ATE391926T1 - Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen - Google Patents
Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungenInfo
- Publication number
- ATE391926T1 ATE391926T1 AT03713598T AT03713598T ATE391926T1 AT E391926 T1 ATE391926 T1 AT E391926T1 AT 03713598 T AT03713598 T AT 03713598T AT 03713598 T AT03713598 T AT 03713598T AT E391926 T1 ATE391926 T1 AT E391926T1
- Authority
- AT
- Austria
- Prior art keywords
- testing
- methods
- well
- circuit
- integrated circuit
- Prior art date
Links
- 238000012986 modification Methods 0.000 title 1
- 230000004048 modification Effects 0.000 title 1
- 238000010998 test method Methods 0.000 title 1
- 238000012360 testing method Methods 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000003745 diagnosis Methods 0.000 abstract 1
- 238000009662 stress testing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G01R31/3004—Current or voltage test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G01R31/3004—Current or voltage test
- G01R31/3008—Quiescent current [IDDQ] test or leakage current test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
- G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2003/005314 WO2004077081A1 (en) | 2003-02-20 | 2003-02-20 | Integrated circuit testing methods using well bias modification |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE391926T1 true ATE391926T1 (de) | 2008-04-15 |
Family
ID=32925329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03713598T ATE391926T1 (de) | 2003-02-20 | 2003-02-20 | Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen |
Country Status (8)
Country | Link |
---|---|
US (2) | US7400162B2 (de) |
EP (1) | EP1595154B1 (de) |
CN (1) | CN100495056C (de) |
AT (1) | ATE391926T1 (de) |
AU (1) | AU2003217641A1 (de) |
DE (1) | DE60320314T2 (de) |
TW (1) | TWI273261B (de) |
WO (1) | WO2004077081A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE391926T1 (de) * | 2003-02-20 | 2008-04-15 | Ibm | Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen |
JP4318511B2 (ja) * | 2003-08-26 | 2009-08-26 | 三洋電機株式会社 | 昇圧回路 |
JP4846223B2 (ja) * | 2004-10-12 | 2011-12-28 | 株式会社アドバンテスト | 試験装置および試験方法 |
US7274247B2 (en) | 2005-04-04 | 2007-09-25 | Freescale Semiconductor, Inc. | System, method and program product for well-bias set point adjustment |
JP2008153415A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体集積回路およびその製造方法 |
US7679978B1 (en) * | 2007-07-11 | 2010-03-16 | Sun Microsystems, Inc. | Scheme for screening weak memory cell |
US20090046519A1 (en) * | 2007-08-15 | 2009-02-19 | Texas Instruments Incorporated | Method, device and system for configuring a static random access memory cell for improved performance |
US7797596B2 (en) * | 2007-09-26 | 2010-09-14 | Oracle America, Inc. | Method for monitoring and adjusting circuit performance |
US7538569B2 (en) * | 2007-10-02 | 2009-05-26 | Analog Devices, Inc. | Integrated circuits with programmable well biasing |
WO2010104428A1 (en) * | 2009-03-10 | 2010-09-16 | Saab Ab | Built-in test system with prognostic capability and method |
US8362794B2 (en) * | 2009-07-23 | 2013-01-29 | International Business Machines Corporation | Method and system for assessing reliability of integrated circuit |
US8215177B2 (en) * | 2009-11-16 | 2012-07-10 | Freescale Semiconductor, Inc. | Apparatus and methods for applying stress-induced offset compensation in sensor devices |
US8723592B2 (en) * | 2011-08-12 | 2014-05-13 | Nxp B.V. | Adjustable body bias circuit |
US9287253B2 (en) * | 2011-11-04 | 2016-03-15 | Synopsys, Inc. | Method and apparatus for floating or applying voltage to a well of an integrated circuit |
US9285417B2 (en) * | 2013-01-02 | 2016-03-15 | Globalfoundries Inc. | Low-voltage IC test for defect screening |
CN103913694B (zh) * | 2013-01-09 | 2018-03-27 | 恩智浦美国有限公司 | 用于检测集成电路的劣化的监视系统 |
US9437874B2 (en) | 2013-06-18 | 2016-09-06 | Samsung Sdi Co., Ltd. | Active material for a lithium secondary battery, method of manufacturing the same, electrode including the active material, and lithium secondary battery including the electrode |
CN104617005B (zh) * | 2013-11-05 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | 沟道区应变的测量方法 |
CN105895619B (zh) | 2015-01-23 | 2021-06-25 | 恩智浦美国有限公司 | 用于监测集成电路上金属退化的电路 |
CN107889525B (zh) * | 2015-05-05 | 2021-10-15 | 阿里埃勒大学研究与发展有限公司 | 环形振荡器试验电路 |
CN105911446B (zh) * | 2016-04-12 | 2018-09-04 | 重庆大学 | Igbt老化状态监测方法及装置 |
US9970980B2 (en) * | 2016-08-26 | 2018-05-15 | Infineon Technologies Ag | Test circuit for stress leakage measurements |
US10158354B2 (en) * | 2017-02-10 | 2018-12-18 | Silicon Laboratories Inc. | Apparatus with electronic circuitry having reduced leakage current and associated methods |
