ATE378681T1 - Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung - Google Patents
Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnungInfo
- Publication number
- ATE378681T1 ATE378681T1 AT02798773T AT02798773T ATE378681T1 AT E378681 T1 ATE378681 T1 AT E378681T1 AT 02798773 T AT02798773 T AT 02798773T AT 02798773 T AT02798773 T AT 02798773T AT E378681 T1 ATE378681 T1 AT E378681T1
- Authority
- AT
- Austria
- Prior art keywords
- magnetic
- memory arrangement
- layer
- amorphic
- ferri
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3204—Exchange coupling of amorphous multilayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0112124A FR2829868A1 (fr) | 2001-09-20 | 2001-09-20 | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE378681T1 true ATE378681T1 (de) | 2007-11-15 |
Family
ID=8867445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02798773T ATE378681T1 (de) | 2001-09-20 | 2002-09-19 | Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung |
Country Status (10)
Country | Link |
---|---|
US (1) | US7332781B2 (de) |
EP (1) | EP1430484B1 (de) |
JP (1) | JP4954445B2 (de) |
KR (1) | KR100902960B1 (de) |
CN (1) | CN100592419C (de) |
AT (1) | ATE378681T1 (de) |
AU (1) | AU2002362337A1 (de) |
DE (1) | DE60223573T2 (de) |
FR (1) | FR2829868A1 (de) |
WO (1) | WO2003025942A2 (de) |
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JP2005150482A (ja) * | 2003-11-18 | 2005-06-09 | Sony Corp | 磁気抵抗効果素子及び磁気メモリ装置 |
US7242045B2 (en) * | 2004-02-19 | 2007-07-10 | Grandis, Inc. | Spin transfer magnetic element having low saturation magnetization free layers |
FR2866750B1 (fr) | 2004-02-23 | 2006-04-21 | Centre Nat Rech Scient | Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture |
US6992359B2 (en) * | 2004-02-26 | 2006-01-31 | Grandis, Inc. | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
US20110140217A1 (en) * | 2004-02-26 | 2011-06-16 | Grandis, Inc. | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
US7611912B2 (en) * | 2004-06-30 | 2009-11-03 | Headway Technologies, Inc. | Underlayer for high performance magnetic tunneling junction MRAM |
JP4770144B2 (ja) * | 2004-09-10 | 2011-09-14 | ソニー株式会社 | 記憶素子 |
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FR2879349B1 (fr) * | 2004-12-15 | 2007-05-11 | Thales Sa | Dispositif a electronique de spin a commande par deplacement de parois induit par un courant de porteurs polarises en spin |
JP2006196687A (ja) * | 2005-01-13 | 2006-07-27 | Tdk Corp | 磁気メモリ |
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US7764537B2 (en) | 2007-04-05 | 2010-07-27 | Qualcomm Incorporated | Spin transfer torque magnetoresistive random access memory and design methods |
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US8031519B2 (en) | 2008-06-18 | 2011-10-04 | Crocus Technology S.A. | Shared line magnetic random access memory cells |
EP2375464B1 (de) | 2008-12-22 | 2014-09-10 | Fuji Electric Co., Ltd. | Magnetoresistives element und speicheranordnung damit |
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EP2249350B1 (de) | 2009-05-08 | 2012-02-01 | Crocus Technology | Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und niedrigem Schreibstrom |
EP2276034B1 (de) * | 2009-07-13 | 2016-04-27 | Crocus Technology S.A. | Selbstbezogene Magnetdirektzugriffsspeicherzelle |
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US8913350B2 (en) * | 2009-08-10 | 2014-12-16 | Grandis, Inc. | Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements |
US8385106B2 (en) * | 2009-09-11 | 2013-02-26 | Grandis, Inc. | Method and system for providing a hierarchical data path for spin transfer torque random access memory |
US8159866B2 (en) | 2009-10-30 | 2012-04-17 | Grandis, Inc. | Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories |
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US8891290B2 (en) | 2010-03-17 | 2014-11-18 | Samsung Electronics Co., Ltd. | Method and system for providing inverted dual magnetic tunneling junction elements |
KR101256598B1 (ko) * | 2011-02-10 | 2013-04-19 | 삼성전자주식회사 | 인접 비정질 또는 나노 크리스털 물질 층을 이용한 수직 자기 이방성 형성 자기 소자 및 그 제조 방법 |
WO2011149274A2 (ko) | 2010-05-26 | 2011-12-01 | 고려대학교 산학협력단 | 자기적으로 연결되고 수직 자기 이방성을 갖도록 하는 비정질 버퍼층을 가지는 자기 터널 접합 소자 |
US8546896B2 (en) | 2010-07-16 | 2013-10-01 | Grandis, Inc. | Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements |
US8374048B2 (en) | 2010-08-11 | 2013-02-12 | Grandis, Inc. | Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy |
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US8374020B2 (en) | 2010-10-29 | 2013-02-12 | Honeywell International Inc. | Reduced switching-energy magnetic elements |
US8399941B2 (en) | 2010-11-05 | 2013-03-19 | Grandis, Inc. | Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements |
US8482968B2 (en) * | 2010-11-13 | 2013-07-09 | International Business Machines Corporation | Non-volatile magnetic tunnel junction transistor |
US9478730B2 (en) | 2010-12-31 | 2016-10-25 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories |
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CN106460229B (zh) | 2014-04-02 | 2019-12-10 | F·纳塔利 | 掺杂的稀土氮化物材料和包含其的器件 |
JP6126565B2 (ja) | 2014-09-19 | 2017-05-10 | 株式会社東芝 | 磁気抵抗素子及び磁気メモリ |
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CN105428522B (zh) * | 2015-12-01 | 2018-07-20 | 中电海康集团有限公司 | 一种用于stt-mram的磁性隧道结 |
CN105514261B (zh) * | 2015-12-01 | 2018-07-20 | 中电海康集团有限公司 | 一种用于mram的磁性存储器件 |
CN105742483B (zh) * | 2016-03-07 | 2018-01-12 | 浙江理工大学 | 基于载流子调控金属绝缘转变温度的低温磁传感器及其制备方法 |
WO2019005923A1 (en) * | 2017-06-28 | 2019-01-03 | Wisconsin Alumni Research Foundation | MAGNETIC MEMORY DEVICES BASED ON 4D AND 5D TRANSITION METAL PEROVSKITES |
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GB2343308B (en) | 1998-10-30 | 2000-10-11 | Nikolai Franz Gregor Schwabe | Magnetic storage device |
JP2000285668A (ja) * | 1999-03-26 | 2000-10-13 | Univ Nagoya | 磁気メモリデバイス |
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EP1115164B1 (de) * | 2000-01-07 | 2005-05-25 | Sharp Kabushiki Kaisha | Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement |
JP3544638B2 (ja) * | 2000-02-02 | 2004-07-21 | シャープ株式会社 | 磁気抵抗効果素子およびそれを用いた磁気メモリ |
DE10113853B4 (de) * | 2000-03-23 | 2009-08-06 | Sharp K.K. | Magnetspeicherelement und Magnetspeicher |
US6269018B1 (en) * | 2000-04-13 | 2001-07-31 | International Business Machines Corporation | Magnetic random access memory using current through MTJ write mechanism |
US6853520B2 (en) * | 2000-09-05 | 2005-02-08 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US7035138B2 (en) * | 2000-09-27 | 2006-04-25 | Canon Kabushiki Kaisha | Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions |
-
2001
- 2001-09-20 FR FR0112124A patent/FR2829868A1/fr not_active Withdrawn
-
2002
- 2002-09-19 DE DE60223573T patent/DE60223573T2/de not_active Expired - Lifetime
- 2002-09-19 CN CN02818383A patent/CN100592419C/zh not_active Expired - Lifetime
- 2002-09-19 EP EP02798773A patent/EP1430484B1/de not_active Expired - Lifetime
- 2002-09-19 US US10/490,491 patent/US7332781B2/en not_active Expired - Lifetime
- 2002-09-19 KR KR1020047004005A patent/KR100902960B1/ko active IP Right Grant
- 2002-09-19 JP JP2003529474A patent/JP4954445B2/ja not_active Expired - Lifetime
- 2002-09-19 AT AT02798773T patent/ATE378681T1/de not_active IP Right Cessation
- 2002-09-19 AU AU2002362337A patent/AU2002362337A1/en not_active Abandoned
- 2002-09-19 WO PCT/FR2002/003210 patent/WO2003025942A2/fr active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2005503669A (ja) | 2005-02-03 |
DE60223573D1 (de) | 2007-12-27 |
FR2829868A1 (fr) | 2003-03-21 |
CN1556998A (zh) | 2004-12-22 |
KR100902960B1 (ko) | 2009-06-15 |
EP1430484B1 (de) | 2007-11-14 |
AU2002362337A1 (en) | 2003-04-01 |
WO2003025942A3 (fr) | 2003-11-20 |
CN100592419C (zh) | 2010-02-24 |
EP1430484A2 (de) | 2004-06-23 |
KR20040035824A (ko) | 2004-04-29 |
US7332781B2 (en) | 2008-02-19 |
WO2003025942A2 (fr) | 2003-03-27 |
JP4954445B2 (ja) | 2012-06-13 |
US20050040433A1 (en) | 2005-02-24 |
DE60223573T2 (de) | 2008-09-18 |
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