ATE407457T1 - Ambipolare, lichtemittierende feldeffekttransistoren - Google Patents
Ambipolare, lichtemittierende feldeffekttransistorenInfo
- Publication number
- ATE407457T1 ATE407457T1 AT05701898T AT05701898T ATE407457T1 AT E407457 T1 ATE407457 T1 AT E407457T1 AT 05701898 T AT05701898 T AT 05701898T AT 05701898 T AT05701898 T AT 05701898T AT E407457 T1 ATE407457 T1 AT E407457T1
- Authority
- AT
- Austria
- Prior art keywords
- light emitting
- field effect
- effect transistors
- emitting field
- injecting electrode
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Amplifiers (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0400997.3A GB0400997D0 (en) | 2004-01-16 | 2004-01-16 | N-channel transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE407457T1 true ATE407457T1 (de) | 2008-09-15 |
Family
ID=31726316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05701898T ATE407457T1 (de) | 2004-01-16 | 2005-01-17 | Ambipolare, lichtemittierende feldeffekttransistoren |
Country Status (10)
Country | Link |
---|---|
US (3) | US20070278478A1 (de) |
EP (3) | EP1704587B1 (de) |
JP (3) | JP5552205B2 (de) |
KR (1) | KR101142991B1 (de) |
CN (3) | CN1918724B (de) |
AT (1) | ATE407457T1 (de) |
DE (1) | DE602005009495D1 (de) |
GB (1) | GB0400997D0 (de) |
SG (1) | SG149855A1 (de) |
WO (2) | WO2005069401A1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0400997D0 (en) * | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
JP4575725B2 (ja) * | 2004-08-20 | 2010-11-04 | 株式会社リコー | 電子素子、及びその製造方法 |
WO2006116584A2 (en) * | 2005-04-27 | 2006-11-02 | Dynamic Organic Light, Inc. | Light emitting polymer devices using self-assembled monolayer structures |
DE102005048774B4 (de) * | 2005-10-07 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung |
DE602005013312D1 (de) * | 2005-11-25 | 2009-04-23 | Sca Hygiene Prod Gmbh | Mit lotion versehenes tissuepapier mit kurzer wasseraufnahmezeit |
US7528017B2 (en) * | 2005-12-07 | 2009-05-05 | Kovio, Inc. | Method of manufacturing complementary diodes |
JP2007200829A (ja) * | 2005-12-27 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 有機発光トランジスタ |
US7528448B2 (en) * | 2006-07-17 | 2009-05-05 | E.I. Du Pont De Nemours And Company | Thin film transistor comprising novel conductor and dielectric compositions |
US7687870B2 (en) | 2006-12-29 | 2010-03-30 | Panasonic Corporation | Laterally configured electrooptical devices |
JP5152493B2 (ja) * | 2007-03-26 | 2013-02-27 | 国立大学法人大阪大学 | 有機電界効果トランジスター及びその製造方法 |
JP5111949B2 (ja) * | 2007-06-18 | 2013-01-09 | 株式会社日立製作所 | 薄膜トランジスタの製造方法及び薄膜トランジスタ装置 |
KR20090065254A (ko) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터 |
GB2458483B (en) * | 2008-03-19 | 2012-06-20 | Cambridge Display Tech Ltd | Organic thin film transistor |
KR101561322B1 (ko) * | 2008-07-02 | 2015-10-16 | 바스프 에스이 | 교대 도너 억셉터 공중합체를 주성분으로 하는 고성능 용액 가공성 반도체 중합체 |
GB0821980D0 (en) * | 2008-12-02 | 2009-01-07 | Cambridge Entpr Ltd | Optoelectronic device |
US8686404B2 (en) | 2008-12-08 | 2014-04-01 | The Trustees Of The University Of Pennsylvania | Organic semiconductors capable of ambipolar transport |
