ATE322084T1 - Kondensator mit variabler kapazität - Google Patents
Kondensator mit variabler kapazitätInfo
- Publication number
- ATE322084T1 ATE322084T1 AT01931828T AT01931828T ATE322084T1 AT E322084 T1 ATE322084 T1 AT E322084T1 AT 01931828 T AT01931828 T AT 01931828T AT 01931828 T AT01931828 T AT 01931828T AT E322084 T1 ATE322084 T1 AT E322084T1
- Authority
- AT
- Austria
- Prior art keywords
- zones
- type
- recesses
- regions
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Control Of Eletrric Generators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0005887A FR2808924B1 (fr) | 2000-05-09 | 2000-05-09 | Condenseur a capacite variable |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE322084T1 true ATE322084T1 (de) | 2006-04-15 |
Family
ID=8850021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01931828T ATE322084T1 (de) | 2000-05-09 | 2001-05-09 | Kondensator mit variabler kapazität |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6703681B2 (de) |
| EP (1) | EP1287564B1 (de) |
| JP (1) | JP4868683B2 (de) |
| AT (1) | ATE322084T1 (de) |
| AU (1) | AU2001258520A1 (de) |
| CA (1) | CA2409683C (de) |
| DE (1) | DE60118358T2 (de) |
| FR (1) | FR2808924B1 (de) |
| WO (1) | WO2001086729A1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157159A1 (en) * | 2006-12-28 | 2008-07-03 | International Business Machines Corporation | Highly tunable metal-on-semiconductor varactor |
| US7989922B2 (en) * | 2008-02-08 | 2011-08-02 | International Business Machines Corporation | Highly tunable metal-on-semiconductor trench varactor |
| CN102084488A (zh) * | 2008-06-13 | 2011-06-01 | 昆南诺股份有限公司 | 纳米结构mos电容器 |
| US8722503B2 (en) * | 2010-07-16 | 2014-05-13 | Texas Instruments Incorporated | Capacitors and methods of forming |
| US9318485B2 (en) * | 2012-08-10 | 2016-04-19 | Infineon Technologies Ag | Capacitor arrangements and method for manufacturing a capacitor arrangement |
| EP2999002A1 (de) * | 2014-09-18 | 2016-03-23 | Services Petroliers Schlumberger | Kondensatorzelle und Verfahren zu ihrer Herstellung |
| CN117238974A (zh) * | 2023-09-21 | 2023-12-15 | 扬州国宇电子有限公司 | 一种等差式多环区的超突变变容二极管及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1229093B (de) * | 1963-01-23 | 1966-11-24 | Basf Ag | Verfahren zur Herstellung von Hexahydropyrimidinderivaten |
| GB1439351A (en) * | 1972-06-02 | 1976-06-16 | Texas Instruments Inc | Capacitor |
| US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
| JPS5690566A (en) * | 1979-12-24 | 1981-07-22 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5816577A (ja) * | 1981-07-23 | 1983-01-31 | Clarion Co Ltd | 半導体装置 |
| JPS5933884A (ja) * | 1982-08-19 | 1984-02-23 | Matsushita Electronics Corp | 可変容量ダイオ−ド |
| DE19631389A1 (de) * | 1995-08-29 | 1997-03-06 | Hewlett Packard Co | Monolithischer spannungsvariabler Kondensator |
| JP3934352B2 (ja) * | 2000-03-31 | 2007-06-20 | Ｔｄｋ株式会社 | 積層型セラミックチップコンデンサとその製造方法 |
| US6484054B2 (en) * | 2000-06-12 | 2002-11-19 | Medtronic, Inc. | Deep trench semiconductor capacitors having reverse bias diodes for implantable medical devices |
-
2000
- 2000-05-09 FR FR0005887A patent/FR2808924B1/fr not_active Expired - Lifetime
-
2001
- 2001-05-09 WO PCT/FR2001/001401 patent/WO2001086729A1/fr active IP Right Grant
- 2001-05-09 AU AU2001258520A patent/AU2001258520A1/en not_active Abandoned
- 2001-05-09 JP JP2001582846A patent/JP4868683B2/ja not_active Expired - Fee Related
- 2001-05-09 CA CA2409683A patent/CA2409683C/en not_active Expired - Lifetime
- 2001-05-09 DE DE60118358T patent/DE60118358T2/de not_active Expired - Lifetime
- 2001-05-09 AT AT01931828T patent/ATE322084T1/de not_active IP Right Cessation
- 2001-05-09 US US10/275,787 patent/US6703681B2/en not_active Expired - Lifetime
- 2001-05-09 EP EP01931828A patent/EP1287564B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4868683B2 (ja) | 2012-02-01 |
| US20030183866A1 (en) | 2003-10-02 |
| WO2001086729A1 (fr) | 2001-11-15 |
| DE60118358D1 (de) | 2006-05-18 |
| EP1287564A1 (de) | 2003-03-05 |
| CA2409683C (en) | 2010-02-23 |
| CA2409683A1 (en) | 2001-11-15 |
| EP1287564B1 (de) | 2006-03-29 |
| AU2001258520A1 (en) | 2001-11-20 |
| FR2808924B1 (fr) | 2002-08-16 |
| JP2003535461A (ja) | 2003-11-25 |
| US6703681B2 (en) | 2004-03-09 |
| FR2808924A1 (fr) | 2001-11-16 |
| DE60118358T2 (de) | 2006-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |