ATE299614T1 - Dünnschichtwiderstand mit tantalpentoxid feuchtigkeitsbarriere - Google Patents

Dünnschichtwiderstand mit tantalpentoxid feuchtigkeitsbarriere

Info

Publication number
ATE299614T1
ATE299614T1 AT01924989T AT01924989T ATE299614T1 AT E299614 T1 ATE299614 T1 AT E299614T1 AT 01924989 T AT01924989 T AT 01924989T AT 01924989 T AT01924989 T AT 01924989T AT E299614 T1 ATE299614 T1 AT E299614T1
Authority
AT
Austria
Prior art keywords
thin film
layer
tantalpen
moisture barrier
film resistance
Prior art date
Application number
AT01924989T
Other languages
English (en)
Inventor
Stephen C Vincent
Original Assignee
Vishay Dale Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Dale Electronics Inc filed Critical Vishay Dale Electronics Inc
Application granted granted Critical
Publication of ATE299614T1 publication Critical patent/ATE299614T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)
  • Details Of Resistors (AREA)
AT01924989T 2001-04-09 2001-04-12 Dünnschichtwiderstand mit tantalpentoxid feuchtigkeitsbarriere ATE299614T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/829,169 US7214295B2 (en) 2001-04-09 2001-04-09 Method for tantalum pentoxide moisture barrier in film resistors
PCT/US2001/012034 WO2002082474A1 (en) 2001-04-09 2001-04-12 Thin film resistor having tantalum pentoxide moisture barrier

Publications (1)

Publication Number Publication Date
ATE299614T1 true ATE299614T1 (de) 2005-07-15

Family

ID=25253729

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01924989T ATE299614T1 (de) 2001-04-09 2001-04-12 Dünnschichtwiderstand mit tantalpentoxid feuchtigkeitsbarriere

Country Status (6)

Country Link
US (2) US7214295B2 (de)
EP (1) EP1377990B1 (de)
JP (1) JP3863491B2 (de)
AT (1) ATE299614T1 (de)
DE (1) DE60111961T2 (de)
WO (1) WO2002082474A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7271700B2 (en) * 2005-02-16 2007-09-18 International Business Machines Corporation Thin film resistor with current density enhancing layer (CDEL)
WO2014075859A1 (fr) * 2012-11-16 2014-05-22 Nivarox-Far S.A. Résonateur moins sensible aux variations climatiques
FR3002386A1 (fr) * 2013-02-18 2014-08-22 Pierre Emile Jean Marie Pinsseau Amplificateur a distorsions residuelles
MX360883B (es) 2013-12-10 2018-11-21 Illumina Inc Biosensores para análisis biológico o químico y métodos para fabricarlos.
US9508474B2 (en) * 2015-01-15 2016-11-29 Shih-Long Wei Method for manufacturing anticorrosive thin film resistor and structure thereof
TW202136550A (zh) * 2020-03-25 2021-10-01 光頡科技股份有限公司 薄膜電阻層製備方法
DE102021121240A1 (de) * 2021-08-16 2023-02-16 Vishay Electronic Gmbh Elektrisches Widerstandsbauelement

