JP5552205B2 - N−チャネルトランジスタ - Google Patents
N−チャネルトランジスタ Download PDFInfo
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- JP5552205B2 JP5552205B2 JP2006548405A JP2006548405A JP5552205B2 JP 5552205 B2 JP5552205 B2 JP 5552205B2 JP 2006548405 A JP2006548405 A JP 2006548405A JP 2006548405 A JP2006548405 A JP 2006548405A JP 5552205 B2 JP5552205 B2 JP 5552205B2
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- transistor
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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Description
バンドギャップ(ΔE)は、例えば光吸収を用いて測定される。数多くの共役ポリマーの場合、励起子結合エネルギー(BE)は、広く一般に0.4eVに維持される。
非反応性トラップの場合、トラッピングは、可逆的であるため、非トラッピングとなる基についての基準は、EAsemicond未満となるべき誘電体材料(EAx)中の化学基の固体状態EAについてのものである。例として、一般的な基のいくつかのEAx値を以下に示す。本発明によると、これらの値は、気相EAデータから算出される。固体状態EAx値は、M. Pope and C.E. Swenberg, Electronic Processes in Organic Crystals and Polymers (Oxford University Press, 1999) によって与えられているように、ここでは1.8eVとされる固体状態分極エネルギーを加えることによって、気相EAから算出される。
(a)脂肪族カルボニル(-CO-、-COO-、-CONR-)およびCN 1.8-2.0
(b)芳香族カルボニル(-CO-、-COO-、-CONR-) 2.0-2.4
(c)芳香族フルオロカーボン 2.3
(d)キノキサリン 2.5
(e)脂肪族フルオロカーボン 2.8-2.9
(f)キノン 3.4-3.6
aは、適切なモデル化合物の気相EAに分極エネルギー(本発明の目的では1.8eVとされる)を加えることによって得られる。
このようなトラップは、デトラッピングを不可能とする結合反応にさらされる。結合反応の一例としては、活性水素を持つ部分からの水素原子の放出が挙げられる。一旦この水素原子が(水素ガスを提供するための何らかの他のラジカル反応または再結合によって)失われると、電子電荷は、何らかの電荷中和事象が生じるまで不可逆的に部分にトラップされる。いずれの場合でも、初期にトラップされた電子が再放出されることはなく、ゲート誘電体の容量性電荷密度は、このような固定の電荷によって充填される。反応性トラップの場合、非トラッピングとなる基の基準は、反応自由エネルギーを考慮することを必要とする。反応性トラップの気相EA値は、得ることができない。従って、本発明の目的では、このような基の反応性電子親和力を考慮しさえすればよい。
Semicond−(s)+Diel-COOH(s)→Semicond(s)+Diel-COO−(s)+H(s)
であり、これは、初期に半導体(Semicond−)に存在していた誘導された電子がH原子を失うことで誘電体(Diel−COO−)の−COO−にトラッピングされることを表している。
(i) Semicond−(s)→Semicond(s)+e−(g) EAsemicond
(ii) Diel-COOH(s)+e−(g)→Diel-COO−(s)+H(s) −(EArxn)
反応(ii)は、水素原子の放出を必要とする。ここで、反応(ii)のエネルギー論は、負の反応性電子親和力(EArxn)として表される。従って、本発明は、反応性トラップのEArxnを定義しており、対応の小分子モデルに対するボルン−ハーバー熱力学サイクルを用いて見積もることができるものであり、その一例は、次の通りである。
(ii)(a) Diel-COOH(s)→Diel-COOH(g) ΔGsub1
(ii)(b) Diel-COOH(g)→Diel-COO−(g)+H+(g) ΔGdeprot
(ii)(c) H+(g)+e−(g)→H(g) −ΔGion,H
(ii)(d) Diel-COO−(g)→Diel-COO−(s) ΔGpolar−ΔGsub1
(ii)(e) H(g)→H(s) −ΔGsub1.H
ここで、Diel−COOHモデルの小分子のために、3つの主なエネルギー用語は、それぞれ、気相脱プロトン化エネルギー(ΔGdeprot)、負の水素原子イオン化エネルギー(−ΔGion,H=−13.6eV)、および媒質分極エネルギー(ΔGpolar、ここでは−1.8eVとされる)である。