KR20110112415A (ko) * | 2009-01-08 | 2011-10-12 | 더 보드 오브 트러스티스 오브 더 유니버시티 오브 일리노이 | 발광 및 레이저 반도체 소자들 및 방법들 |
US8669552B2 (en) | 2011-03-02 | 2014-03-11 | Applied Materials, Inc. | Offset electrode TFT structure |
BR112014010178A2 (pt) * | 2011-10-28 | 2017-06-27 | Univ Georgetown | processo e sistema para gerar uma fotorresposta de junções de schottky de mos2 |
US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
WO2015047264A1 (en) * | 2013-09-26 | 2015-04-02 | Intel Corporation | Methods of forming low band gap source and drain structures in microelectronic devices |
US9147615B2 (en) | 2014-02-14 | 2015-09-29 | International Business Machines Corporation | Ambipolar synaptic devices |
CN103972390B (zh) * | 2014-05-21 | 2017-02-15 | 北京交通大学 | 一种双极型有机发光场效应晶体管 |
EP3155623B1 (de) | 2014-06-11 | 2019-05-08 | Eastman Kodak Company | Vorrichtungen mit dielektrischen schichten mit thiosulfathaltigen polymeren |
US20170154790A1 (en) * | 2015-11-30 | 2017-06-01 | Intel Corporation | Sam assisted selective e-less plating on packaging materials |
CN107425035B (zh) * | 2017-05-11 | 2019-11-05 | 京东方科技集团股份有限公司 | 有机发光晶体管和显示面板 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19543540C1 (de) * | 1995-11-22 | 1996-11-21 | Siemens Ag | Vertikal integriertes Halbleiterbauelement mit zwei miteinander verbundenen Substraten und Herstellungsverfahren dafür |
JPH10209459A (ja) | 1997-01-27 | 1998-08-07 | Matsushita Electric Ind Co Ltd | 有機薄膜トランジスタ及びその製造方法並びに液晶素子と有機発光素子 |
GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6373186B1 (en) * | 1999-01-21 | 2002-04-16 | Tdk Corporation | Organic electroluminescent device with high resistance inorganic hole injecting layer |
CN100461486C (zh) * | 1999-06-21 | 2009-02-11 | 剑桥企业有限公司 | 用于有机薄膜晶体管的取向聚合物 |
US6720572B1 (en) * | 1999-06-25 | 2004-04-13 | The Penn State Research Foundation | Organic light emitters with improved carrier injection |
US6284562B1 (en) | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
CN100483774C (zh) * | 1999-12-21 | 2009-04-29 | 造型逻辑有限公司 | 半导体器件及其形成方法 |
CN1245769C (zh) | 1999-12-21 | 2006-03-15 | 造型逻辑有限公司 | 溶液加工 |
JP2002026334A (ja) | 2000-07-12 | 2002-01-25 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置およびエレクトロルミネッセンス表示装置 |
US6884093B2 (en) * | 2000-10-03 | 2005-04-26 | The Trustees Of Princeton University | Organic triodes with novel grid structures and method of production |
SG138467A1 (en) * | 2000-12-28 | 2008-01-28 | Semiconductor Energy Lab | Luminescent device |
JP2002343578A (ja) * | 2001-05-10 | 2002-11-29 | Nec Corp | 発光体、発光素子、および発光表示装置 |
US6870180B2 (en) * | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
EP1306909A1 (de) * | 2001-10-24 | 2003-05-02 | Interuniversitair Micro-Elektronica Centrum | Ambipolarer organischer Transistor |
EP1306910B1 (de) * | 2001-10-24 | 2011-08-17 | Imec | Ambipolarer organischer Transistor |
US6617609B2 (en) * | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
JP4269134B2 (ja) * | 2001-11-06 | 2009-05-27 | セイコーエプソン株式会社 | 有機半導体装置 |
JP2003187983A (ja) * | 2001-12-17 | 2003-07-04 | Ricoh Co Ltd | 有機elトランジスタ |
EP2204861A1 (de) | 2001-12-19 | 2010-07-07 | Merck Patent GmbH | Elektronische Geräte |
JP2003282884A (ja) * | 2002-03-26 | 2003-10-03 | Kansai Tlo Kk | サイドゲート型有機fet及び有機el |
US6970490B2 (en) * | 2002-05-10 | 2005-11-29 | The Trustees Of Princeton University | Organic light emitting devices based on the formation of an electron-hole plasma |
GB2388709A (en) | 2002-05-17 | 2003-11-19 | Seiko Epson Corp | Circuit fabrication method |
US7002176B2 (en) * | 2002-05-31 | 2006-02-21 | Ricoh Company, Ltd. | Vertical organic transistor |
GB0215375D0 (en) * | 2002-07-03 | 2002-08-14 | Univ Cambridge Tech | Organic-inorganic hybrid transistors |
KR20050028020A (ko) * | 2002-07-15 | 2005-03-21 | 파이오니아 가부시키가이샤 | 유기 반도체 소자 및 그 제조 방법 |
US7115916B2 (en) * | 2002-09-26 | 2006-10-03 | International Business Machines Corporation | System and method for molecular optical emission |
US6828583B2 (en) * | 2003-03-12 | 2004-12-07 | The Regents Of The University Of California | Injection lasers fabricated from semiconducting polymers |
GB0315477D0 (en) | 2003-07-02 | 2003-08-06 | Plastic Logic Ltd | Rectifying diodes |
GB0318817D0 (en) * | 2003-08-11 | 2003-09-10 | Univ Cambridge Tech | Method of making a polymer device |
US7078937B2 (en) * | 2003-12-17 | 2006-07-18 | 3M Innovative Properties Company | Logic circuitry powered by partially rectified ac waveform |
GB0400997D0 (en) * | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
WO2005079119A1 (ja) * | 2004-02-16 | 2005-08-25 | Japan Science And Technology Agency | 発光型トランジスタ |
JP5137296B2 (ja) * | 2004-03-19 | 2013-02-06 | 三菱化学株式会社 | 電界効果トランジスタ |
-
2004
- 2004-01-16 GB GBGB0400997.3A patent/GB0400997D0/en not_active Ceased
-
2005
- 2005-01-17 US US10/586,244 patent/US20070278478A1/en not_active Abandoned
- 2005-01-17 DE DE602005009495T patent/DE602005009495D1/de active Active
- 2005-01-17 AT AT05701898T patent/ATE407457T1/de not_active IP Right Cessation
- 2005-01-17 JP JP2006548405A patent/JP5552205B2/ja not_active Expired - Fee Related
- 2005-01-17 CN CN200580005000XA patent/CN1918724B/zh active Active
- 2005-01-17 WO PCT/GB2005/000132 patent/WO2005069401A1/en active Application Filing
- 2005-01-17 EP EP05701900.2A patent/EP1704587B1/de not_active Not-in-force
- 2005-01-17 SG SG200900370-8A patent/SG149855A1/en unknown
- 2005-01-17 KR KR1020067016478A patent/KR101142991B1/ko active IP Right Grant
- 2005-01-17 JP JP2006548404A patent/JP5216217B2/ja active Active
- 2005-01-17 EP EP05701898A patent/EP1711970B1/de active Active
- 2005-01-17 CN CN2005800050014A patent/CN1918722B/zh not_active Expired - Fee Related
- 2005-01-17 EP EP08158240A patent/EP1990845B1/de active Active
- 2005-01-17 WO PCT/GB2005/000130 patent/WO2005069400A1/en active IP Right Grant
- 2005-01-17 US US10/586,149 patent/US7638793B2/en active Active
- 2005-01-17 CN CN201010168735.7A patent/CN101847689B/zh active Active
-
2011
- 2011-09-28 JP JP2011211888A patent/JP5329630B2/ja active Active
-
2015
- 2015-02-09 US US14/616,803 patent/US20150221896A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2007518259A (ja) | 2007-07-05 |
JP5552205B2 (ja) | 2014-07-16 |
CN101847689B (zh) | 2014-01-01 |
CN1918722B (zh) | 2010-05-12 |
JP2007523446A (ja) | 2007-08-16 |
EP1711970A1 (de) | 2006-10-18 |
WO2005069400A1 (en) | 2005-07-28 |
EP1990845A1 (de) | 2008-11-12 |
EP1704587B1 (de) | 2015-02-11 |
EP1990845B1 (de) | 2012-10-24 |
JP2012054566A (ja) | 2012-03-15 |
DE602005009495D1 (de) | 2008-10-16 |
KR101142991B1 (ko) | 2012-05-24 |
JP5329630B2 (ja) | 2013-10-30 |
WO2005069401A1 (en) | 2005-07-28 |
CN1918722A (zh) | 2007-02-21 |
EP1711970B1 (de) | 2008-09-03 |
JP5216217B2 (ja) | 2013-06-19 |
KR20070004627A (ko) | 2007-01-09 |
US20150221896A1 (en) | 2015-08-06 |
US20070278478A1 (en) | 2007-12-06 |
CN1918724A (zh) | 2007-02-21 |
US7638793B2 (en) | 2009-12-29 |
EP1704587A1 (de) | 2006-09-27 |
US20070295955A1 (en) | 2007-12-27 |
CN101847689A (zh) | 2010-09-29 |
GB0400997D0 (en) | 2004-02-18 |
CN1918724B (zh) | 2010-06-23 |
SG149855A1 (en) | 2009-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE407457T1 (de) | Ambipolare, lichtemittierende feldeffekttransistoren | |
TW200625685A (en) | Organic semiconductor light-emitting device and display using same | |
ATE376762T1 (de) | Organische el-einrichtung | |
ATE524841T1 (de) | Organische elektrolumineszente vorrichtung | |
ATE452954T1 (de) | Organische elektrolumineszenzvorrichtung und anthracenderivat | |
ATE412721T1 (de) | Organische elektrolumineszente vorrichtung | |
TW200726319A (en) | Organic light emitting devices | |
WO2009123763A3 (en) | Light-emitting device including quantum dots | |
ATE410792T1 (de) | Elektrolumineszenzbauelement | |
WO2010129889A3 (en) | Light emitting device including semiconductor nanocrystals | |
ATE430172T1 (de) | WÄßRIGE DISPERSIONEN VON POLYTHIENOTHIOPHENEN MIT FLUORIERTEN IONENAUSTAUSCH-POLYMEREN ALS DOTIERSTOFFE. | |
ATE433200T1 (de) | Organisches elektrolumineszenzbauelement und herstellungsverfahren dafür | |
TW200735709A (en) | Organic electroluminescent device | |
FR2886059A1 (fr) | Dispositif electroluminescent organique empile et dispositif d'affichage le comprenant | |
TW200637050A (en) | OLED-device with patterned light emitting layer thickness | |
ATE381117T1 (de) | Anordnung für eine organische leuchtdiode vom pin-typ und verfahren zum herstellen | |
TW200740723A (en) | Aromatic amine derivative and organic electroluminescent element using the same | |
ATE489730T1 (de) | Elektronisches bauteil | |
TW200730028A (en) | Stability enhancement of opto-electronic devices | |
TW200600565A (en) | New material for injecting or transporting holes and organic electroluminescence devices using the same | |
ATE535132T1 (de) | Elektrolumineszenzbauelement | |
ATE472178T1 (de) | Organische elektrolumineszente anzeigevorrichtung | |
TW200624535A (en) | Organic light-emitting devices with improved performance | |
TW200512273A (en) | Light emitting compound and light emitting device | |
TW200706633A (en) | Organic light emitting diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |