JPS5690566A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5690566A
JPS5690566A JP16878579A JP16878579A JPS5690566A JP S5690566 A JPS5690566 A JP S5690566A JP 16878579 A JP16878579 A JP 16878579A JP 16878579 A JP16878579 A JP 16878579A JP S5690566 A JPS5690566 A JP S5690566A
Authority
JP
Japan
Prior art keywords
substrate
layer
distance
epitaxial layer
surrounding section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16878579A
Other languages
Japanese (ja)
Inventor
Mitsutoshi Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16878579A priority Critical patent/JPS5690566A/en
Publication of JPS5690566A publication Critical patent/JPS5690566A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To resist pressure to a high degree by a method wherein a p<+> layer is formed to an n epitaxial layer on an n<+> substrate, a surrounding section is deepened, the n<+> substrate is convexly made up and a distance between the surroundings of the p<+> layer and the n<+> substrate is not changed substantially. CONSTITUTION:An n epitaxial layer 2 is stacked on an n<+> type Si substrate 1, and p type impurities are doubly diffused selectively to form a layer 3, a surrounding section thereof is deeper than a central section. An n<+> buried region 12 is convexly made up from the n<+> substrate 1, and a distance between the p<+> layer 3 and the n<+> substrate is kept in an equal value D1=D3. In this case, a decrease of a variable capacity value can be suppressed even when the n epitaxial layer 2 is thickly built up in order to prevent reaching-through generated in the distance D1, and pressure can be resisted to a high degree because a curvature radius of the surrounding section is large.
JP16878579A 1979-12-24 1979-12-24 Semiconductor device Pending JPS5690566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16878579A JPS5690566A (en) 1979-12-24 1979-12-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16878579A JPS5690566A (en) 1979-12-24 1979-12-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5690566A true JPS5690566A (en) 1981-07-22

Family

ID=15874417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16878579A Pending JPS5690566A (en) 1979-12-24 1979-12-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5690566A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0192151U (en) * 1987-12-08 1989-06-16
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
JP4868683B2 (en) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク Variable capacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830876A (en) * 1971-08-23 1973-04-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830876A (en) * 1971-08-23 1973-04-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0192151U (en) * 1987-12-08 1989-06-16
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
JP4868683B2 (en) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク Variable capacitor

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