(a)脂肪族-NHR 16.6 -1.2
(b)脂肪族-OH 15.9 -0.5
(c)芳香族-NHR 15.5 -0.1
(d)脂肪族-SH 15.1 0.3
(e)芳香族-OH 14.8 0.6
(f)脂肪族-COOH 14.8 0.6
(g)芳香族-SH 14.5 0.9
(h)芳香族-COOH 14.5 0.9
実施例1:
一般的な原則の例示として、200nmのSiO2層を持つp−ドープシリコン基板を、メシチレン(mesitylene)中の4.4w/v%BCB(シクロテン(登録商標、ダウケミカル社))溶液をスピンすることによって厚み50nmのBCB層でコーティングし、次に、290度に設定したホットプレート上で15秒間、窒素下で(pO2<5ppm)超高速熱アニールする。次いで、必要とされている有機半導体を、適切な溶媒中の1.3−1.8w/v%溶液から50−80nmの厚みの薄膜として基板全体にスピンキャストする。試験を行った共役ポリマーの範囲は、次の通りである。(i)混合キシレンから得られたポリ(9,9−ジオクチルフルオレン−アルト−ベンゾ−2−チア−1,3−ジアゾール)(poly(9,9-dioctylfluorene-alt-benzo-2-thia-1,3-diazole))(「F8BT」)、(ii)混合キシレンから得られたポリ(9,9−ジオクチルフルオレン−2,7−ジイル)(poly(9,9-dioctylfluorene-2,7-diyl))(「F8」)、(iii)トルエンから得られたポリ(2,5−ジヘキシル−p−フェニレンビニレン−コ−α,α−ジシアノ−2,5−ジヘキシル−p−フェニレンビニレン)(poly(2,5-dihexyl-p-phenylenevinylene-co-α,α’-dicyano-2,5-dihexyl-p-phenylenevinylene))(「CN−PPV」)、(iv)1:3(v/v)THF:トルエンから得られたポリ(2−メトキシ−5−(3,7−ジメチル)オクトキシ−p−フェニレンビニレン)(poly(2-methoxy-5-(3,7-dimethyl)octoxy-p-phenylenevinylene)(「OC1C10−PPV」)、および(v)メタノールから得られた前駆体PPV(「PPV」)である。100nmのカルシウム電極をシャドウマスクを介して蒸着し、この電極を30nmのSiOに封入して、チャンネルの長さが25μmで幅が2.5mmのソース−ドレイントップコンタクト電極を得た。次に、トランジスタをグローブボックス内で試験した。
一般原則をさらに例示するものとして、今回は、アルミニウムソース−ドレイン電極を用いる。200nmのSiO2層を持つp−ドープシリコン基板を、メシチレン(mesitylene)中の4.4w/v%BCB(シクロテン(登録商標)、ダウケミカル社)溶液をスピンすることによって厚み50nmのBCB層でコーティングし、次に、290度に設定したホットプレート上で15秒間、窒素下で(pO2<5ppm)超高速熱アニールする。次いで、必要とされている有機半導体を、適切な溶媒中の1.3−1.8w/v%溶液から50−80nmの厚みの薄膜として基板全体にスピンキャストする。試験を行った2つの共役ポリマーは、次の通りである。(i)混合キシレンから得られたポリ(9,9−ジオクチルフルオレン−アルト−ベンゾ−2−チア−1,3−ジアゾル)(poly(9,9-dioctylfluorene-alt-benzo-2-thia-1,3-diazole))(「F8BT」)、および(ii)トルエンから得られたポリ(2,5−ジヘキシル−p−フェニレンビニレン−コ−α,α−ジシアノ−2,5−ジヘキシル−p−フェニレンビニレン)(poly(2,5-dihexyl-p-phenylenevinylene-co-α,α’-dicyano-2,5-dihexyl-p-phenylenevinylene))(「CN−PPV」)である。100nmのアルミニウム電極をシャドウマスクを介して蒸着する。次に、トランジスタをグローブボックス内で試験した。
一般原則をさらに例示するものとして、今回は、ガラス基板上にパターン化された金ソース−ドレイン電極およびトップゲートを用いる。ガラス基板を、混合キシレン中の1.7w/v%溶液から得られる50−80nmの厚みのポリ(9,9−ジオクチルフルオレン−アルト−ベンゾ−2−チア−1,3−ジアゾル)(poly(9,9-dioctylfluorene-alt-benzo-2-thia-1,3-diazole))でコーティングする。次に、30−40℃でデカン中の12.7w/v%BCB(ダウケミカル社のシクロテン(登録商標)から抽出)から厚みが200nmのBCB層をスピンすることによってゲート誘電体層を堆積し、そして290℃に設定したホットプレート上で15秒間、窒素下で(pO2<5ppm)超高速熱アニールする。次に、表面活性イオン交換ポリ(3,4−エチレンジオキシチオフェン)(poly(3,4-ethylenedioxythiophene))−ポリ(スチレンスルホネート)(poly(styrenesulfonate))錯体(「PEDT:PSSR」)を印刷することによってトップゲート電極を堆積する。この表面活性イオン交換PEDT:PSSR錯体は、バイトロンP(ドイツのHC Starck of Leverkusen社)から作成されるもので、バイトロンPをポリ(スチレンスルホン酸)(poly(styrenesulfonic acid))で富裕化してPEDT:PSS比を10−16とした後、ヘキサデシルトリメチルアンモニウム(hexadecyltrimethylammonium)で透析交換することにより作成される。