CN107229008B (zh) * | 2017-05-22 | 2019-05-21 | 西安电子科技大学 | 一种cmos反相器mos阈值电压的测量方法 |
US10491208B2 (en) * | 2018-02-05 | 2019-11-26 | Electronics And Telecommunications Research Institute | Semiconductor device including CMOS circuit and operation method thereof |
CN110634529B (zh) * | 2018-06-21 | 2021-05-18 | 华邦电子股份有限公司 | 检测方法以及存储器装置 |
US11598794B2 (en) | 2020-07-22 | 2023-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power detection circuit |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0344580A (ja) | 1989-07-12 | 1991-02-26 | Nec Corp | 半導体装置用バイアステスト基板 |
US5371457A (en) | 1991-02-12 | 1994-12-06 | Lipp; Robert J. | Method and apparatus to test for current in an integrated circuit |
CA2073886A1 (en) | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
CA2073916A1 (en) | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
US5392293A (en) | 1993-02-26 | 1995-02-21 | At&T Corp. | Built-in current sensor for IDDQ testing |
WO1995016923A1 (en) | 1993-12-16 | 1995-06-22 | Philips Electronics N.V. | Separate iddq-testing of signal path and bias path in an ic |
US5986461A (en) | 1996-09-17 | 1999-11-16 | Intel Corporation | UV methods for screening open circuit defects in CMOS integrated circuits |
JP3641511B2 (ja) * | 1995-06-16 | 2005-04-20 | 株式会社ルネサステクノロジ | 半導体装置 |
US5880593A (en) | 1995-08-30 | 1999-03-09 | Micron Technology, Inc. | On-chip substrate regulator test mode |
US6144214A (en) * | 1995-11-15 | 2000-11-07 | University Of South Florida | Method and apparatus for use in IDDQ integrated circuit testing |
US5889408A (en) | 1996-06-27 | 1999-03-30 | Intel Corporation | Delta IDDQ testing |
TW382670B (en) | 1996-11-21 | 2000-02-21 | Hitachi Ltd | Low power processor |
JP3206502B2 (ja) | 1997-07-30 | 2001-09-10 | 日本電気株式会社 | 半導体集積回路のテスト方法 |
US6137301A (en) | 1998-05-11 | 2000-10-24 | Vanguard International Semiconductor Company | EPROM used as a voltage monitor for semiconductor burn-in |
US6239605B1 (en) | 1998-09-29 | 2001-05-29 | Intel Corporation | Method to perform IDDQ testing in the presence of high background leakage current |
US6330697B1 (en) | 1999-04-20 | 2001-12-11 | International Business Machines Corporation | Apparatus and method for performing a defect leakage screen test for memory devices |
EP1085333B1 (de) * | 1999-09-14 | 2005-07-13 | STMicroelectronics S.r.l. | Verfahren zur ruhestrombestimmung |
US6301168B1 (en) * | 2000-08-23 | 2001-10-09 | Motorola, Inc. | CMOS cell and circuit design for improved IDDQ testing |
US6621325B2 (en) * | 2001-09-18 | 2003-09-16 | Xilinx, Inc. | Structures and methods for selectively applying a well bias to portions of a programmable device |
ATE391926T1 (de) * | 2003-02-20 | 2008-04-15 | Ibm | Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen |
US6900656B1 (en) * | 2003-11-10 | 2005-05-31 | Texas Instruments Incorporated | Method of testing an integrated circuit and an integrated circuit test apparatus |
US7060566B2 (en) * | 2004-06-22 | 2006-06-13 | Infineon Technologies Ag | Standby current reduction over a process window with a trimmable well bias |
US7274247B2 (en) * | 2005-04-04 | 2007-09-25 | Freescale Semiconductor, Inc. | System, method and program product for well-bias set point adjustment |
-
2003
- 2003-02-20 AT AT03713598T patent/ATE391926T1/de not_active IP Right Cessation
- 2003-02-20 EP EP03713598A patent/EP1595154B1/de not_active Expired - Lifetime
- 2003-02-20 CN CNB038260093A patent/CN100495056C/zh not_active Expired - Fee Related
- 2003-02-20 WO PCT/US2003/005314 patent/WO2004077081A1/en not_active Application Discontinuation
- 2003-02-20 DE DE60320314T patent/DE60320314T2/de not_active Expired - Lifetime
- 2003-02-20 AU AU2003217641A patent/AU2003217641A1/en not_active Abandoned
- 2003-02-20 US US10/539,247 patent/US7400162B2/en not_active Expired - Fee Related
-
2004
- 2004-02-20 TW TW093104347A patent/TWI273261B/zh not_active IP Right Cessation
-
2008
- 2008-04-16 US US12/103,906 patent/US7759960B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI273261B (en) | 2007-02-11 |
CN1742209A (zh) | 2006-03-01 |
WO2004077081A1 (en) | 2004-09-10 |
EP1595154A4 (de) | 2006-05-10 |
EP1595154B1 (de) | 2008-04-09 |
US7759960B2 (en) | 2010-07-20 |
AU2003217641A1 (en) | 2004-09-17 |
CN100495056C (zh) | 2009-06-03 |
US20060071653A1 (en) | 2006-04-06 |
DE60320314T2 (de) | 2009-06-25 |
DE60320314D1 (de) | 2008-05-21 |
EP1595154A1 (de) | 2005-11-16 |
TW200528738A (en) | 2005-09-01 |
US7400162B2 (en) | 2008-07-15 |
US20080211530A1 (en) | 2008-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |