ATE393479T1 - Metallkatalysatortechnik zum texturieren von silizium-solarzellen - Google Patents

Metallkatalysatortechnik zum texturieren von silizium-solarzellen

Info

Publication number
ATE393479T1
ATE393479T1 AT01955043T AT01955043T ATE393479T1 AT E393479 T1 ATE393479 T1 AT E393479T1 AT 01955043 T AT01955043 T AT 01955043T AT 01955043 T AT01955043 T AT 01955043T AT E393479 T1 ATE393479 T1 AT E393479T1
Authority
AT
Austria
Prior art keywords
metal
solar cells
silicon solar
metal catalyst
reactive ion
Prior art date
Application number
AT01955043T
Other languages
English (en)
Inventor
Douglas Ruby
Saleem Zaidi
Original Assignee
Sandia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandia Corp filed Critical Sandia Corp
Application granted granted Critical
Publication of ATE393479T1 publication Critical patent/ATE393479T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
  • Drying Of Semiconductors (AREA)
AT01955043T 2000-08-09 2001-08-03 Metallkatalysatortechnik zum texturieren von silizium-solarzellen ATE393479T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/634,905 US6329296B1 (en) 2000-08-09 2000-08-09 Metal catalyst technique for texturing silicon solar cells

Publications (1)

Publication Number Publication Date
ATE393479T1 true ATE393479T1 (de) 2008-05-15

Family

ID=24545629

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01955043T ATE393479T1 (de) 2000-08-09 2001-08-03 Metallkatalysatortechnik zum texturieren von silizium-solarzellen

Country Status (7)

Country Link
US (1) US6329296B1 (de)
EP (1) EP1316115B1 (de)
JP (1) JP3855105B2 (de)
AT (1) ATE393479T1 (de)
AU (1) AU2001277250A1 (de)
DE (1) DE60133749D1 (de)
WO (1) WO2002013279A2 (de)

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US7193128B2 (en) * 1997-06-03 2007-03-20 Chromatin, Inc. Methods for generating or increasing revenues from crops
US6897085B2 (en) 2003-01-21 2005-05-24 Spheral Solar Power, Inc. Method of fabricating an optical concentrator for a photovoltaic solar cell
US20060185715A1 (en) * 2003-07-25 2006-08-24 Hammerbacher Milfred D Photovoltaic apparatus including spherical semiconducting particles
US20050148198A1 (en) * 2004-01-05 2005-07-07 Technion Research & Development Foundation Ltd. Texturing a semiconductor material using negative potential dissolution (NPD)
US7563722B2 (en) * 2004-03-05 2009-07-21 Applied Nanotech Holdings, Inc. Method of making a textured surface
DE102005048361B4 (de) * 2005-10-10 2011-07-14 X-FAB Semiconductor Foundries AG, 99097 Verfahren zur lokalen Beschichtung von Halbleiterschaltungen und diskreten Bauelementen mit einer thermischen SiO2-Schicht, deren Oberflächen Gebiete mit nadelförmigen Strukturen in Nanometerdimensionen enthalten
DE102005048366A1 (de) * 2005-10-10 2007-04-19 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von defektarmen selbstorganisierten nadelartigen Strukturen mit Nano-Dimensionen im Bereich unterhalb der üblichen Lichtwellenlängen mit großem Aspektverhältnis
EP1935035A2 (de) * 2005-10-10 2008-06-25 X-FAB Semiconductor Foundries AG Herstellung von selbstorganisierten nadelartigen nano-strukturen und ihre recht umfangreichen anwendungen
JP4852972B2 (ja) * 2005-10-26 2012-01-11 パナソニック電工株式会社 光学部品の製造方法及び発光素子
DE102006013670A1 (de) * 2006-03-24 2007-09-27 X-Fab Semiconductor Foundries Ag Breitbandig entspiegelte optische Bauteile mit gekrümmten Oberflächen
DE102006046131B4 (de) 2006-09-28 2020-06-25 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung einer optischen Schnittstelle für integrierte Optikanwendungen
DE102007024478A1 (de) * 2007-05-25 2008-11-27 Friedrich-Schiller-Universität Jena Fotoempfindliches Halbleiterbauelement
KR100971658B1 (ko) * 2008-01-03 2010-07-22 엘지전자 주식회사 실리콘 태양전지의 텍스처링 방법
US8729798B2 (en) 2008-03-21 2014-05-20 Alliance For Sustainable Energy, Llc Anti-reflective nanoporous silicon for efficient hydrogen production
US8075792B1 (en) * 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
US8815104B2 (en) * 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
WO2010105703A1 (en) 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for plasma texturing
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
WO2011060193A1 (en) 2009-11-11 2011-05-19 Alliance For Sustainable Energy, Llc Wet-chemical systems and methods for producing black silicon substrates
US8828765B2 (en) 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
US9330910B2 (en) 2010-11-01 2016-05-03 The Board Of Trustees Of The University Of Illinois Method of forming an array of nanostructures
CN104992990B (zh) * 2010-12-30 2018-05-11 深圳市石金科技股份有限公司 一种降低硅片表面光反射率的方法
CN103493214B (zh) 2011-01-26 2016-01-20 胜高股份有限公司 太阳能电池用晶片及其制备方法
WO2012121706A1 (en) 2011-03-08 2012-09-13 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
CN103236395B (zh) * 2011-05-25 2016-09-28 新加坡科技研究局 在基底上形成纳米结构的方法及其用途
TWI453927B (zh) 2011-06-29 2014-09-21 Ind Tech Res Inst 多重反射結構以及光電元件
TR201605860T1 (tr) * 2013-11-05 2016-11-21 Univ California Metal oksi̇t kenetli̇ grafen ve karbon nanotüp i̇çeren hi̇bri̇d köpük.
CN104393114A (zh) * 2014-11-17 2015-03-04 中国电子科技集团公司第四十八研究所 一种微纳复合绒面结构的多晶黑硅制备方法
CN106711240B (zh) * 2016-11-14 2018-06-05 华南师范大学 一种半透明太阳能电池的制备方法
CN109103301B (zh) * 2018-08-30 2020-07-07 鲁东大学 一种多晶硅表面微纳复合结构的制备方法
CN110729379B (zh) * 2019-10-16 2021-05-04 哈尔滨工业大学 一种具有超低反射率微纳复合结构的黑硅衬底制备方法

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US4229233A (en) * 1979-02-05 1980-10-21 International Business Machines Corporation Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching
US4478209A (en) * 1982-06-30 1984-10-23 Guarnieri C Richard Radiant energy collector having plasma-textured polyimide exposed surface
JP2000022185A (ja) * 1998-07-03 2000-01-21 Sharp Corp 太陽電池セル及びその製造方法

Also Published As

Publication number Publication date
JP2004506330A (ja) 2004-02-26
WO2002013279A2 (en) 2002-02-14
US6329296B1 (en) 2001-12-11
EP1316115A2 (de) 2003-06-04
EP1316115B1 (de) 2008-04-23
WO2002013279A3 (en) 2003-04-03
JP3855105B2 (ja) 2006-12-06
AU2001277250A1 (en) 2002-02-18
DE60133749D1 (de) 2008-06-05

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