Claims (19)
- 電子親和力がEAsemicondである有機半導体層と、
前記半導体層と界面を形成する有機ゲート誘電体層と
を備えるn−チャネルまたは両極性の電界効果トランジスタであって、
前記ゲート誘電体層中のトラッピング基のバルク濃度が1018cm−3未満であり、
前記トラッピング基は、(i)EAsemicond以上の電子親和力EAxおよび/または(ii)(EAsemicond.−2eV)以上の反応性電子親和力EArxnを持つ基である
ことを特徴とする、n−チャネルまたは両極性の電界効果トランジスタ。 - 前記トランジスタは、両極性電界効果トランジスタである
ことを特徴とする、請求項1に記載のトランジスタ。 - EAsemicondは、2eV以上である
ことを特徴とする、請求項1または2に記載のトランジスタ。 - EAsemicondは、2eVから4eVの範囲である
ことを特徴とする、請求項3に記載のトランジスタ。 - 前記ゲート誘電体層は、有機絶縁材料を備え、
前記有機絶縁材料は、トラッピング基を含む繰り返し単位または残留単位を含んでいない
ことを特徴とする、請求項1ないし4の何れかに記載のトランジスタ。 - 前記有機絶縁材料は、(i)3eV以上の電子親和力EAxおよび/または(ii)0.5eV以上の反応性電子親和力EArxnを持つ基を含む繰り返し単位または残留単位は含んでいない
ことを特徴とする、請求項5に記載のトランジスタ。 - 前記有機絶縁材料は、キノン(quinone)、芳香族−OH、脂肪族−COOH、芳香族−SH、または芳香族−COOH基を含む繰り返し単位または残留単位を含んでいない
ことを特徴とする、請求項6に記載のトランジスタ。 - 前記有機絶縁材料は、アルケン(alkene)、アルキレン(alkylene)、シクロアルケン(cy cloalkene)、シクロアルキレン(cycloalkylene)、シロキサン(siloxane)、エーテル酸素(ether oxygen)、アルキル(alkyl)、シクロアルキル(cycloalkyl)、フェニル(phenyl)、およびフェニレン(phenylene)基から選択される1つ以上の基を含んでいる
ことを特徴とする、請求項5ないし7の何れかに記載のトランジスタ。 - 前記有機絶縁材料は、絶縁ポリマーを含んでいる
ことを特徴とする、請求項5ないし8の何れかに記載のトランジスタ。 - 前記絶縁ポリマーは、置換されたおよび置換されていないポリ(シロキサン)(poly(s iloxane))およびそのコポリマー、置換されたおよび置換されていないポリ(アルケン)(poly(alkene))およびそのコポリマー、置換されたおよび置換されていないポリ(スチレン)(poly(styrene))およびそのコポリマー、置換されたおよび置換されていないポリ(オキシアルキレン)(poly(oxyalkylene))およびそのコポリマーから選択される
ことを特徴とする、請求項9に記載のトランジスタ。 - 前記絶縁ポリマーの骨格は、−Si(R)2−O−Si(R)2−を含む繰り返し単位を含んでおり、ここで、それぞれのRは、独立してメチル(methyl)または置換されているまたは置換されていないフェニル(phenyl)である
ことを特徴とする、請求項10に記載のトランジスタ。 - 前記絶縁ポリマーは、架橋されている
ことを特徴とする、請求項9ないし11の何れかに記載のトランジスタ。 - 前記有機半導体層は、半導体ポリマーを含んでいる
ことを特徴とする、請求項1ないし12の何れかに記載のトランジスタ。 - 前記有機半導体層は、半導体オリゴマーを含んでいる
ことを特徴とする、請求項1ないし12の何れかに記載のトランジスタ。 - 前記有機半導体層は、半導体小分子を含んでいる
ことを特徴とする、請求項1ないし12の何れかに記載のトランジスタ。 - n−チャネルまたは両極性の電界効果トランジスタでn−チャネル伝導を行うための請求項1ないし15の何れかに記載のトランジスタの使用法。
- 請求項1ないし15の何れかに定義されているトランジスタを備える回路。
- 請求項1ないし15の何れかに定義されているトランジスタを備える相補型回路。
- 請求項1ないし15の何れかに定義されているトランジスタを備える論理回路。
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GBGB0400997.3A GB0400997D0 (en) | 2004-01-16 | 2004-01-16 | N-channel transistor |
GB0400997.3 | 2004-01-16 | ||
PCT/GB2005/000132 WO2005069401A1 (en) | 2004-01-16 | 2005-01-17 | N-channel transistor |
