KR970016683A - Thin film transistor substrate for liquid crystal display device and manufacturing method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate for a liquid crystal display device and a method of manufacturing the same, by forming a data line in a double layer using aluminum and a source / drain metal.

A gate wiring formed on the substrate, an insulating film covering the entire surface including the gate wiring, a semiconductor film being a channel layer formed on the insulating film, a source electrode and a drain electrode formed on the semiconductor film, and perpendicular to the gate line And a pixel electrode connected to the drain electrode, wherein the data line is formed of a double layer consisting of a first conductive layer and a second conductive layer, The part corresponding to the layer is formed only with the second conductive layer.

Description

Thin film transistor substrate for liquid crystal display device and manufacturing method thereof

Since this is an open matter, no full text was included.

3 is a plan view illustrating a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention.

4 is a cross-sectional view taken along line AA ′ of FIG. 3.

5A to 5B are cross-sectional views illustrating a process sequence of a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention.

Claims (7)

A substrate made of a transparent insulating material, a gate wiring formed on the substrate, a gate wiring including a gate line, an insulating film covering the entire surface including the gate wiring, and formed on a position corresponding to the gate electrode on the insulating film A semiconductor layer which is a channel layer, a source electrode and a drain electrode formed at an adjacent position corresponding to the gate electrode on the semiconductor layer, and connected to the drain electrode and formed to cross the gate line perpendicularly; And a pixel electrode connected to the drain electrode, wherein the data line is formed of a double layer including a first conductive layer and a second conductive layer, and a second conductive layer is formed at a portion corresponding to the semiconductor layer. It is formed by layers only TFT array panel for a liquid crystal display device. The thin film transistor substrate of claim 1, wherein the first conductive layer is formed of aluminum, and the second conductive layer is formed of a metal capable of forming silicide. The thin film transistor substrate of claim 1, wherein the second conductive layer is made of chromium. The thin film transistor substrate of claim 1, wherein the second conductive layer is wider than the width of the first conductive layer. A first step of forming a gate wiring including a gate electrode and a gate line as a conductive material on a substrate made of a transparent insulating material, a second step of forming an insulating film on the gate wiring, and a position corresponding to the gate electrode on the insulating film A third step of forming a semiconductor layer as a channel layer on the gate wiring to include a fourth step of forming a lower end of the data line using a conductive material perpendicularly intersecting the gate line, an adjacent position corresponding to the gate electrode, and And a fifth step of forming a source / drain electrode and an upper end of the data line with a conductive material to cover the lower end of the data line, and a sixth step of forming a passivation layer on the entire area to cover the data line. Method of manufacturing a thin film transistor substrate. 6. The method of claim 5, further comprising: anodizing the gate electrode between the first process and the second process to form an anodized film. 7. The method of manufacturing a thin film transistor substrate for a liquid crystal display device according to claim 5 or 6, further comprising a step of forming an exogenous semiconductor film on the semiconductor film between the third process and the fourth process. ※ Note: The disclosure is based on the initial application.