ATE391926T1 - Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen - Google Patents

Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen

Info

Publication number
ATE391926T1
ATE391926T1 AT03713598T AT03713598T ATE391926T1 AT E391926 T1 ATE391926 T1 AT E391926T1 AT 03713598 T AT03713598 T AT 03713598T AT 03713598 T AT03713598 T AT 03713598T AT E391926 T1 ATE391926 T1 AT E391926T1
Authority
AT
Austria
Prior art keywords
testing
methods
well
circuit
integrated circuit
Prior art date
Application number
AT03713598T
Other languages
English (en)
Inventor
Anne Gattiker
David Grosch
Marc Knox
Franco Motika
Phil Nigh
Horn Jody Van
Paul Zuchowski
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE391926T1 publication Critical patent/ATE391926T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G01R31/3008—Quiescent current [IDDQ] test or leakage current test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AT03713598T 2003-02-20 2003-02-20 Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen ATE391926T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/005314 WO2004077081A1 (en) 2003-02-20 2003-02-20 Integrated circuit testing methods using well bias modification

Publications (1)

Publication Number Publication Date
ATE391926T1 true ATE391926T1 (de) 2008-04-15

Family

ID=32925329

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03713598T ATE391926T1 (de) 2003-02-20 2003-02-20 Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen

Country Status (8)

Country Link
US (2) US7400162B2 (de)
EP (1) EP1595154B1 (de)
CN (1) CN100495056C (de)
AT (1) ATE391926T1 (de)
AU (1) AU2003217641A1 (de)
DE (1) DE60320314T2 (de)
TW (1) TWI273261B (de)
WO (1) WO2004077081A1 (de)

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US7274247B2 (en) 2005-04-04 2007-09-25 Freescale Semiconductor, Inc. System, method and program product for well-bias set point adjustment
JP2008153415A (ja) * 2006-12-18 2008-07-03 Renesas Technology Corp 半導体集積回路およびその製造方法
US7679978B1 (en) * 2007-07-11 2010-03-16 Sun Microsystems, Inc. Scheme for screening weak memory cell
US20090046519A1 (en) * 2007-08-15 2009-02-19 Texas Instruments Incorporated Method, device and system for configuring a static random access memory cell for improved performance
US7797596B2 (en) * 2007-09-26 2010-09-14 Oracle America, Inc. Method for monitoring and adjusting circuit performance
US7538569B2 (en) * 2007-10-02 2009-05-26 Analog Devices, Inc. Integrated circuits with programmable well biasing
WO2010104428A1 (en) * 2009-03-10 2010-09-16 Saab Ab Built-in test system with prognostic capability and method
US8362794B2 (en) * 2009-07-23 2013-01-29 International Business Machines Corporation Method and system for assessing reliability of integrated circuit
US8215177B2 (en) * 2009-11-16 2012-07-10 Freescale Semiconductor, Inc. Apparatus and methods for applying stress-induced offset compensation in sensor devices
US8723592B2 (en) * 2011-08-12 2014-05-13 Nxp B.V. Adjustable body bias circuit
US9287253B2 (en) * 2011-11-04 2016-03-15 Synopsys, Inc. Method and apparatus for floating or applying voltage to a well of an integrated circuit
US9285417B2 (en) * 2013-01-02 2016-03-15 Globalfoundries Inc. Low-voltage IC test for defect screening
CN103913694B (zh) * 2013-01-09 2018-03-27 恩智浦美国有限公司 用于检测集成电路的劣化的监视系统
US9437874B2 (en) 2013-06-18 2016-09-06 Samsung Sdi Co., Ltd. Active material for a lithium secondary battery, method of manufacturing the same, electrode including the active material, and lithium secondary battery including the electrode
CN104617005B (zh) * 2013-11-05 2017-09-22 中芯国际集成电路制造(上海)有限公司 沟道区应变的测量方法
CN105895619B (zh) 2015-01-23 2021-06-25 恩智浦美国有限公司 用于监测集成电路上金属退化的电路
US10746781B2 (en) 2015-05-05 2020-08-18 Ariel-University Research And Development Company Ltd. Ring oscillator test circuit
FR3042891B1 (fr) * 2015-10-22 2018-03-23 Stmicroelectronics (Rousset) Sas Puce electronique securisee
US9970980B2 (en) * 2016-08-26 2018-05-15 Infineon Technologies Ag Test circuit for stress leakage measurements
US10158354B2 (en) * 2017-02-10 2018-12-18 Silicon Laboratories Inc. Apparatus with electronic circuitry having reduced leakage current and associated methods
CN107229008B (zh) * 2017-05-22 2019-05-21 西安电子科技大学 一种cmos反相器mos阈值电压的测量方法
US10491208B2 (en) * 2018-02-05 2019-11-26 Electronics And Telecommunications Research Institute Semiconductor device including CMOS circuit and operation method thereof
CN110634529B (zh) * 2018-06-21 2021-05-18 华邦电子股份有限公司 检测方法以及存储器装置
US11598794B2 (en) 2020-07-22 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Power detection circuit
CN115266745B (zh) * 2022-06-17 2026-02-24 长鑫存储技术有限公司 一种缺陷检测方法、装置以及设备和存储介质
CN118962417B (zh) * 2024-07-30 2025-04-29 东莞市德字电子有限公司 一种用于储能电源的线路板智能测试管理系统

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Also Published As

Publication number Publication date
US7400162B2 (en) 2008-07-15
US20080211530A1 (en) 2008-09-04
TW200528738A (en) 2005-09-01
CN100495056C (zh) 2009-06-03
DE60320314D1 (de) 2008-05-21
EP1595154B1 (de) 2008-04-09
DE60320314T2 (de) 2009-06-25
TWI273261B (en) 2007-02-11
US7759960B2 (en) 2010-07-20
EP1595154A1 (de) 2005-11-16
WO2004077081A1 (en) 2004-09-10
US20060071653A1 (en) 2006-04-06
EP1595154A4 (de) 2006-05-10
AU2003217641A1 (en) 2004-09-17
CN1742209A (zh) 2006-03-01

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