ATE364228T1 - Architketur, verfahren und schaltungen für speichervorrichtungen mit geringer leistungsaufnahme - Google Patents

Architketur, verfahren und schaltungen für speichervorrichtungen mit geringer leistungsaufnahme

Info

Publication number
ATE364228T1
ATE364228T1 AT00963517T AT00963517T ATE364228T1 AT E364228 T1 ATE364228 T1 AT E364228T1 AT 00963517 T AT00963517 T AT 00963517T AT 00963517 T AT00963517 T AT 00963517T AT E364228 T1 ATE364228 T1 AT E364228T1
Authority
AT
Austria
Prior art keywords
architecture
circuits
methods
approximately
providing
Prior art date
Application number
AT00963517T
Other languages
English (en)
Inventor
Keith Ford
Iulian Gradinariu
Bogdan Georgescu
Sean Mulholland
John Silver
Danny Rose
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Application granted granted Critical
Publication of ATE364228T1 publication Critical patent/ATE364228T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Electronic Switches (AREA)
  • Channel Selection Circuits, Automatic Tuning Circuits (AREA)
  • Power Sources (AREA)
AT00963517T 1999-09-17 2000-09-15 Architketur, verfahren und schaltungen für speichervorrichtungen mit geringer leistungsaufnahme ATE364228T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/398,735 US6163495A (en) 1999-09-17 1999-09-17 Architecture, method(s) and circuitry for low power memories

Publications (1)

Publication Number Publication Date
ATE364228T1 true ATE364228T1 (de) 2007-06-15

Family

ID=23576591

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00963517T ATE364228T1 (de) 1999-09-17 2000-09-15 Architketur, verfahren und schaltungen für speichervorrichtungen mit geringer leistungsaufnahme

Country Status (10)

Country Link
US (3) US6163495A (de)
EP (1) EP1214713B1 (de)
JP (1) JP5105680B2 (de)
KR (1) KR100765157B1 (de)
AT (1) ATE364228T1 (de)
AU (1) AU7492100A (de)
CA (1) CA2384862A1 (de)
DE (1) DE60035115T2 (de)
IL (2) IL148680A0 (de)
WO (1) WO2001020610A1 (de)

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US6163495A (en) 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories
US6530040B1 (en) * 1999-09-22 2003-03-04 Cypress Semiconductor Corp. Parallel test in asynchronous memory with single-ended output path
US6724681B2 (en) 2000-02-02 2004-04-20 Broadcom Corporation Asynchronously-resettable decoder with redundancy
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6535025B2 (en) 2000-02-02 2003-03-18 Broadcom Corp. Sense amplifier with offset cancellation and charge-share limited swing drivers
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6411557B2 (en) 2000-02-02 2002-06-25 Broadcom Corporation Memory architecture with single-port cell and dual-port (read and write) functionality
US7173867B2 (en) * 2001-02-02 2007-02-06 Broadcom Corporation Memory redundancy circuit techniques
US6937538B2 (en) * 2000-02-02 2005-08-30 Broadcom Corporation Asynchronously resettable decoder for a semiconductor memory
US6492844B2 (en) 2000-02-02 2002-12-10 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6611465B2 (en) 2000-02-02 2003-08-26 Broadcom Corporation Diffusion replica delay circuit
US6745354B2 (en) 2000-02-02 2004-06-01 Broadcom Corporation Memory redundancy implementation
US6414899B2 (en) 2000-02-02 2002-07-02 Broadcom Corporation Limited swing driver circuit
US6603712B2 (en) 2000-02-02 2003-08-05 Broadcom Corporation High precision delay measurement circuit
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
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JP4917767B2 (ja) * 2005-07-01 2012-04-18 パナソニック株式会社 半導体記憶装置
KR100700160B1 (ko) * 2005-08-23 2007-03-28 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 워드라인활성화 방법
DE102007007566B4 (de) * 2007-02-15 2012-08-23 Qimonda Ag Halbleiter-Bauelement-System, Speichermodul und Verfahren zum Betreiben eines Halbleiter-Bauelement-Systems
CN102859603A (zh) * 2010-04-27 2013-01-02 莫塞德技术公司 具有交替选择的相变存储阵列块
US8526227B2 (en) 2010-06-23 2013-09-03 Mosaid Technologies Incorporated Phase change memory word line driver
EP3092269A4 (de) 2014-01-10 2017-09-27 CommScope Connectivity Belgium BVBA Thermoplastische gelzusammensetzungen und verfahren zur herstellung davon

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US5872464A (en) * 1996-08-12 1999-02-16 Cypress Semiconductor Corp. Input buffer with stabilized trip points
US5968190A (en) 1996-10-31 1999-10-19 Cypress Semiconductor Corp. Redundancy method and circuit for self-repairing memory arrays
KR100240418B1 (ko) * 1996-12-31 2000-03-02 윤종용 반도체 독출 전용 메모리 및 그의 독출 방법
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US6163495A (en) * 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories

Also Published As

Publication number Publication date
CA2384862A1 (en) 2001-03-22
EP1214713A4 (de) 2004-12-22
EP1214713A1 (de) 2002-06-19
IL148680A (en) 2007-12-03
DE60035115T2 (de) 2008-01-31
JP2003509802A (ja) 2003-03-11
JP5105680B2 (ja) 2012-12-26
WO2001020610A1 (en) 2001-03-22
DE60035115D1 (de) 2007-07-19
KR100765157B1 (ko) 2007-10-15
KR20020035142A (ko) 2002-05-09
US6493283B1 (en) 2002-12-10
US6163495A (en) 2000-12-19
IL148680A0 (en) 2002-09-12
US20020191470A1 (en) 2002-12-19
EP1214713B1 (de) 2007-06-06
AU7492100A (en) 2001-04-17
US6674682B2 (en) 2004-01-06

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