ATE404713T1 - Lösung zum ätzen von kupferoberflächen und verfahren zur abscheidung von metall auf kupferoberflächen - Google Patents
Lösung zum ätzen von kupferoberflächen und verfahren zur abscheidung von metall auf kupferoberflächenInfo
- Publication number
- ATE404713T1 ATE404713T1 AT04720872T AT04720872T ATE404713T1 AT E404713 T1 ATE404713 T1 AT E404713T1 AT 04720872 T AT04720872 T AT 04720872T AT 04720872 T AT04720872 T AT 04720872T AT E404713 T1 ATE404713 T1 AT E404713T1
- Authority
- AT
- Austria
- Prior art keywords
- solution
- copper
- copper surfaces
- etching
- sulfonic acids
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052802 copper Inorganic materials 0.000 title abstract 4
- 239000010949 copper Substances 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 2
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- -1 aromatic sulfonic acids Chemical class 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 150000004965 peroxy acids Chemical class 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Chemically Coating (AREA)
- Chemical Treatment Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10313517A DE10313517B4 (de) | 2003-03-25 | 2003-03-25 | Lösung zum Ätzen von Kupfer, Verfahren zum Vorbehandeln einer Schicht aus Kupfer sowie Anwendung des Verfahrens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE404713T1 true ATE404713T1 (de) | 2008-08-15 |
Family
ID=32980716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04720872T ATE404713T1 (de) | 2003-03-25 | 2004-03-16 | Lösung zum ätzen von kupferoberflächen und verfahren zur abscheidung von metall auf kupferoberflächen |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20060189141A1 (de) |
| EP (1) | EP1606431B1 (de) |
| JP (1) | JP4445960B2 (de) |
| KR (1) | KR101059707B1 (de) |
| CN (1) | CN100379898C (de) |
| AT (1) | ATE404713T1 (de) |
| DE (2) | DE10313517B4 (de) |
| MY (1) | MY140151A (de) |
| TW (1) | TW200502437A (de) |
| WO (1) | WO2004085706A1 (de) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004014680B3 (de) * | 2004-03-25 | 2005-07-28 | Dr.-Ing. Max Schlötter GmbH & Co KG | Entmetallisierungslösung und deren Verwendung |
| CN100368598C (zh) * | 2005-08-09 | 2008-02-13 | 广东省石油化工研究院 | 一种铜或铜合金的表面平滑微蚀处理液 |
| DE102006042032A1 (de) * | 2006-09-07 | 2008-03-27 | Infineon Technologies Ag | Halbleiterbauelement |
| JP5273710B2 (ja) * | 2007-11-27 | 2013-08-28 | メック株式会社 | エッチング剤 |
| ATE465283T1 (de) * | 2008-02-29 | 2010-05-15 | Atotech Deutschland Gmbh | Pyrophosphat-basiertes bad zur abscheidung von zinn-legierungsschichten |
| CN102037157B (zh) † | 2008-03-21 | 2014-05-28 | 恩索恩公司 | 用多官能化合物促进金属对层压板的粘合力 |
| EP2241653B1 (de) * | 2009-04-15 | 2017-09-06 | ATOTECH Deutschland GmbH | Zusammensetzung und Verfahren zur Mikroätzung von Kupfer und Kupferlegierungen |
| DE102010011269B4 (de) * | 2009-11-10 | 2014-02-13 | Ami Doduco Gmbh | Verfahren zum Abscheiden einer für das Drahtbonden geeigneten Palladiumschicht auf Leiterbahnen einer Schaltungsträgerplatte und Verwendung eines Palladiumbades in dem Verfahren |
