ATE387520T1 - Vorrichtung zur oberflächenmodifizierung von polymer-, metall- und keramikmaterialien unter verwendung eines ionenstrahls - Google Patents

Vorrichtung zur oberflächenmodifizierung von polymer-, metall- und keramikmaterialien unter verwendung eines ionenstrahls

Info

Publication number
ATE387520T1
ATE387520T1 AT98959256T AT98959256T ATE387520T1 AT E387520 T1 ATE387520 T1 AT E387520T1 AT 98959256 T AT98959256 T AT 98959256T AT 98959256 T AT98959256 T AT 98959256T AT E387520 T1 ATE387520 T1 AT E387520T1
Authority
AT
Austria
Prior art keywords
ion
chamber
ion beam
surface modification
polymer
Prior art date
Application number
AT98959256T
Other languages
English (en)
Inventor
Hyung Jung
Won Choi
Jung Cho
Seok Koh
Original Assignee
Korea Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Inst Sci & Tech filed Critical Korea Inst Sci & Tech
Application granted granted Critical
Publication of ATE387520T1 publication Critical patent/ATE387520T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B19/00—Treatment of textile materials by liquids, gases or vapours, not provided for in groups D06B1/00 - D06B17/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338—Changing chemical properties of treated surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Textile Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
AT98959256T 1997-12-05 1998-12-04 Vorrichtung zur oberflächenmodifizierung von polymer-, metall- und keramikmaterialien unter verwendung eines ionenstrahls ATE387520T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970066184A KR19990047679A (ko) 1997-12-05 1997-12-05 이온 빔을 이용한 재료의 표면 처리 장치

Publications (1)

Publication Number Publication Date
ATE387520T1 true ATE387520T1 (de) 2008-03-15

Family

ID=19526515

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98959256T ATE387520T1 (de) 1997-12-05 1998-12-04 Vorrichtung zur oberflächenmodifizierung von polymer-, metall- und keramikmaterialien unter verwendung eines ionenstrahls

Country Status (9)

Country Link
US (2) US6319326B1 (de)
EP (2) EP1036210B1 (de)
JP (1) JP2001526323A (de)
KR (2) KR19990047679A (de)
CN (2) CN100351422C (de)
AT (1) ATE387520T1 (de)
AU (1) AU1509499A (de)
DE (1) DE69839189T2 (de)
WO (1) WO1999029922A1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682387B2 (ja) * 1999-05-31 2011-05-11 ソニー株式会社 絶縁物の表面処理方法
KR100372851B1 (ko) * 2000-08-04 2003-02-19 주식회사 피앤아이 이온빔보조반응을 이용한 튜브 내벽의 친수성 표면처리방법 및 장치
AUPR515301A0 (en) * 2001-05-22 2001-06-14 Commonwealth Scientific And Industrial Research Organisation Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture
US6439108B1 (en) * 2002-03-25 2002-08-27 Eupa International Corporation Grill device having a space adjusting unit to adjust a space between an upper grill unit and a lower grill unit
EP1507883A2 (de) * 2002-05-06 2005-02-23 Guardian Industries Corp. Ionenstrahlquelle(n) enthaltende zerstäubung-beschichtungsvorrichtung und entsprechendes verfahren
DE10234614B3 (de) * 2002-07-24 2004-03-04 Fractal Ag Verfahren zur Bearbeitung von Trägermaterial durch Schwerionenbestrahlung und nachfolgenden Ätzprozess
DE10248507A1 (de) * 2002-10-11 2004-04-22 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren und Vorrichtung zur Fehlerkorrektur von Multiplex-Signalen
US6988463B2 (en) * 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
KR20040046571A (ko) * 2002-11-27 2004-06-05 주식회사 피앤아이 이온빔을 이용한 재료의 표면 처리 장치
KR100514952B1 (ko) * 2003-01-15 2005-09-14 주식회사 피앤아이 씨앗층과 벌크층의 성막 시퀀스 방법을 이용한 인듐 주석산화물 박막 형성 방법
US7531205B2 (en) * 2003-06-23 2009-05-12 Superpower, Inc. High throughput ion beam assisted deposition (IBAD)
US7421973B2 (en) * 2003-11-06 2008-09-09 Axcelis Technologies, Inc. System and method for performing SIMOX implants using an ion shower
US7748344B2 (en) * 2003-11-06 2010-07-06 Axcelis Technologies, Inc. Segmented resonant antenna for radio frequency inductively coupled plasmas
JP2008505842A (ja) 2004-07-12 2008-02-28 日本板硝子株式会社 低保守コーティング
TWI287816B (en) * 2004-07-22 2007-10-01 Asia Optical Co Inc Improved ion source with particular grid assembly
US7749364B2 (en) * 2004-09-03 2010-07-06 Cardinal Cg Company Coater having interrupted conveyor system
US7842435B2 (en) * 2004-11-01 2010-11-30 Gm Global Technology Operations, Inc. Fuel cell water management enhancement method
WO2006080968A2 (en) * 2004-11-15 2006-08-03 Cardinal Cg Company Methods and equipment for depositing coatings having sequenced structures
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
KR100732883B1 (ko) * 2005-07-12 2007-06-29 주식회사 모젬 고경도 코팅층을 가진 무선단말기용 외장부품 제조방법
KR100727695B1 (ko) * 2005-11-30 2007-06-13 동부일렉트로닉스 주식회사 이온주입공정의 감광제 차단능력 모니터링 방법
US7781377B2 (en) * 2005-12-28 2010-08-24 Superpower, Inc. Anti-epitaxial film in a superconducting article and related articles, devices and systems
US7445808B2 (en) * 2005-12-28 2008-11-04 Superpower, Inc. Method of forming a superconducting article
WO2007121211A2 (en) 2006-04-11 2007-10-25 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
WO2007124291A2 (en) 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
GB2438241A (en) * 2006-05-16 2007-11-21 Secretary Trade Ind Brit Machining of microstructures
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
WO2008100330A2 (en) * 2006-07-26 2008-08-21 President And Fellows Of Harvard College Surface modification of polymer surface using ion beam irradiation
JP2009010079A (ja) * 2007-06-27 2009-01-15 Canon Inc 露光装置
WO2009036263A2 (en) 2007-09-14 2009-03-19 Cardinal Cg Company Low-maintenance coating technology
CN101994087B (zh) * 2009-08-14 2013-04-24 鸿富锦精密工业（深圳）有限公司 蒸镀装置
WO2011049477A1 (en) * 2009-10-23 2011-04-28 Inano Limited Method for modifying surface characteristics of materials and apparatus
US10285112B2 (en) * 2010-07-08 2019-05-07 Peking University Data transmission in mobile ad-hoc network
TWI477646B (zh) * 2010-08-09 2015-03-21 Hon Hai Prec Ind Co Ltd 化學氣相沉積設備
KR101915753B1 (ko) * 2010-10-21 2018-11-07 삼성디스플레이 주식회사 이온 주입 시스템 및 이를 이용한 이온 주입 방법
FR2973811A1 (fr) * 2011-04-08 2012-10-12 Valeo Systemes Dessuyage Installation pour le traitement par bombardement ionique de deux surfaces opposees
CN104955651B (zh) * 2013-01-30 2017-05-24 柯尼卡美能达株式会社 液滴排出头基板以及液滴排出头的制造方法
JP5753308B1 (ja) * 2014-10-31 2015-07-22 株式会社ジーエル・マテリアルズホールディングス イオンビームを用いた高分子表面改質法及びその装置
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology
EP3366804B1 (de) * 2017-02-22 2022-05-11 Satisloh AG Vakuumbeschichtungsvorrichtung zur vakuumbeschichtung von substraten, insbesondere von brillenlinsen
CN109957752B (zh) * 2017-12-26 2022-10-28 佳能特机株式会社 基板处理装置及其控制方法、成膜装置、电子零件的制造方法
JP6567119B1 (ja) * 2018-03-27 2019-08-28 キヤノントッキ株式会社 基板処理装置及びその制御方法、成膜装置、電子部品の製造方法
DE112019000682B4 (de) 2018-02-06 2023-06-29 Canon Anelva Corporation Substratbearbeitungsvorrichtung und Substratbearbeitungsverfahren
KR20210094118A (ko) 2018-12-17 2021-07-28 어플라이드 머티어리얼스, 인코포레이티드 광학 디바이스 제작을 위한 이온 빔 소스
EP3900020A4 (de) * 2018-12-17 2022-12-28 Applied Materials, Inc. Verfahren zur herstellung von vorrichtungen auf einem substrat
KR102507701B1 (ko) * 2019-02-28 2023-03-09 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
CN111421144B (zh) * 2020-03-27 2021-11-19 西安交通大学 一种抗水腐蚀的难熔金属钼表面处理方法
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法
CN113073437B (zh) * 2021-04-06 2023-10-13 武汉纺织大学 功能纱线的界面涂覆改性装置及涂覆改性方法
KR20240022110A (ko) * 2022-08-11 2024-02-20 (주)라드피온 고분자 재료의 표면 전기전도도 향상 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466258A (en) * 1982-01-06 1984-08-21 Sando Iron Works Co., Ltd. Apparatus for low-temperature plasma treatment of a textile product
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
JPS61163270A (ja) 1985-01-12 1986-07-23 Nissin Electric Co Ltd イオン蒸着薄膜形成装置
JPS62287068A (ja) * 1986-06-06 1987-12-12 Nissin Electric Co Ltd イオンビ−ム蒸着装置
JPH01195274A (ja) * 1988-01-29 1989-08-07 Nippon Steel Corp 薄膜の連続形成装置
JPH06104900B2 (ja) * 1988-03-10 1994-12-21 松下電工株式会社 真空蒸着方法及び装置
US4889609A (en) * 1988-09-06 1989-12-26 Ovonic Imaging Systems, Inc. Continuous dry etching system
JPH0686657B2 (ja) * 1989-09-11 1994-11-02 松下電工株式会社 薄膜形成装置
JP2811820B2 (ja) * 1989-10-30 1998-10-15 株式会社ブリヂストン シート状物の連続表面処理方法及び装置
JPH0499173A (ja) * 1990-08-07 1992-03-31 Nec Corp スパッタリング装置
US5783641A (en) * 1995-04-19 1998-07-21 Korea Institute Of Science And Technology Process for modifying surfaces of polymers, and polymers having surfaces modified by such process
JPH0991667A (ja) * 1995-09-28 1997-04-04 Kao Corp 磁気記録媒体

Also Published As

Publication number Publication date
DE69839189D1 (de) 2008-04-10
WO1999029922A1 (en) 1999-06-17
US6319326B1 (en) 2001-11-20
US6841789B2 (en) 2005-01-11
CN1280631A (zh) 2001-01-17
WO1999029922A8 (en) 1999-09-30
CN100351422C (zh) 2007-11-28
KR19990047679A (ko) 1999-07-05
EP1296353A3 (de) 2008-05-07
EP1296353A2 (de) 2003-03-26
CN1227385C (zh) 2005-11-16
KR100329810B1 (ko) 2002-03-25
DE69839189T2 (de) 2009-03-26
AU1509499A (en) 1999-06-28
CN1619008A (zh) 2005-05-25
JP2001526323A (ja) 2001-12-18
US20020014597A1 (en) 2002-02-07
KR20010032692A (ko) 2001-04-25
EP1036210A1 (de) 2000-09-20
EP1036210B1 (de) 2008-02-27

Similar Documents

Publication Publication Date Title
DE69839189D1 (de) Vorrichtung zur oberflächenmodifizierung von polymer-, metall- und keramikmaterialien unter verwendung eines ionenstrahls
TW429395B (en) Microchamber
DK1293559T3 (da) Gasdrevet genindförselsinstrument
ATE181116T1 (de) Verfahren und vorrichtung zur behandlung von substratoberflächen
ATE207806T1 (de) Verfahren zur erhöhung der benetzbarkeit der oberfläche von werkstücken
KR930701632A (ko) 기판재료를 코팅하는 방법 및 장치
EP1179381A3 (de) Oberflächenbehandlungsvorrichtung
GB8821944D0 (en) Method & apparatus for forming surface of workpiece
DE59104388D1 (de) Verfahren zur Herstellung einer Diamantschicht und Anlage hierfür.
IE830747L (en) Plasma treatment process
CA2348277A1 (en) Ablated laser feature shape reproduction control
TW357392B (en) Method and apparatus for removal of excessive material from perimeter of the substrate and method of application using the apparatus
ATE25070T1 (de) Verfahren zum beruehrungslosen abtragen von material von der oberflaeche eines glasgegenstandes und vorrichtung zur durchfuehrung des verfahrens.
AU2933189A (en) Procedure and apparatus for the coating of materials by means of a pulsating plasma beam
EP0384754A3 (de) Teilvakuumgerät und -verfahren
DK0861300T3 (da) Varmebehandling af carbonmaterialer
WO2002075747A3 (en) Electron beam irradiation apparatus
ATE81532T1 (de) Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung.
CA2099685A1 (en) Focused Ion Beam Implantation Apparatus
TR200002291T2 (tr) Bir malzemenin ışınlanması işlemi.
DE59609723D1 (de) Verfahren und Vorrichtung zum zerstörungsfreien Prüfen von Werkstücken
GR3034871T3 (en) Method and apparatus for cleaning a metal substrate
DE3862134D1 (de) Vorrichtung und verfahren zum herstellen und aufbringen von schaumbitumen, verwendung bei oberflaechenbehandlung.
FI963718A (fi) Menetelmä ja laite puupinnan muodostamiseksi
ATE146010T1 (de) Vorrichtung und verfahren zum verdampfen von material im vakuum sowie anwendung des verfahrens

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties