ATE156198T1 - Verfahren zum herstellen verbesserter cvd kupferfilme - Google Patents
Verfahren zum herstellen verbesserter cvd kupferfilmeInfo
- Publication number
- ATE156198T1 ATE156198T1 AT94107352T AT94107352T ATE156198T1 AT E156198 T1 ATE156198 T1 AT E156198T1 AT 94107352 T AT94107352 T AT 94107352T AT 94107352 T AT94107352 T AT 94107352T AT E156198 T1 ATE156198 T1 AT E156198T1
- Authority
- AT
- Austria
- Prior art keywords
- introducing
- fluoroaryl
- alkyl
- copper film
- producing improved
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/064,185 US5322712A (en) | 1993-05-18 | 1993-05-18 | Process for improved quality of CVD copper films |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE156198T1 true ATE156198T1 (de) | 1997-08-15 |
Family
ID=22054156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT94107352T ATE156198T1 (de) | 1993-05-18 | 1994-05-11 | Verfahren zum herstellen verbesserter cvd kupferfilme |
Country Status (9)
Country | Link |
---|---|
US (2) | US5322712A (de) |
EP (1) | EP0630988B1 (de) |
JP (1) | JP2641700B2 (de) |
KR (1) | KR960011246B1 (de) |
AT (1) | ATE156198T1 (de) |
DE (1) | DE69404564T2 (de) |
DK (1) | DK0630988T3 (de) |
SG (1) | SG46145A1 (de) |
TW (1) | TW238341B (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5314541A (en) * | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
JP3488735B2 (ja) * | 1994-03-03 | 2004-01-19 | 三菱電機株式会社 | 半導体装置 |
JP2622671B2 (ja) * | 1995-03-07 | 1997-06-18 | 株式会社トリケミカル研究所 | 銅のβ−ジケトネート錯体の製造方法 |
US5744192A (en) * | 1996-11-08 | 1998-04-28 | Sharp Microelectronics Technology, Inc. | Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS |
US6090960A (en) * | 1997-01-07 | 2000-07-18 | Sharp Laboratories Of America, Inc. | Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same |
US5767301A (en) * | 1997-01-21 | 1998-06-16 | Sharp Microelectronics Technology, Inc. | Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper |
US6130161A (en) * | 1997-05-30 | 2000-10-10 | International Business Machines Corporation | Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity |
US6069068A (en) | 1997-05-30 | 2000-05-30 | International Business Machines Corporation | Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity |
EP0890979A1 (de) | 1997-07-11 | 1999-01-13 | EM Microelectronic-Marin SA | Methode zur Optimierung eines Abscheide- und Ätzverfahrens als Funktion der Struktur des abzuscheidenden un zu ätzenden polykristallinen Films |
US6171661B1 (en) * | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
JP4304547B2 (ja) * | 1998-03-20 | 2009-07-29 | キヤノンアネルバ株式会社 | 枚葉式cvd装置および枚葉式cvd方法 |
JP2002530520A (ja) * | 1998-08-03 | 2002-09-17 | アドバンスド.テクノロジー.マテリアルズ.インコーポレイテッド | ミクロ電子工学素子構造体の製造のための銅前駆組成物及びその形成プロセス |
KR100566905B1 (ko) * | 1998-09-11 | 2006-07-03 | 에이에스엠지니텍코리아 주식회사 | 표면 촉매를 이용한 화학 증착방법_ |
US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
US6046364A (en) * | 1998-12-07 | 2000-04-04 | Air Products And Chemicals, Inc. | Regeneration of metal CVD precursors |
DE10080457T1 (de) | 1999-02-12 | 2001-04-26 | Gelest Inc | CVD-Abscheidung von Wolframnitrid |
US6337148B1 (en) | 1999-05-25 | 2002-01-08 | Advanced Technology Materials, Inc. | Copper source reagent compositions, and method of making and using same for microelectronic device structures |
US6110530A (en) | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
US6291347B1 (en) * | 1999-10-08 | 2001-09-18 | Texas Instruments Incorporated | Method and system for constructing semiconductor devices |
JP3925780B2 (ja) | 1999-12-15 | 2007-06-06 | エー・エス・エムジニテックコリア株式会社 | 触媒及び化学気相蒸着法を用いて銅配線及び薄膜を形成する方法 |
US6589329B1 (en) | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
US6417369B1 (en) | 2000-03-13 | 2002-07-09 | Advanced Technology Materials, Inc. | Pyrazolate copper complexes, and MOCVD of copper using same |
JP3494363B2 (ja) * | 2000-03-17 | 2004-02-09 | セントラル硝子株式会社 | 1,1,1,5,5,5−ヘキサフルオロアセチルアセトンの製造方法 |
US6440494B1 (en) * | 2000-04-05 | 2002-08-27 | Tokyo Electron Limited | In-situ source synthesis for metal CVD |
KR100403454B1 (ko) * | 2000-06-20 | 2003-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
US6576292B2 (en) | 2001-08-13 | 2003-06-10 | Sharp Laboratories Of America, Inc. | Method of forming highly adhesive copper thin films on metal nitride substrates via CVD |
US6509268B1 (en) | 2001-08-27 | 2003-01-21 | Sharp Laboratories Of America, Inc. | Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics |
US6576538B2 (en) * | 2001-08-30 | 2003-06-10 | Micron Technology, Inc. | Technique for high efficiency metalorganic chemical vapor deposition |
US20030064153A1 (en) * | 2001-10-01 | 2003-04-03 | Rajendra Solanki | Method of depositing a metallic film on a substrate |
JP2003188115A (ja) * | 2001-12-17 | 2003-07-04 | Shin Meiwa Ind Co Ltd | 半導体配線形成方法及び装置、半導体デバイス製造方法及び装置、並びにウエハ |
US20040009665A1 (en) * | 2002-06-04 | 2004-01-15 | Applied Materials, Inc. | Deposition of copper films |
US7150789B2 (en) | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
EP1563117B1 (de) * | 2002-11-15 | 2010-01-06 | President And Fellows Of Harvard College | Atomlagenabscheidung (ald) mit hilfe von metallamidinaten |
US9029189B2 (en) * | 2003-11-14 | 2015-05-12 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
US6838573B1 (en) | 2004-01-30 | 2005-01-04 | Air Products And Chemicals, Inc. | Copper CVD precursors with enhanced adhesion properties |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
US20060102895A1 (en) * | 2004-11-16 | 2006-05-18 | Hendrix Bryan C | Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures |
US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
WO2007142700A1 (en) * | 2006-06-02 | 2007-12-13 | Advanced Technology Materials, Inc. | Copper (i) amidinates and guanidinates for forming copper thin films |
GB0616125D0 (en) * | 2006-08-14 | 2006-09-20 | Radiation Watch Ltd | Etch process |
TW200825200A (en) * | 2006-12-05 | 2008-06-16 | Advanced Tech Materials | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
WO2008085426A1 (en) * | 2006-12-28 | 2008-07-17 | Air Products And Chemicals, Inc. | Volatile liquid copper precursors for thin film applications |
US7750173B2 (en) * | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
US8951615B2 (en) | 2011-02-16 | 2015-02-10 | Uchicago Argonne, Llc | Doping control by ALD surface functionalization |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01308804A (ja) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | 膜状超電導体の製造方法 |
KR940002439B1 (ko) * | 1990-03-09 | 1994-03-24 | 니뽄 덴신 덴와 가부시끼가이샤 | 금속 박막 성장방법 및 장치 |
JPH03261609A (ja) * | 1990-03-13 | 1991-11-21 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | Mocvd法による酸化物超電導体の合成方法 |
US5094701A (en) * | 1990-03-30 | 1992-03-10 | Air Products And Chemicals, Inc. | Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same |
US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
US5085731A (en) * | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
-
1993
- 1993-05-18 US US08/064,185 patent/US5322712A/en not_active Ceased
- 1993-11-18 TW TW082109694A patent/TW238341B/zh not_active IP Right Cessation
-
1994
- 1994-05-11 SG SG1995001354A patent/SG46145A1/en unknown
- 1994-05-11 AT AT94107352T patent/ATE156198T1/de not_active IP Right Cessation
- 1994-05-11 EP EP94107352A patent/EP0630988B1/de not_active Expired - Lifetime
- 1994-05-11 DK DK94107352.0T patent/DK0630988T3/da active
- 1994-05-11 DE DE69404564T patent/DE69404564T2/de not_active Expired - Lifetime
- 1994-05-11 JP JP6121810A patent/JP2641700B2/ja not_active Expired - Fee Related
- 1994-05-17 KR KR1019940010749A patent/KR960011246B1/ko not_active IP Right Cessation
-
1996
- 1996-06-20 US US08/667,254 patent/USRE35614E/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0748672A (ja) | 1995-02-21 |
DE69404564D1 (de) | 1997-09-04 |
EP0630988A1 (de) | 1994-12-28 |
SG46145A1 (en) | 1998-02-20 |
DK0630988T3 (da) | 1997-09-01 |
KR960011246B1 (ko) | 1996-08-21 |
EP0630988B1 (de) | 1997-07-30 |
DE69404564T2 (de) | 1997-12-04 |
TW238341B (en) | 1995-01-11 |
USRE35614E (en) | 1997-09-23 |
JP2641700B2 (ja) | 1997-08-20 |
US5322712A (en) | 1994-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
REN | Ceased due to non-payment of the annual fee |