Publications (2)
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JP2007518259A JP2007518259A (ja) | 2007-07-05 |
JP5552205B2 true JP5552205B2 (ja) | 2014-07-16 |
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JP2006548404A Active JP5216217B2 (ja) | 2004-01-16 | 2005-01-17 | 両極性発光電界効果トランジスタ |
JP2006548405A Expired - Fee Related JP5552205B2 (ja) | 2004-01-16 | 2005-01-17 | N−チャネルトランジスタ |
JP2011211888A Active JP5329630B2 (ja) | 2004-01-16 | 2011-09-28 | 両極性発光電界効果トランジスタ |
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US (3) | US20070278478A1 (ja) |
EP (3) | EP1711970B1 (ja) |
JP (3) | JP5216217B2 (ja) |
KR (1) | KR101142991B1 (ja) |
CN (3) | CN101847689B (ja) |
AT (1) | ATE407457T1 (ja) |
DE (1) | DE602005009495D1 (ja) |
GB (1) | GB0400997D0 (ja) |
SG (1) | SG149855A1 (ja) |
WO (2) | WO2005069401A1 (ja) |
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DE102005048774B4 (de) * | 2005-10-07 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung |
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JP2007200829A (ja) * | 2005-12-27 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 有機発光トランジスタ |
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JP5152493B2 (ja) * | 2007-03-26 | 2013-02-27 | 国立大学法人大阪大学 | 有機電界効果トランジスター及びその製造方法 |
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US20170154790A1 (en) * | 2015-11-30 | 2017-06-01 | Intel Corporation | Sam assisted selective e-less plating on packaging materials |
CN107425035B (zh) * | 2017-05-11 | 2019-11-05 | 京东方科技集团股份有限公司 | 有机发光晶体管和显示面板 |
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GB0400997D0 (en) * | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
WO2005079119A1 (ja) * | 2004-02-16 | 2005-08-25 | Japan Science And Technology Agency | 発光型トランジスタ |
JP5137296B2 (ja) * | 2004-03-19 | 2013-02-06 | 三菱化学株式会社 | 電界効果トランジスタ |
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2004
- 2004-01-16 GB GBGB0400997.3A patent/GB0400997D0/en not_active Ceased
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2005
- 2005-01-17 KR KR1020067016478A patent/KR101142991B1/ko active IP Right Grant
- 2005-01-17 CN CN201010168735.7A patent/CN101847689B/zh active Active
- 2005-01-17 WO PCT/GB2005/000132 patent/WO2005069401A1/en active Application Filing
- 2005-01-17 JP JP2006548404A patent/JP5216217B2/ja active Active
- 2005-01-17 SG SG200900370-8A patent/SG149855A1/en unknown
- 2005-01-17 DE DE602005009495T patent/DE602005009495D1/de active Active
- 2005-01-17 EP EP05701898A patent/EP1711970B1/en active Active
- 2005-01-17 CN CN2005800050014A patent/CN1918722B/zh not_active Expired - Fee Related
- 2005-01-17 EP EP08158240A patent/EP1990845B1/en active Active
- 2005-01-17 US US10/586,244 patent/US20070278478A1/en not_active Abandoned
- 2005-01-17 AT AT05701898T patent/ATE407457T1/de not_active IP Right Cessation
- 2005-01-17 JP JP2006548405A patent/JP5552205B2/ja not_active Expired - Fee Related
- 2005-01-17 CN CN200580005000XA patent/CN1918724B/zh active Active
- 2005-01-17 US US10/586,149 patent/US7638793B2/en active Active
- 2005-01-17 EP EP05701900.2A patent/EP1704587B1/en not_active Not-in-force
- 2005-01-17 WO PCT/GB2005/000130 patent/WO2005069400A1/en active IP Right Grant
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- 2011-09-28 JP JP2011211888A patent/JP5329630B2/ja active Active
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Also Published As
Publication number | Publication date |
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WO2005069400A1 (en) | 2005-07-28 |
EP1711970B1 (en) | 2008-09-03 |
CN1918724A (zh) | 2007-02-21 |
ATE407457T1 (de) | 2008-09-15 |
CN1918722B (zh) | 2010-05-12 |
JP2007518259A (ja) | 2007-07-05 |
WO2005069401A1 (en) | 2005-07-28 |
DE602005009495D1 (de) | 2008-10-16 |
EP1990845A1 (en) | 2008-11-12 |
SG149855A1 (en) | 2009-02-27 |
CN101847689B (zh) | 2014-01-01 |
JP2007523446A (ja) | 2007-08-16 |
GB0400997D0 (en) | 2004-02-18 |
KR20070004627A (ko) | 2007-01-09 |
US20150221896A1 (en) | 2015-08-06 |
JP5216217B2 (ja) | 2013-06-19 |
US20070295955A1 (en) | 2007-12-27 |
EP1711970A1 (en) | 2006-10-18 |
EP1704587A1 (en) | 2006-09-27 |
CN1918722A (zh) | 2007-02-21 |
EP1704587B1 (en) | 2015-02-11 |
EP1990845B1 (en) | 2012-10-24 |
JP5329630B2 (ja) | 2013-10-30 |
CN1918724B (zh) | 2010-06-23 |
US20070278478A1 (en) | 2007-12-06 |
JP2012054566A (ja) | 2012-03-15 |
CN101847689A (zh) | 2010-09-29 |
US7638793B2 (en) | 2009-12-29 |
KR101142991B1 (ko) | 2012-05-24 |
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