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1022075A (en) 1961-12-20 1966-03-09 Western Electric Co Improvements in or relating to film resistors
US3266005A (en) * 1964-04-15 1966-08-09 Western Electric Co Apertured thin-film circuit components
US3457148A (en) * 1964-10-19 1969-07-22 Bell Telephone Labor Inc Process for preparation of stabilized metal film resistors
US3474305A (en) * 1968-03-27 1969-10-21 Corning Glass Works Discontinuous thin film multistable state resistors
US3809627A (en) * 1968-11-19 1974-05-07 Western Electric Co Anodized cermet film components and their manufacture
DE2215151C3 (de) 1972-03-28 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dünnen Schichten aus Tantal
US4005050A (en) * 1972-04-19 1977-01-25 Champion Spark Plug Company Tantalum or niobium-modified resistor element
US3896284A (en) * 1972-06-12 1975-07-22 Microsystems Int Ltd Thin-film microelectronic resistors
JPS523196A (en) 1975-06-26 1977-01-11 Oki Electric Ind Co Ltd Method of manufacturing a thin film device
US4019168A (en) 1975-08-21 1977-04-19 Airco, Inc. Bilayer thin film resistor and method for manufacture
US4002542A (en) * 1976-02-09 1977-01-11 Corning Glass Works Thin film capacitor and method
JPS5375472A (en) 1976-12-17 1978-07-04 Hitachi Ltd Method of producing thin film resistive ic
US4217570A (en) 1978-05-30 1980-08-12 Tektronix, Inc. Thin-film microcircuits adapted for laser trimming
JPS5923404B2 (ja) 1978-10-09 1984-06-01 株式会社徳田製作所 耐蝕性透明導電膜形成方法
JPS57135932A (en) 1981-02-16 1982-08-21 Mamiya Koki Kk Aperture blade driving device
JPS5926277A (ja) * 1982-08-04 1984-02-10 Ricoh Co Ltd サ−マルヘツドの製造方法
JPS59147499A (ja) 1983-02-14 1984-08-23 株式会社日立製作所 磁性物品のストツカ−
US4539434A (en) 1983-07-14 1985-09-03 At&T Technologies, Inc. Film-type electrical substrate circuit device and method of forming the device
JPS60116452A (ja) 1983-11-30 1985-06-22 Canon Inc インクジェットヘッド
JPS6127264A (ja) * 1984-07-18 1986-02-06 Alps Electric Co Ltd サ−マルヘツドの形成方法
JPS6135973A (ja) * 1984-07-30 1986-02-20 Hitachi Ltd 感熱ヘツド
JPH0647291B2 (ja) 1984-08-17 1994-06-22 京セラ株式会社 サ−マルヘツド
JPS61107542U (de) * 1984-12-19 1986-07-08
JPS61172754A (ja) 1985-01-26 1986-08-04 Kyocera Corp サ−マルヘツド
JPS61255001A (ja) 1985-05-07 1986-11-12 富士ゼロックス株式会社 サ−マルヘツド
US4965594A (en) 1986-02-28 1990-10-23 Canon Kabushiki Kaisha Liquid jet recording head with laminated heat resistive layers on a support member
US4837550A (en) 1987-05-08 1989-06-06 Dale Electronics, Inc. Nichrome resistive element and method of making same
JP2627274B2 (ja) 1987-08-27 1997-07-02 セイコー電子工業株式会社 サーマルヘッド用発熱低抗体
US4949065A (en) * 1987-09-21 1990-08-14 Matsushita Electric Industrial Co., Ltd. Resistor composition, resistor produced therefrom, and method of producing resistor
JPH01291401A (ja) 1988-05-19 1989-11-24 Fuji Elelctrochem Co Ltd 薄膜抵抗体及びその製造方法
US4952904A (en) 1988-12-23 1990-08-28 Honeywell Inc. Adhesion layer for platinum based sensors
US5077564A (en) * 1990-01-26 1991-12-31 Dynamics Research Corporation Arcuate edge thermal print head
US5317341A (en) * 1991-01-24 1994-05-31 Rohm Co., Ltd. Thermal head and method of making the same
US5076906A (en) * 1991-01-31 1991-12-31 Raytheon Company Method for testing encapsulation integrity
JPH07153603A (ja) 1993-11-26 1995-06-16 Hitachi Koki Co Ltd インクジェット用発熱抵抗体の製造方法及びインクジェットプリンタ
JP2844051B2 (ja) * 1994-10-31 1999-01-06 セイコーインスツルメンツ株式会社 サーマルヘッド
JP3494747B2 (ja) 1995-03-31 2004-02-09 石塚電子株式会社 薄膜温度センサ及びその製造方法
TW424245B (en) * 1998-01-08 2001-03-01 Matsushita Electric Ind Co Ltd Resistor and its manufacturing method
EP0973020B1 (de) 1998-07-16 2009-06-03 EPIQ Sensor-Nite N.V. Elektrischer Temperatur-Sensor mit Mehrfachschicht
CN1269074C (zh) 1999-09-27 2006-08-09 皇家菲利浦电子有限公司 水印检测
DE19961683A1 (de) * 1999-12-21 2001-06-28 Philips Corp Intellectual Pty Bauteil mit Dünnschichtschaltkreis
JP2001316611A (ja) 2000-05-11 2001-11-16 Daikin Ind Ltd フッ素ゴム塗料組成物

