
| KR101153297B1 (en) | 2004-12-22 | 2012-06-07 | 엘지디스플레이 주식회사 | Liquid crystal display device and method of fabricating the same |
| KR101086487B1 (en) | 2004-12-24 | 2011-11-25 | 엘지디스플레이 주식회사 | Poly Thin Film Transistor Substrate and Method of Fabricating The Same |
| KR101107252B1 (en) | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | Thin film transistor substrate in electro-luminescence dispaly panel and method of fabricating the same |
| KR101107251B1 (en) | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | Poly Thin Film Transistor Substrate and Method of Fabricating The Same |
| KR101125252B1 (en) | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | Poly Liquid Crystal Dispaly Panel and Method of Fabricating The Same |
-
1993
- 1993-07-30 KR KR1019930014706A patent/KR100297706B1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8018545B2 (en) | 2004-08-26 | 2011-09-13 | Lg Display Co., Ltd. | Method of fabricating a liquid crystal display device |
| US8049830B2 (en) | 2004-09-09 | 2011-11-01 | Lg Display Co., Ltd. | Liquid crystal display device and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100297706B1 (en) | 2001-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20130430 Year of fee payment: 13 |
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| EXPY | Expiration of term |