ATE348389T1 - Segmentierte metall bitleitungen - Google Patents

Segmentierte metall bitleitungen

Info

Publication number
ATE348389T1
ATE348389T1 AT02766312T AT02766312T ATE348389T1 AT E348389 T1 ATE348389 T1 AT E348389T1 AT 02766312 T AT02766312 T AT 02766312T AT 02766312 T AT02766312 T AT 02766312T AT E348389 T1 ATE348389 T1 AT E348389T1
Authority
AT
Austria
Prior art keywords
memory cells
metal
bitlines
segments
segmented
Prior art date
Application number
AT02766312T
Other languages
English (en)
Inventor
Raul-Adrian Cernea
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE348389T1 publication Critical patent/ATE348389T1/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/24Bit-line control circuits

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT02766312T 2001-09-21 2002-09-18 Segmentierte metall bitleitungen ATE348389T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/960,586 US6552932B1 (en) 2001-09-21 2001-09-21 Segmented metal bitlines

Publications (1)

Publication Number Publication Date
ATE348389T1 true ATE348389T1 (de) 2007-01-15

Family

ID=25503353

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02766312T ATE348389T1 (de) 2001-09-21 2002-09-18 Segmentierte metall bitleitungen

Country Status (10)

Country Link
US (4) US6552932B1 (de)
EP (1) EP1430482B1 (de)
JP (1) JP4310189B2 (de)
KR (1) KR100914264B1 (de)
CN (1) CN100490001C (de)
AT (1) ATE348389T1 (de)
AU (1) AU2002330054A1 (de)
DE (1) DE60216782T2 (de)
TW (1) TW561584B (de)
WO (1) WO2003028033A2 (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6552932B1 (en) * 2001-09-21 2003-04-22 Sandisk Corporation Segmented metal bitlines
US6646914B1 (en) * 2002-03-12 2003-11-11 Advanced Micro Devices, Inc. Flash memory array architecture having staggered metal lines
US7027324B2 (en) * 2004-06-09 2006-04-11 Headway Technologies, Inc. Method and system for providing common read and write word lines for a segmented word line MRAM array
JP2008507805A (ja) * 2004-07-27 2008-03-13 ユニバーシティー オブ トロント 調整可能な磁気スイッチ
US20060262593A1 (en) * 2004-07-27 2006-11-23 Stephane Aouba Magnetic memory composition and method of manufacture
US7499303B2 (en) * 2004-09-24 2009-03-03 Integrated Device Technology, Inc. Binary and ternary non-volatile CAM
US7313023B2 (en) * 2005-03-11 2007-12-25 Sandisk Corporation Partition of non-volatile memory array to reduce bit line capacitance
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7526715B2 (en) * 2005-10-17 2009-04-28 Ramot At Tel Aviv University Ltd. Probabilistic error correction in multi-bit-per-cell flash memory
US7701756B2 (en) 2005-12-21 2010-04-20 Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
US7593264B2 (en) * 2006-01-09 2009-09-22 Macronix International Co., Ltd. Method and apparatus for programming nonvolatile memory
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
WO2007128738A1 (en) * 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터
US8518774B2 (en) * 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en) * 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) * 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8097504B2 (en) * 2007-06-26 2012-01-17 Sandisk Technologies Inc. Method for forming dual bit line metal layers for non-volatile memory
US8368137B2 (en) * 2007-06-26 2013-02-05 Sandisk Technologies Inc. Dual bit line metal layers for non-volatile memory
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
WO2009064619A1 (en) * 2007-11-16 2009-05-22 Rambus Inc. Apparatus and method for segmentation of a memory device
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) * 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US8130528B2 (en) * 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US7947543B2 (en) * 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US8027209B2 (en) 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
US7924630B2 (en) * 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8040744B2 (en) 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8319294B2 (en) * 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) * 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
KR20120006516A (ko) 2009-03-31 2012-01-18 마이크론 테크놀로지, 인크. 반도체 메모리 디바이스를 제공하기 위한 기술들
US8279650B2 (en) 2009-04-20 2012-10-02 Sandisk 3D Llc Memory system with data line switching scheme
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) * 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) * 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) * 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) * 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8576631B2 (en) * 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) * 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) * 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
KR20130007609A (ko) 2010-03-15 2013-01-18 마이크론 테크놀로지, 인크. 반도체 메모리 장치를 제공하기 위한 기술들
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US9013911B2 (en) * 2011-06-23 2015-04-21 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
JP6012263B2 (ja) * 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US8796778B2 (en) 2011-12-09 2014-08-05 Micron Technology, Inc. Apparatuses and methods for transposing select gates
US8760957B2 (en) 2012-03-27 2014-06-24 SanDisk Technologies, Inc. Non-volatile memory and method having a memory array with a high-speed, short bit-line portion
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US9484917B2 (en) 2012-12-18 2016-11-01 Intel Corporation Digital clamp for state retention
US9484888B2 (en) 2012-12-19 2016-11-01 Intel Corporation Linear resistor with high resolution and bandwidth
US8922252B2 (en) 2012-12-19 2014-12-30 Intel Corporation Threshold voltage dependent power-gate driver
DE112012007140T5 (de) 2012-12-27 2015-08-20 Intel Corporation SRAM-Bitleitungs- und Schreibunterstützungsgerät und Verfahren zum Verringern der dynamischen Leistung und des Spitzenstroms und Pegelumsetzer mit dualem Eingang
US9766678B2 (en) 2013-02-04 2017-09-19 Intel Corporation Multiple voltage identification (VID) power architecture, a digital synthesizable low dropout regulator, and apparatus for improving reliability of power gates
US9755660B2 (en) 2013-02-15 2017-09-05 Intel Corporation Apparatus for generating digital thermometer codes
US8847633B1 (en) 2013-03-08 2014-09-30 Intel Corporation Low voltage swing repeater
KR20150054225A (ko) * 2013-11-11 2015-05-20 삼성전자주식회사 로직 임베디드 불휘발성 메모리 장치
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
JP6545649B2 (ja) * 2016-09-16 2019-07-17 東芝メモリ株式会社 メモリデバイス
US10199095B1 (en) * 2017-09-01 2019-02-05 Globalfoundries Inc. Bit line strapping scheme for high density SRAM
US10614894B2 (en) 2018-01-12 2020-04-07 Sandisk Technologies Llc Select gates separation for improving performance in three-dimensional non-volatile memory
US11676917B2 (en) * 2020-11-24 2023-06-13 Micron Technology, Inc. Active protection circuits for semiconductor devices

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4730280A (en) * 1984-11-20 1988-03-08 Fujitsu Limited Semiconductor memory device having sense amplifiers with different driving abilities
JPS6353787A (ja) * 1986-08-22 1988-03-08 Fujitsu Ltd 半導体記憶装置
JP2543870B2 (ja) * 1986-09-30 1996-10-16 株式会社東芝 半導体記憶装置
JPH0713847B2 (ja) * 1987-03-10 1995-02-15 三菱電機株式会社 半導体記憶装置
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
EP0675502B1 (de) 1989-04-13 2005-05-25 SanDisk Corporation EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5270979A (en) 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5712180A (en) 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
KR100231404B1 (ko) * 1996-02-22 1999-11-15 가네꼬 히사시 다수의 값을 갖는 소형 반도체 메모리 디바이스
JPH09282891A (ja) * 1996-04-05 1997-10-31 Nec Corp 半導体装置
US5796671A (en) * 1996-03-01 1998-08-18 Wahlstrom; Sven E. Dynamic random access memory
US5682350A (en) * 1996-03-29 1997-10-28 Aplus Integrated Circuits, Inc. Flash memory with divided bitline
US5754469A (en) * 1996-06-14 1998-05-19 Macronix International Co., Ltd. Page mode floating gate memory device storing multiple bits per cell
JPH10320989A (ja) * 1997-05-16 1998-12-04 Toshiba Microelectron Corp 不揮発性半導体メモリ
US5963465A (en) 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US5917744A (en) * 1997-12-18 1999-06-29 Siemens Aktiengesellschaft Semiconductor memory having hierarchical bit line architecture with interleaved master bitlines
KR19990065216A (ko) * 1998-01-09 1999-08-05 윤종용 향상된 특성을 갖는 반도체 메모리 장치
TW419812B (en) * 1998-02-18 2001-01-21 Sanyo Electric Co Non-volatile semiconductor memory
US6091633A (en) 1999-08-09 2000-07-18 Sandisk Corporation Memory array architecture utilizing global bit lines shared by multiple cells
US6147910A (en) * 1999-08-31 2000-11-14 Macronix International Co., Ltd. Parallel read and verify for floating gate memory device
US6359305B1 (en) 1999-12-22 2002-03-19 Turbo Ic, Inc. Trench-isolated EEPROM flash in segmented bit line page architecture
US6515906B2 (en) * 2000-12-28 2003-02-04 Intel Corporation Method and apparatus for matched-reference sensing architecture for non-volatile memories
US6532172B2 (en) 2001-05-31 2003-03-11 Sandisk Corporation Steering gate and bit line segmentation in non-volatile memories
US6552932B1 (en) 2001-09-21 2003-04-22 Sandisk Corporation Segmented metal bitlines

Also Published As

Publication number Publication date
AU2002330054A1 (en) 2003-04-07
US6552932B1 (en) 2003-04-22
US20030206450A1 (en) 2003-11-06
EP1430482B1 (de) 2006-12-13
KR20040051587A (ko) 2004-06-18
US20050002232A1 (en) 2005-01-06
JP4310189B2 (ja) 2009-08-05
CN1556995A (zh) 2004-12-22
US6922358B2 (en) 2005-07-26
EP1430482A2 (de) 2004-06-23
DE60216782T2 (de) 2007-11-08
DE60216782D1 (de) 2007-01-25
WO2003028033A3 (en) 2003-10-30
US7158409B2 (en) 2007-01-02
JP2005505088A (ja) 2005-02-17
WO2003028033A2 (en) 2003-04-03
TW561584B (en) 2003-11-11
CN100490001C (zh) 2009-05-20
US20050232010A1 (en) 2005-10-20
US6856541B2 (en) 2005-02-15
KR100914264B1 (ko) 2009-08-27

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