Also Published As

Publication number Publication date
DE60111961T2 (de) 2006-03-30
US20020145504A1 (en) 2002-10-10
JP2004535059A (ja) 2004-11-18
US20020145503A1 (en) 2002-10-10
JP3863491B2 (ja) 2006-12-27
DE60111961D1 (de) 2005-08-18
EP1377990B1 (de) 2005-07-13
US7170389B2 (en) 2007-01-30
EP1377990A1 (de) 2004-01-07
WO2002082474A1 (en) 2002-10-17
US7214295B2 (en) 2007-05-08

Similar Documents

Publication Publication Date Title
DK0678483T3 (da) Glassubstrat overtrukket med flere tynde lag, til beskyttelse mod sol
CA2466450A1 (en) Coated article with improved barrier layer structure and method of making the same
SE0402162D0 (sv) Multilayered film having excellent wear resistance, heat resistance and adhesion to substrate and method for producing the same
MY127800A (en) Thermistor and method of manufacture.
EP1139453A3 (de) Lichtausstrahlende Vorrichtung und Herstellungsverfahren
EP1191819A3 (de) Organische Elektrolumineszenzanzeige
WO2004001837A3 (en) Methods of forming electronic structures including conductive shunt layers and related structures
CA2058513A1 (en) Soi-type thin film transistor and manufacturing method therefor
WO2004041918A3 (en) Microstructures and methods of fabrication thereof
TW200707475A (en) Chip resistor and manufacturing method thereof
WO2004108618A3 (en) Appliance with coated transparency
EP1521316A3 (de) Lichtemittierendes Element und Verfahren zur Herstellung dafür, und lichtemittierende Vorrichtung mit dem lichtemittierenden Element
ATE416914T1 (de) Laminierter körper
TW200702856A (en) Copper wire or copper electrode protected by silver thin layer and liquid crystal display device having the wire or electrode
WO2002093663A3 (en) Luminescent display device and method of manufacturing same
ATE299614T1 (de) Dünnschichtwiderstand mit tantalpentoxid feuchtigkeitsbarriere
EP0989615A3 (de) Halbleiterbauelement mit Kondensator und diesbezügliches Herstellungsverfahren
WO2002061801A3 (en) Dual gate process using self-assembled molecular layer
ATE409860T1 (de) Gassensor mit einer dünnen halbleitenden schicht
EP1119057A3 (de) Lichtdurchlässige Elektrode, Strukturierungsverfahren und Herstellungsverfahren eines, diese Elektrode anwendenden, Halbleiterbauelements
TW200625486A (en) Bonding structure and fabrication thereof
EP1592050A4 (de) Herstellungsverfahren für halbdurchsichtiges, halbreflektierendes elektrodensubstrat, substrat mit reflektierendem element, herstellungsverfahren dafür und beim herstellungsverfahren für das reflektierende elektrodensubstrat verwendete ätzzusammensetzung
EP1267405A3 (de) Halbleiteranordung und Herstellungsverfahren dafür
CA2368337A1 (en) Thermistor and method of manufacture
DE59704902D1 (de) Schichtkörper mit nachleuchteigenschaften, verfahren zu dessen herstellung und dessen verwendung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties