ATE291104T1 - Gasinjektions-system für plasma- behandlungsvorrichtung - Google Patents

Gasinjektions-system für plasma- behandlungsvorrichtung

Info

Publication number
ATE291104T1
ATE291104T1 AT98931773T AT98931773T ATE291104T1 AT E291104 T1 ATE291104 T1 AT E291104T1 AT 98931773 T AT98931773 T AT 98931773T AT 98931773 T AT98931773 T AT 98931773T AT E291104 T1 ATE291104 T1 AT E291104T1
Authority
AT
Austria
Prior art keywords
orifices
plasma processing
processing chamber
chamber
gas
Prior art date
Application number
AT98931773T
Other languages
German (de)
English (en)
Inventor
Brian Mcmillin
Huong Nguyen
Michael Barnes
Tom Ni
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE291104T1 publication Critical patent/ATE291104T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
AT98931773T 1997-06-30 1998-06-30 Gasinjektions-system für plasma- behandlungsvorrichtung ATE291104T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/885,353 US6013155A (en) 1996-06-28 1997-06-30 Gas injection system for plasma processing
PCT/US1998/013777 WO1999000532A1 (en) 1997-06-30 1998-06-30 Gas injection system for plasma processing apparatus

Publications (1)

Publication Number Publication Date
ATE291104T1 true ATE291104T1 (de) 2005-04-15

Family

ID=25386718

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98931773T ATE291104T1 (de) 1997-06-30 1998-06-30 Gasinjektions-system für plasma- behandlungsvorrichtung

Country Status (7)

Country Link
US (1) US6013155A (enExample)
EP (1) EP1017876B1 (enExample)
JP (1) JP4153048B2 (enExample)
AT (1) ATE291104T1 (enExample)
DE (1) DE69829390T2 (enExample)
TW (1) TW514672B (enExample)
WO (1) WO1999000532A1 (enExample)

Families Citing this family (171)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000514136A (ja) * 1996-06-28 2000-10-24 ラム リサーチ コーポレイション 高密度プラズマ化学蒸着装置および方法
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
DE19900179C1 (de) * 1999-01-07 2000-02-24 Bosch Gmbh Robert Plasmaätzanlage
KR100331544B1 (ko) * 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP2000349078A (ja) * 1999-06-03 2000-12-15 Mitsubishi Electric Corp 化学気相成長装置および半導体装置の製造方法
JP2001023959A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6383954B1 (en) * 1999-07-27 2002-05-07 Applied Materials, Inc. Process gas distribution for forming stable fluorine-doped silicate glass and other films
US6432259B1 (en) 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
US6974452B1 (en) 2000-01-12 2005-12-13 Clinicon Corporation Cutting and cauterizing surgical tools
RU2184016C2 (ru) * 2000-01-17 2002-06-27 Фгуп "Внииавтогенмаш" Устройство для воздушно-плазменной резки
KR100470986B1 (ko) * 2000-03-14 2005-03-07 주성엔지니어링(주) 반도체소자 제조용 고진공 장치 및 이를 이용한 에피택셜막 형성방법
EP1139402A1 (en) * 2000-03-27 2001-10-04 Infineon Technologies AG Method and arrangement for depositing a dielectric layer
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
KR100332314B1 (ko) * 2000-06-24 2002-04-12 서성기 박막증착용 반응용기
RU2188878C2 (ru) * 2000-07-19 2002-09-10 Омский государственный университет Способ нанесения пленок аморфного кремния и устройство для его осуществления
US6896737B1 (en) * 2000-08-28 2005-05-24 Micron Technology, Inc. Gas delivery device for improved deposition of dielectric material
US6481447B1 (en) * 2000-09-27 2002-11-19 Lam Research Corporation Fluid delivery ring and methods for making and implementing the same
US6333272B1 (en) 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
KR100413145B1 (ko) * 2001-01-11 2003-12-31 삼성전자주식회사 가스 인젝터 및 이를 갖는 식각 장치
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US20020122896A1 (en) * 2001-03-02 2002-09-05 Skion Corporation Capillary discharge plasma apparatus and method for surface treatment using the same
US6752166B2 (en) 2001-05-24 2004-06-22 Celerity Group, Inc. Method and apparatus for providing a determined ratio of process fluids
KR20020095842A (ko) * 2001-06-16 2002-12-28 삼성전자 주식회사 반도체 에싱장치
JP4608827B2 (ja) * 2001-08-15 2011-01-12 ソニー株式会社 プラズマ処理装置及びプラズマ処理方法
US6706138B2 (en) 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
JP2005514762A (ja) * 2001-12-20 2005-05-19 東京エレクトロン株式会社 加工物をプラズマ処理するための磁気フィルタを備える方法および装置
JP4099092B2 (ja) * 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
EP1504136A2 (en) * 2002-05-03 2005-02-09 Ecole Polytechnique Fédérale de Lausanne (EPFL) Large area deposition in high vacuum with high thickness uniformity
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
TW529456U (en) * 2002-06-27 2003-04-21 Nanya Technology Corp Pipeline for mixing
US20040231798A1 (en) * 2002-09-13 2004-11-25 Applied Materials, Inc. Gas delivery system for semiconductor processing
US20040065256A1 (en) * 2002-10-03 2004-04-08 Kim Gi Youl Systems and methods for improved gas delivery
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7534363B2 (en) * 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
US20040112540A1 (en) 2002-12-13 2004-06-17 Lam Research Corporation Uniform etch system
WO2004073768A2 (en) * 2003-02-18 2004-09-02 Medtronic, Inc. Occlusion resistant hydrocephalic shunt
US20040173314A1 (en) * 2003-03-05 2004-09-09 Ryoji Nishio Plasma processing apparatus and method
CN101068950A (zh) * 2003-05-30 2007-11-07 阿维扎技术公司 气体分配系统
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
US20050092245A1 (en) * 2003-11-03 2005-05-05 Ahn-Sik Moon Plasma chemical vapor deposition apparatus having an improved nozzle configuration
KR100578136B1 (ko) * 2004-01-27 2006-05-10 삼성전자주식회사 플라즈마로 강화된 반도체 증착 장비
JP4713903B2 (ja) * 2004-03-04 2011-06-29 三星モバイルディスプレイ株式會社 誘導結合プラズマ化学気相蒸着装置
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20060051392A1 (en) * 2004-09-03 2006-03-09 Medtronic, Inc. Porous coatings for drug release from medical devices
US7658991B2 (en) * 2004-10-21 2010-02-09 University Of Georgia Research Foundation, Inc. Structures having aligned nanorods and methods of making
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7510624B2 (en) * 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
KR100854995B1 (ko) * 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US20070022959A1 (en) * 2005-07-29 2007-02-01 Craig Bercaw Deposition apparatus for semiconductor processing
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7651587B2 (en) * 2005-08-11 2010-01-26 Applied Materials, Inc. Two-piece dome with separate RF coils for inductively coupled plasma reactors
JP2007051002A (ja) * 2005-08-19 2007-03-01 Kyocera Mita Corp 用紙カセット
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US20070068623A1 (en) * 2005-09-27 2007-03-29 Yunsang Kim Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
TWI409873B (zh) * 2005-11-02 2013-09-21 松下電器產業股份有限公司 電漿處理裝置
US8088248B2 (en) * 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP5068458B2 (ja) * 2006-01-18 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7685965B1 (en) 2006-01-26 2010-03-30 Lam Research Corporation Apparatus for shielding process chamber port
JP4915985B2 (ja) * 2006-02-06 2012-04-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
US20070234956A1 (en) * 2006-04-05 2007-10-11 Dalton Jeremie J Method and apparatus for providing uniform gas delivery to a reactor
JP5055834B2 (ja) * 2006-05-17 2012-10-24 東洋製罐株式会社 プラズマ処理用ガス供給管
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US20080081114A1 (en) * 2006-10-03 2008-04-03 Novellus Systems, Inc. Apparatus and method for delivering uniform fluid flow in a chemical deposition system
US20080095953A1 (en) * 2006-10-24 2008-04-24 Samsung Electronics Co., Ltd. Apparatus for depositing thin film and method of depositing the same
US20080124944A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7740706B2 (en) * 2006-11-28 2010-06-22 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US20080121177A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080156264A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US7993457B1 (en) 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
DE102007045216A1 (de) * 2007-09-21 2009-04-02 Khs Corpoplast Gmbh & Co. Kg Vorrichtung zur Plasmabehandlung von Werkstücken
US7939447B2 (en) * 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US20090197014A1 (en) * 2008-02-04 2009-08-06 Atomic Energy Council - Institute Of Nuclear Energy Research Apparatus and method for coating diamond on work pieces via hot filament chemical vapor deposition
US20090221149A1 (en) * 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
KR101624123B1 (ko) * 2008-10-31 2016-05-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
JP2010251705A (ja) * 2009-03-24 2010-11-04 Nuflare Technology Inc 成膜装置および成膜方法
US8931431B2 (en) 2009-03-25 2015-01-13 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US20110120375A1 (en) * 2009-11-23 2011-05-26 Jusung Engineering Co., Ltd. Apparatus for processing substrate
KR101589109B1 (ko) * 2009-11-23 2016-01-28 주성엔지니어링(주) 기판처리장치
KR101587053B1 (ko) * 2009-11-23 2016-01-21 주성엔지니어링(주) 기판처리장치
SG10201407637TA (en) * 2009-11-30 2015-01-29 Lam Res Corp An electrostatic chuck with an angled sidewall
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP2012038965A (ja) * 2010-08-09 2012-02-23 Lapis Semiconductor Co Ltd 半導体装置及びその製造方法
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US20120152900A1 (en) * 2010-12-20 2012-06-21 Applied Materials, Inc. Methods and apparatus for gas delivery into plasma processing chambers
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP5902896B2 (ja) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
US20130133701A1 (en) * 2011-11-28 2013-05-30 Intermolecular, Inc. Method and apparatus for dispensing an inert gas
US9941100B2 (en) * 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
JP5929429B2 (ja) * 2012-03-30 2016-06-08 東京エレクトロン株式会社 成膜装置
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US20140038421A1 (en) * 2012-08-01 2014-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition Chamber and Injector
KR101411993B1 (ko) * 2012-09-25 2014-06-26 (주)젠 안테나 어셈블리 및 이를 구비한 플라즈마 처리 챔버
US9790596B1 (en) * 2013-01-30 2017-10-17 Kyocera Corporation Gas nozzle and plasma device employing same
JP2014157944A (ja) * 2013-02-15 2014-08-28 Toshiba Corp ガス供給部材及びプラズマ処理装置
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US20150368783A1 (en) * 2013-02-25 2015-12-24 Applied Materials, Inc. Deposition apparatus with gas supply and method for depositing material
KR102104018B1 (ko) * 2013-03-12 2020-04-23 어플라이드 머티어리얼스, 인코포레이티드 방위각 및 방사상 분배 제어되는 다중-구역 가스 주입 조립체
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
CN104103484B (zh) * 2013-04-15 2017-07-25 中微半导体设备(上海)有限公司 气体供应装置及等离子体处理装置
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
JP2015082546A (ja) * 2013-10-22 2015-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6209064B2 (ja) * 2013-11-13 2017-10-04 東レエンジニアリング株式会社 薄膜形成装置
US9393666B2 (en) 2013-12-20 2016-07-19 Lam Research Corporation Adapter plate for polishing and cleaning electrodes
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US9275840B2 (en) * 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
JP6499835B2 (ja) * 2014-07-24 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US20160362813A1 (en) * 2015-06-12 2016-12-15 Applied Materials, Inc. Injector for semiconductor epitaxy growth
US9960009B2 (en) 2015-07-17 2018-05-01 Lam Research Corporation Methods and systems for determining a fault in a gas heater channel
KR101715192B1 (ko) * 2015-10-27 2017-03-23 주식회사 유진테크 기판처리장치
CN114551206A (zh) * 2015-12-04 2022-05-27 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
DE102016108845A1 (de) * 2016-05-12 2017-11-16 Stephan Wege Gasinjektor für Reaktorbereiche
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US11560627B2 (en) 2017-05-23 2023-01-24 Starfire Industries Llc Atmospheric cold plasma jet coating and surface treatment
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control
US10790119B2 (en) * 2017-06-09 2020-09-29 Mattson Technology, Inc Plasma processing apparatus with post plasma gas injection
US10147597B1 (en) * 2017-09-14 2018-12-04 Lam Research Corporation Turbulent flow spiral multi-zone precursor vaporizer
JP7002268B2 (ja) 2017-09-28 2022-01-20 東京エレクトロン株式会社 プラズマ処理装置
US10840066B2 (en) 2018-06-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable fastening device for plasma gas injectors
JP7487189B2 (ja) 2018-10-19 2024-05-20 ラム リサーチ コーポレーション 間隙充填のためのドープまたは非ドープシリコン炭化物および遠隔水素プラズマ曝露
CN116884826A (zh) * 2019-01-25 2023-10-13 玛特森技术公司 隔栅中的等离子体后气体注入
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
CN112017932B (zh) * 2019-05-31 2022-11-29 中微半导体设备(上海)股份有限公司 等离子体处理装置中气体输送系统的耐腐蚀结构
CN113130285B (zh) * 2019-12-31 2022-04-15 江苏鲁汶仪器有限公司 一种陶瓷进气接射频清洗装置
KR102607844B1 (ko) * 2020-07-10 2023-11-30 세메스 주식회사 기판 처리 장치 및 기판 지지 유닛
WO2022039858A1 (en) * 2020-08-19 2022-02-24 Applied Materials, Inc. Substrate processing chamber with side gas injection
AU2022206483A1 (en) 2021-01-11 2023-08-31 6K Inc. Methods and systems for reclamation of li-ion cathode materials using microwave plasma processing
US12362159B2 (en) * 2021-04-07 2025-07-15 Lam Research Corporation Systems and methods for controlling a plasma sheath characteristic
JP7572128B2 (ja) * 2021-05-31 2024-10-23 東京エレクトロン株式会社 プラズマ処理装置
US20230247751A1 (en) * 2022-02-02 2023-08-03 6K Inc. Microwave plasma apparatus and methods for processing feed material utiziling multiple microwave plasma applicators
WO2023229928A1 (en) 2022-05-23 2023-11-30 6K Inc. Microwave plasma apparatus and methods for processing materials using an interior liner
DE102023212258A1 (de) 2023-12-06 2025-06-12 Robert Bosch Gesellschaft mit beschränkter Haftung Gaseinlassrohr für einen LPCVD Horizontalreaktor

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371524A1 (fr) * 1976-11-18 1978-06-16 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
JPS5994811A (ja) * 1982-11-22 1984-05-31 Mitsubishi Electric Corp プラズマｃｖｄ処理装置
AU548915B2 (en) * 1983-02-25 1986-01-09 Toyota Jidosha Kabushiki Kaisha Plasma treatment
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
US4614639A (en) * 1985-04-26 1986-09-30 Tegal Corporation Compound flow plasma reactor
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
EP0308946B1 (en) * 1987-09-22 1993-11-24 Nec Corporation Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4877641A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
US4996077A (en) * 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5164040A (en) * 1989-08-21 1992-11-17 Martin Marietta Energy Systems, Inc. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets
JPH0394069A (ja) * 1989-09-05 1991-04-18 Mitsubishi Electric Corp 薄膜形成装置
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
JP2839720B2 (ja) * 1990-12-19 1998-12-16 株式会社東芝 熱処理装置
DE4106770C2 (de) * 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
CA2060917A1 (en) * 1991-03-12 1992-09-13 Milam Pender Plasma enhanced chemical vapor deposition device
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JP3375646B2 (ja) * 1991-05-31 2003-02-10 株式会社日立製作所 プラズマ処理装置
KR100255703B1 (ko) * 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
US5279865A (en) * 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
JP2875945B2 (ja) * 1993-01-28 1999-03-31 アプライド マテリアルズ インコーポレイテッド Ｃｖｄにより大面積のガラス基板上に高堆積速度でシリコン窒化薄膜を堆積する方法
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5384008A (en) * 1993-06-18 1995-01-24 Applied Materials, Inc. Process and apparatus for full wafer deposition
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
EP0967633A1 (en) * 1993-07-30 1999-12-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5498313A (en) * 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
TW296534B (enExample) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5552124A (en) * 1994-06-22 1996-09-03 Applied Materials, Inc. Stationary focus ring for plasma reactor
JP3699142B2 (ja) * 1994-09-30 2005-09-28 アネルバ株式会社 薄膜形成装置
US5591268A (en) * 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source

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