ATE317586T1 - Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschema - Google Patents

Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschema

Info

Publication number
ATE317586T1
ATE317586T1 AT01309366T AT01309366T ATE317586T1 AT E317586 T1 ATE317586 T1 AT E317586T1 AT 01309366 T AT01309366 T AT 01309366T AT 01309366 T AT01309366 T AT 01309366T AT E317586 T1 ATE317586 T1 AT E317586T1
Authority
AT
Austria
Prior art keywords
coupled
storage elements
sensing device
read port
columns
Prior art date
Application number
AT01309366T
Other languages
English (en)
Inventor
Mark Slamowitz
Douglas D Smith
Gregory Djaja
David W Knebelsberger
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26937555&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE317586(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Broadcom Corp filed Critical Broadcom Corp
Application granted granted Critical
Publication of ATE317586T1 publication Critical patent/ATE317586T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
AT01309366T 2000-11-03 2001-11-05 Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschema ATE317586T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24591300P 2000-11-03 2000-11-03
US09/964,971 US6519204B2 (en) 2000-11-03 2001-09-27 Very small swing high performance CMOS static memory (multi-port register file) with power reducing column multiplexing scheme

Publications (1)

Publication Number Publication Date
ATE317586T1 true ATE317586T1 (de) 2006-02-15

Family

ID=26937555

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01309366T ATE317586T1 (de) 2000-11-03 2001-11-05 Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschema

Country Status (4)

Country Link
US (2) US6519204B2 (de)
EP (1) EP1204121B1 (de)
AT (1) ATE317586T1 (de)
DE (1) DE60117114T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6639866B2 (en) * 2000-11-03 2003-10-28 Broadcom Corporation Very small swing high performance asynchronous CMOS static memory (multi-port register file) with power reducing column multiplexing scheme
US6946901B2 (en) * 2001-05-22 2005-09-20 The Regents Of The University Of California Low-power high-performance integrated circuit and related methods
WO2003083872A2 (en) * 2002-03-27 2003-10-09 The Regents Of The University Of California Low-power high-performance memory cell and related methods
JP4537668B2 (ja) * 2003-05-23 2010-09-01 パナソニック株式会社 多ポートメモリセル
EP1642299A4 (de) * 2003-07-01 2007-03-14 Zmos Technology Inc Sram-zellenstruktur und -schaltungen
JP4904154B2 (ja) * 2003-07-14 2012-03-28 フルクラム・マイクロシステムズ・インコーポレーテッド 非同期スタティックランダムアクセスメモリ
EP1526590A2 (de) * 2003-09-22 2005-04-27 Fuji Photo Film Co., Ltd. Batterie und ein Paar Kontakte und Objektiv-gepasstes Fotofilmeinheit
US6987686B2 (en) * 2003-12-11 2006-01-17 International Business Machines Corporation Performance increase technique for use in a register file having dynamically boosted wordlines
FR2871922A1 (fr) * 2004-06-17 2005-12-23 St Microelectronics Sa Cellule de memoire vive a encombrement et complexite reduits
US7469465B2 (en) * 2004-06-30 2008-12-30 Hitachi Global Storage Technologies Netherlands B.V. Method of providing a low-stress sensor configuration for a lithography-defined read sensor
US7209395B2 (en) * 2004-09-28 2007-04-24 Intel Corporation Low leakage and leakage tolerant stack free multi-ported register file
US7660149B2 (en) * 2006-12-07 2010-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell with separate read and write ports
US7746713B2 (en) * 2007-09-12 2010-06-29 Massachusetts Institute Of Technology High density 45 nm SRAM using small-signal non-strobed regenerative sensing
US8370557B2 (en) * 2008-12-19 2013-02-05 Intel Corporation Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory
TWI419173B (zh) * 2009-07-31 2013-12-11 Univ Nat Chiao Tung Static random access memory device
US8456945B2 (en) 2010-04-23 2013-06-04 Advanced Micro Devices, Inc. 10T SRAM for graphics processing
CN103890856B (zh) 2011-10-27 2017-07-11 慧与发展有限责任合伙企业 支持内存储数据结构的可移位存储器
US8854902B2 (en) * 2012-05-18 2014-10-07 Stmicroelectronics International N.V. Write self timing circuitry for self-timed memory
US8854901B2 (en) 2012-05-18 2014-10-07 Stmicroelectronics International N.V. Read self timing circuitry for self-timed memory
CN102751975B (zh) * 2012-07-12 2016-01-20 三一重工股份有限公司 Pwm与ai复用端口及控制器
US9324414B2 (en) 2013-07-24 2016-04-26 Stmicroelectronics International N.V. Selective dual cycle write operation for a self-timed memory
CN104199344B (zh) * 2014-08-14 2017-08-18 湖南三一智能控制设备有限公司 接口电路、控制器、控制系统及工程机械
US10446233B2 (en) 2017-08-23 2019-10-15 Globalfoundries Inc. Sense-line muxing scheme

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
EP0218747B1 (de) * 1985-10-15 1991-05-08 International Business Machines Corporation Leseverstärker zur Verstärkung von Signalen auf einer vorgespannten Leitung
US4935649A (en) * 1988-07-11 1990-06-19 Cypress Semiconductor Corporation Clamped sense amplifier
US4918341A (en) * 1988-09-23 1990-04-17 Actel Corporaton High speed static single-ended sense amplifier
JP2837682B2 (ja) * 1989-01-13 1998-12-16 株式会社日立製作所 半導体記憶装置
US4943945A (en) * 1989-06-13 1990-07-24 International Business Machines Corporation Reference voltage generator for precharging bit lines of a transistor memory
US5189640A (en) * 1990-03-27 1993-02-23 National Semiconductor Corporation High speed, multi-port memory cell utilizable in a BICMOS memory array
US5325335A (en) * 1991-05-30 1994-06-28 Integrated Device Technology, Inc. Memories and amplifiers suitable for low voltage power supplies
US5440506A (en) * 1992-08-14 1995-08-08 Harris Corporation Semiconductor ROM device and method
GB2278698B (en) * 1993-05-05 1997-09-03 Hewlett Packard Co Multi-ported data storage device with improved cell stability
US5477489A (en) * 1995-03-20 1995-12-19 Exponential Technology, Inc. High-stability CMOS multi-port register file memory cell with column isolation and current-mirror row line driver
US5710742A (en) * 1995-05-12 1998-01-20 International Business Machines Corporation High density two port SRAM cell for low voltage CMOS applications
US5724299A (en) * 1996-04-30 1998-03-03 Sun Microsystems, Inc. Multiport register file memory using small voltage swing for write operation

Also Published As

Publication number Publication date
DE60117114D1 (de) 2006-04-20
EP1204121A2 (de) 2002-05-08
DE60117114T2 (de) 2006-09-28
US20030099148A1 (en) 2003-05-29
EP1204121A3 (de) 2002-10-16
US6903996B2 (en) 2005-06-07
US6519204B2 (en) 2003-02-11
US20020071333A1 (en) 2002-06-13
EP1204121B1 (de) 2006-02-08

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