GB1022075A - Improvements in or relating to film resistors - Google Patents

Improvements in or relating to film resistors

Info

Publication number
GB1022075A
GB1022075A GB4706762A GB4706762A GB1022075A GB 1022075 A GB1022075 A GB 1022075A GB 4706762 A GB4706762 A GB 4706762A GB 4706762 A GB4706762 A GB 4706762A GB 1022075 A GB1022075 A GB 1022075A
Authority
GB
United Kingdom
Prior art keywords
substrate
atmosphere
tantalum
oxygen
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4706762A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1022075A publication Critical patent/GB1022075A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)

Abstract

<PICT:1022075/C6-C7/1> A film resistor comprises an amorphous film of tantalum and tantalum pentoxide deposited on a substrate, e.g. at a temperature of 100-400 DEG C. by reactive sputtering, in an atmosphere containing oxygen using tantalum, the flow rate of oxygen in the atmosphere being preferably 100-10,000 micron cu.foot/g. of sputtered Ta. The sputtered film may be anodized at 25 volts D.C. using an aqueous HNO3 electrolyte and then pre-aged by heating in air e.g. at 250-400 DEG C. for 1-5 hours. As shown in Fig. 1, the sputtering may be effected inside a vacuum chamber 11, containing an atmosphere of oxygen and argon of the desired pressure, by means of a cathode 12, composed of Ta or serving as a base for Ta e.g. in the form of a coating or foil, spaced from an anode 13 above which is disposed, supported on a platform 15, the substrate 16, which may be glazed ceramic or glass initially cleaned by boiling in aqua regia or H2O2. A refractory mask 17, which may be of aluminium, may bear under pressure against the upper surface of the substrate.ALSO:<PICT:1022075/C1/1> A film resistor comprises an amorphous film of tantalum and tantalum pentoxide deposited on a substrate, e.g. at a temperature of 100 DEG to 400 DEG C. by reactive sputtering, in an atmosphere containing oxygen using tantalum, the flow rate of oxygen in the atmosphere being preferably 100-10,000 micron cu. ft./g. of sputtered Ta. The sputtered film may be anodized at 25 volts D.C. using an aqueous HNO3 electrolyte and then pre-aged by heating in air, e.g. at 250-400 DEG C. for 1 to 5 hours. As shown in Fig. 1, the sputtering may be effected inside a vacuum chamber 11, containing an atmosphere of oxy gen and argon of the desired pressure, by means of a cathode 12, composed of Ta or serving as a base for Ta, e.g. in the form of a coating or foil, spaced from an anode 13 above which is disposed, supported on a platform 15, the substrate 16, which may be glazed ceramic or glass initially cleaned by boiling in aqua regia or H2O2. A refractory mask 17, which may be of aluminium, may bear under pressure against the upper surface of the substrate.
GB4706762A 1961-12-20 1962-12-13 Improvements in or relating to film resistors Expired GB1022075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16076961A 1961-12-20 1961-12-20

Publications (1)

Publication Number Publication Date
GB1022075A true GB1022075A (en) 1966-03-09

Family

ID=22578359

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4706762A Expired GB1022075A (en) 1961-12-20 1962-12-13 Improvements in or relating to film resistors

Country Status (1)

Country Link
GB (1) GB1022075A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035351A2 (en) * 1980-02-29 1981-09-09 Gould Inc. Deformable flexure element for strain gage transducer and method of manufacture
FR2494437A1 (en) * 1980-11-20 1982-05-21 Commissariat Energie Atomique MEASURING DEVICE COMPRISING A STRAIN GAUGE WITH A THIN GLASS HOLDER
GB2152859A (en) * 1983-11-19 1985-08-14 Brenton Vann Universal electro-magnetic drill stand base
WO2002082474A1 (en) * 2001-04-09 2002-10-17 Vishay Dale Electronics, Inc. Thin film resistor having tantalum pentoxide moisture barrier

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035351A2 (en) * 1980-02-29 1981-09-09 Gould Inc. Deformable flexure element for strain gage transducer and method of manufacture
EP0035351A3 (en) * 1980-02-29 1981-10-07 Gould Inc. Deformable flexure element for strain gage transducer and method of manufacture
FR2494437A1 (en) * 1980-11-20 1982-05-21 Commissariat Energie Atomique MEASURING DEVICE COMPRISING A STRAIN GAUGE WITH A THIN GLASS HOLDER
EP0053059A1 (en) * 1980-11-20 1982-06-02 Commissariat à l'Energie Atomique Strain gauge measurement device with a thin-glass layer support
GB2152859A (en) * 1983-11-19 1985-08-14 Brenton Vann Universal electro-magnetic drill stand base
WO2002082474A1 (en) * 2001-04-09 2002-10-17 Vishay Dale Electronics, Inc. Thin film resistor having tantalum pentoxide moisture barrier
US7170389B2 (en) 2001-04-09 2007-01-30 Vishay Dale Electronics, Inc. Apparatus for tantalum pentoxide moisture barrier in film resistors
US7214295B2 (en) 2001-04-09 2007-05-08 Vishay Dale Electronics, Inc. Method for tantalum pentoxide moisture barrier in film resistors

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