| KR101829399B1 (ko) * | 2010-03-04 | 2018-03-30 | 삼성전자주식회사 | 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정 |
| EP2537962A1 (de) | 2011-06-22 | 2012-12-26 | Atotech Deutschland GmbH | Verfahren zur Kupferplattierung |
| WO2013004624A1 (en) | 2011-07-07 | 2013-01-10 | Atotech Deutschland Gmbh | Method for providing organic resist adhesion to a copper or copper alloy surface |
| TWI601250B (zh) * | 2011-07-22 | 2017-10-01 | 先進封裝技術私人有限公司 | 用於製造半導體封裝元件之半導體結構及其製造方法 |
| CN103060805B (zh) * | 2011-08-22 | 2014-12-17 | 东友精细化工有限公司 | 金属配线形成方法 |
| US8747643B2 (en) * | 2011-08-22 | 2014-06-10 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| JP2013104104A (ja) * | 2011-11-14 | 2013-05-30 | Mec Kk | エッチング液、補給液及び銅配線の形成方法 |
| CN103137570B (zh) | 2011-11-29 | 2016-02-10 | 先进封装技术私人有限公司 | 基板结构、半导体封装元件及基板结构的制造方法 |
| US9523154B2 (en) | 2011-12-20 | 2016-12-20 | Solvay (China) Co., Ltd. | Use of phenol compounds as activator for metal surface corrosion |
| KR101394133B1 (ko) * | 2012-08-22 | 2014-05-15 | 주식회사 이엔에프테크놀로지 | 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 |
| KR101517013B1 (ko) * | 2013-10-02 | 2015-05-04 | 주식회사 이엔에프테크놀로지 | 구리 및 몰리브덴 함유 막의 식각액 조성물 |
| JP6400897B2 (ja) * | 2013-11-06 | 2018-10-03 | ニッタ・ハース株式会社 | 研磨組成物 |
| CN116286222A (zh) | 2014-05-13 | 2023-06-23 | 巴斯夫欧洲公司 | Tin拉回和清洁组合物 |
| CN106207596A (zh) * | 2016-06-28 | 2016-12-07 | 杭州华锦电子有限公司 | 一种密封接线座注胶工艺 |
| JP7027323B2 (ja) * | 2016-10-21 | 2022-03-01 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
| CN109280919B (zh) * | 2017-07-20 | 2020-11-24 | 添鸿科技股份有限公司 | 含铜金属用的蚀刻剂组成物 |
| KR102579768B1 (ko) * | 2018-10-05 | 2023-09-19 | 솔브레인 주식회사 | 식각액 조성물 및 이를 이용한 금속막 식각 방법 |
| CN111945139B (zh) * | 2020-07-27 | 2022-07-12 | 江苏富乐华半导体科技股份有限公司 | 一种覆铜陶瓷基板镀镍方法 |
| CN115141629B (zh) * | 2022-06-15 | 2023-06-02 | 湖北兴福电子材料股份有限公司 | TiN去除液 |
| CN117144367B (zh) * | 2023-10-30 | 2023-12-26 | 深圳市板明科技股份有限公司 | 一种ic封装载板用线路蚀刻溶液及其制备方法与应用 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221460B1 (de) * | 1971-04-26 | 1977-06-10 | ||
| SE425007B (sv) | 1976-01-05 | 1982-08-23 | Shipley Co | Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma |
| IT1083401B (it) | 1977-05-27 | 1985-05-21 | Alfachimici Spa | Soluzione acida per l'attacco selettivo del rame |
| JPS5873775A (ja) * | 1981-10-28 | 1983-05-04 | Nippon Peroxide Co Ltd | 銅のソフトエツチング剤 |
| JPH0770767A (ja) * | 1993-09-01 | 1995-03-14 | Mitsubishi Gas Chem Co Inc | 銅張積層板用表面処理液および表面処理法 |
| US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
| TW374802B (en) * | 1996-07-29 | 1999-11-21 | Ebara Densan Ltd | Etching composition, method for roughening copper surface and method for producing printed wiring board |
| US6187169B1 (en) * | 1996-09-16 | 2001-02-13 | Atofina Chemicals, Inc. | Generation of organosulfonic acid from its salts |
| GB9620877D0 (en) * | 1996-10-07 | 1996-11-27 | Solvay Interox Ltd | Metal surface treatment |
| JPH116083A (ja) * | 1997-06-13 | 1999-01-12 | Hitachi Ltd | 銅または銅合金用溶解液、その製造方法、銅または銅合金のエッチング方法、化学研磨方法および形成方法、ならびに、プリント配線基板の製造方法 |
| JPH1129883A (ja) * | 1997-07-08 | 1999-02-02 | Mec Kk | 銅および銅合金のマイクロエッチング剤 |
| US6284309B1 (en) * | 1997-12-19 | 2001-09-04 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
| US6036758A (en) * | 1998-08-10 | 2000-03-14 | Pmd (U.K.) Limited | Surface treatment of copper |
| JP2000282265A (ja) * | 1999-03-31 | 2000-10-10 | Mec Kk | 銅または銅合金のマイクロエッチング剤およびそれを用いる表面処理法 |
| US7351353B1 (en) * | 2000-01-07 | 2008-04-01 | Electrochemicals, Inc. | Method for roughening copper surfaces for bonding to substrates |
| US6451697B1 (en) * | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
| TW571005B (en) * | 2000-06-29 | 2004-01-11 | Ebara Corp | Method and apparatus for forming copper interconnects, and polishing liquid and polishing method |
| JP3837277B2 (ja) * | 2000-06-30 | 2006-10-25 | 株式会社東芝 | 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 |
| DE10034022C2 (de) * | 2000-07-07 | 2003-05-08 | Atotech Deutschland Gmbh | Saure Behandlungsflüssigkeit und deren Verwendung sowie Verfahren zum Behandeln von Kupferoberflächen |
| US6506314B1 (en) * | 2000-07-27 | 2003-01-14 | Atotech Deutschland Gmbh | Adhesion of polymeric materials to metal surfaces |
| JP4033611B2 (ja) * | 2000-07-28 | 2008-01-16 | メック株式会社 | 銅または銅合金のマイクロエッチング剤およびそれを用いるマイクロエッチング法 |
| JP3930732B2 (ja) * | 2000-12-27 | 2007-06-13 | 荏原ユージライト株式会社 | 銅および銅合金用のマイクロエッチング剤並びにこれを用いる銅または銅合金の微細粗化方法 |
-
2003
- 2003-03-25 DE DE10313517A patent/DE10313517B4/de not_active Expired - Fee Related
-
2004
- 2004-03-16 CN CNB2004800082580A patent/CN100379898C/zh not_active Expired - Fee Related
- 2004-03-16 EP EP04720872A patent/EP1606431B1/de not_active Expired - Lifetime
- 2004-03-16 DE DE602004015748T patent/DE602004015748D1/de not_active Expired - Lifetime
- 2004-03-16 WO PCT/EP2004/002702 patent/WO2004085706A1/en active IP Right Grant
- 2004-03-16 AT AT04720872T patent/ATE404713T1/de active
- 2004-03-16 US US10/550,829 patent/US20060189141A1/en not_active Abandoned
- 2004-03-16 JP JP2006504699A patent/JP4445960B2/ja not_active Expired - Fee Related
- 2004-03-16 KR KR1020057018001A patent/KR101059707B1/ko not_active IP Right Cessation
- 2004-03-23 MY MYPI20041027A patent/MY140151A/en unknown
- 2004-03-25 TW TW093108136A patent/TW200502437A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE10313517A1 (de) | 2004-10-14 |
| KR20050110699A (ko) | 2005-11-23 |
| KR101059707B1 (ko) | 2011-08-29 |
| JP2006521464A (ja) | 2006-09-21 |
| US20060189141A1 (en) | 2006-08-24 |
| WO2004085706A1 (en) | 2004-10-07 |
| DE602004015748D1 (de) | 2008-09-25 |
| JP4445960B2 (ja) | 2010-04-07 |
| CN1764739A (zh) | 2006-04-26 |
| MY140151A (en) | 2009-11-30 |
| TW200502437A (en) | 2005-01-16 |
| EP1606431B1 (de) | 2008-08-13 |
| EP1606431A1 (de) | 2005-12-21 |
| DE10313517B4 (de) | 2006-03-30 |
| CN100379898C (zh) | 2008-04-09 |
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