AU2001277250A1 - Metal catalyst technique for texturing silicon solar cells - Google Patents

Metal catalyst technique for texturing silicon solar cells

Info

Publication number
AU2001277250A1
AU2001277250A1 AU2001277250A AU7725001A AU2001277250A1 AU 2001277250 A1 AU2001277250 A1 AU 2001277250A1 AU 2001277250 A AU2001277250 A AU 2001277250A AU 7725001 A AU7725001 A AU 7725001A AU 2001277250 A1 AU2001277250 A1 AU 2001277250A1
Authority
AU
Australia
Prior art keywords
metal
solar cells
silicon solar
metal catalyst
reactive ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277250A
Inventor
Douglas S. Ruby
Saleem Hussain Zaidi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Technology and Engineering Solutions of Sandia LLC
Original Assignee
Sandia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandia Corp filed Critical Sandia Corp
Publication of AU2001277250A1 publication Critical patent/AU2001277250A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.
AU2001277250A 2000-08-09 2001-08-03 Metal catalyst technique for texturing silicon solar cells Abandoned AU2001277250A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/634,905 2000-08-09
US09/634,905 US6329296B1 (en) 2000-08-09 2000-08-09 Metal catalyst technique for texturing silicon solar cells
PCT/US2001/024340 WO2002013279A2 (en) 2000-08-09 2001-08-03 Metal catalyst technique for texturing silicon solar cells

Publications (1)

Publication Number Publication Date
AU2001277250A1 true AU2001277250A1 (en) 2002-02-18

Family

ID=24545629

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277250A Abandoned AU2001277250A1 (en) 2000-08-09 2001-08-03 Metal catalyst technique for texturing silicon solar cells

Country Status (7)

Country Link
US (1) US6329296B1 (en)
EP (1) EP1316115B1 (en)
JP (1) JP3855105B2 (en)
AT (1) ATE393479T1 (en)
AU (1) AU2001277250A1 (en)
DE (1) DE60133749D1 (en)
WO (1) WO2002013279A2 (en)

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US7193128B2 (en) * 1997-06-03 2007-03-20 Chromatin, Inc. Methods for generating or increasing revenues from crops
US6897085B2 (en) * 2003-01-21 2005-05-24 Spheral Solar Power, Inc. Method of fabricating an optical concentrator for a photovoltaic solar cell
US20060185715A1 (en) * 2003-07-25 2006-08-24 Hammerbacher Milfred D Photovoltaic apparatus including spherical semiconducting particles
US20050148198A1 (en) * 2004-01-05 2005-07-07 Technion Research & Development Foundation Ltd. Texturing a semiconductor material using negative potential dissolution (NPD)
US7563722B2 (en) * 2004-03-05 2009-07-21 Applied Nanotech Holdings, Inc. Method of making a textured surface
US8350209B2 (en) * 2005-10-10 2013-01-08 X-Fab Semiconductor Foundries Ag Production of self-organized pin-type nanostructures, and the rather extensive applications thereof
DE102005048361B4 (en) * 2005-10-10 2011-07-14 X-FAB Semiconductor Foundries AG, 99097 Method for locally coating semiconductor circuits and discrete components with a thermal SiO 2 layer whose surfaces contain areas with needle-shaped structures in nanometer dimensions
DE102005048366A1 (en) * 2005-10-10 2007-04-19 X-Fab Semiconductor Foundries Ag A process for the preparation of low-defect self-organized needle-like structures with nano-dimensions in the range below the usual light wavelengths with high aspect ratio
JP4852972B2 (en) * 2005-10-26 2012-01-11 パナソニック電工株式会社 Optical component manufacturing method and light emitting device
DE102006013670A1 (en) * 2006-03-24 2007-09-27 X-Fab Semiconductor Foundries Ag Optical component for optoelectronic integrated circuit, has surface for wide band anti-reflection coating with needle-like structures with nanometer dimensions with larger aspect ratio, and developed by reactive ion etching process
DE102006046131B4 (en) 2006-09-28 2020-06-25 X-Fab Semiconductor Foundries Ag Process for manufacturing an optical interface for integrated optical applications
DE102007024478A1 (en) * 2007-05-25 2008-11-27 Friedrich-Schiller-Universität Jena Photosensitive semiconductor device
KR100971658B1 (en) * 2008-01-03 2010-07-22 엘지전자 주식회사 Method for texturing of silicon solar cell
US8075792B1 (en) * 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
US8815104B2 (en) * 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
US8729798B2 (en) 2008-03-21 2014-05-20 Alliance For Sustainable Energy, Llc Anti-reflective nanoporous silicon for efficient hydrogen production
JP2012521078A (en) 2009-03-17 2012-09-10 アイメック Plasma texture method
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
EP2697820B1 (en) 2009-11-11 2018-04-04 Alliance for Sustainable Energy, LLC Wet-chemical method for producing a black silicon substrate
US8828765B2 (en) 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
WO2012061266A2 (en) 2010-11-01 2012-05-10 The Board Of Trustees Of The University Of Illinois Method of forming an array of nanostructures
CN102157608A (en) * 2010-12-30 2011-08-17 中国科学院物理研究所 Method for reducing surface light reflectivity of silicon chip
DE112012000576B4 (en) 2011-01-26 2023-06-07 Sumco Corp. Method of manufacturing a solar cell wafer, a solar cell, and a solar cell module
US11251318B2 (en) 2011-03-08 2022-02-15 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
TWI562395B (en) * 2011-05-25 2016-12-11 Agency Science Tech & Res Method of forming nanostructures on a substrate and use of the same
TWI453927B (en) 2011-06-29 2014-09-21 Ind Tech Res Inst Multi-reflection structure and photo-electric device
JP6500018B2 (en) * 2013-11-05 2019-04-10 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Metal oxide fixed graphene and carbon nanotube hybrid foam
CN104393114A (en) * 2014-11-17 2015-03-04 中国电子科技集团公司第四十八研究所 Preparation method of polycrystalline black silicon of micro-nano composite suede structure
CN106711240B (en) * 2016-11-14 2018-06-05 华南师范大学 A kind of preparation method of translucent solar cell
CN109103301B (en) * 2018-08-30 2020-07-07 鲁东大学 Preparation method of polycrystalline silicon surface micro-nano composite structure
CN110729379B (en) * 2019-10-16 2021-05-04 哈尔滨工业大学 Preparation method of black silicon substrate with ultralow-reflectivity micro-nano composite structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
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US4229233A (en) * 1979-02-05 1980-10-21 International Business Machines Corporation Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching
US4478209A (en) * 1982-06-30 1984-10-23 Guarnieri C Richard Radiant energy collector having plasma-textured polyimide exposed surface
JP2000022185A (en) * 1998-07-03 2000-01-21 Sharp Corp Solar cell and its manufacture

Also Published As

Publication number Publication date
ATE393479T1 (en) 2008-05-15
EP1316115A2 (en) 2003-06-04
EP1316115B1 (en) 2008-04-23
US6329296B1 (en) 2001-12-11
WO2002013279A3 (en) 2003-04-03
DE60133749D1 (en) 2008-06-05
JP3855105B2 (en) 2006-12-06
JP2004506330A (en) 2004-02-26
WO2002013279A2 (en) 2002-02-14

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