SG46145A1 - Process for improved quality of cvd copper films - Google Patents
Process for improved quality of cvd copper filmsInfo
- Publication number
- SG46145A1 SG46145A1 SG1995001354A SG1995001354A SG46145A1 SG 46145 A1 SG46145 A1 SG 46145A1 SG 1995001354 A SG1995001354 A SG 1995001354A SG 1995001354 A SG1995001354 A SG 1995001354A SG 46145 A1 SG46145 A1 SG 46145A1
- Authority
- SG
- Singapore
- Prior art keywords
- introducing
- fluoroaryl
- alkyl
- copper films
- cvd
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/064,185 US5322712A (en) | 1993-05-18 | 1993-05-18 | Process for improved quality of CVD copper films |
Publications (1)
Publication Number | Publication Date |
---|---|
SG46145A1 true SG46145A1 (en) | 1998-02-20 |
Family
ID=22054156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1995001354A SG46145A1 (en) | 1993-05-18 | 1994-05-11 | Process for improved quality of cvd copper films |
Country Status (9)
Country | Link |
---|---|
US (2) | US5322712A (de) |
EP (1) | EP0630988B1 (de) |
JP (1) | JP2641700B2 (de) |
KR (1) | KR960011246B1 (de) |
AT (1) | ATE156198T1 (de) |
DE (1) | DE69404564T2 (de) |
DK (1) | DK0630988T3 (de) |
SG (1) | SG46145A1 (de) |
TW (1) | TW238341B (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0155572B1 (ko) * | 1991-05-28 | 1998-12-01 | 이노우에 아키라 | 감압처리 시스템 및 감압처리 방법 |
JP3488735B2 (ja) * | 1994-03-03 | 2004-01-19 | 三菱電機株式会社 | 半導体装置 |
JP2622671B2 (ja) * | 1995-03-07 | 1997-06-18 | 株式会社トリケミカル研究所 | 銅のβ−ジケトネート錯体の製造方法 |
US5744192A (en) * | 1996-11-08 | 1998-04-28 | Sharp Microelectronics Technology, Inc. | Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS |
US6090960A (en) * | 1997-01-07 | 2000-07-18 | Sharp Laboratories Of America, Inc. | Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same |
US5767301A (en) * | 1997-01-21 | 1998-06-16 | Sharp Microelectronics Technology, Inc. | Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper |
US6069068A (en) * | 1997-05-30 | 2000-05-30 | International Business Machines Corporation | Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity |
US6130161A (en) | 1997-05-30 | 2000-10-10 | International Business Machines Corporation | Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity |
EP0890979A1 (de) * | 1997-07-11 | 1999-01-13 | EM Microelectronic-Marin SA | Methode zur Optimierung eines Abscheide- und Ätzverfahrens als Funktion der Struktur des abzuscheidenden un zu ätzenden polykristallinen Films |
US6171661B1 (en) * | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
JP4304547B2 (ja) * | 1998-03-20 | 2009-07-29 | キヤノンアネルバ株式会社 | 枚葉式cvd装置および枚葉式cvd方法 |
US6102993A (en) * | 1998-08-03 | 2000-08-15 | Advanced Technology Materials, Inc. | Copper precursor composition and process for manufacture of microelectronic device structures |
KR100566905B1 (ko) * | 1998-09-11 | 2006-07-03 | 에이에스엠지니텍코리아 주식회사 | 표면 촉매를 이용한 화학 증착방법_ |
US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
US6046364A (en) * | 1998-12-07 | 2000-04-04 | Air Products And Chemicals, Inc. | Regeneration of metal CVD precursors |
DE10080457T1 (de) | 1999-02-12 | 2001-04-26 | Gelest Inc | CVD-Abscheidung von Wolframnitrid |
US6337148B1 (en) | 1999-05-25 | 2002-01-08 | Advanced Technology Materials, Inc. | Copper source reagent compositions, and method of making and using same for microelectronic device structures |
US6110530A (en) | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
US6291347B1 (en) * | 1999-10-08 | 2001-09-18 | Texas Instruments Incorporated | Method and system for constructing semiconductor devices |
WO2001045149A1 (en) * | 1999-12-15 | 2001-06-21 | Genitech Co., Ltd. | Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst |
US6589329B1 (en) | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
US6417369B1 (en) | 2000-03-13 | 2002-07-09 | Advanced Technology Materials, Inc. | Pyrazolate copper complexes, and MOCVD of copper using same |
JP3494363B2 (ja) * | 2000-03-17 | 2004-02-09 | セントラル硝子株式会社 | 1,1,1,5,5,5−ヘキサフルオロアセチルアセトンの製造方法 |
US6440494B1 (en) * | 2000-04-05 | 2002-08-27 | Tokyo Electron Limited | In-situ source synthesis for metal CVD |
KR100403454B1 (ko) * | 2000-06-20 | 2003-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
US6576292B2 (en) | 2001-08-13 | 2003-06-10 | Sharp Laboratories Of America, Inc. | Method of forming highly adhesive copper thin films on metal nitride substrates via CVD |
US6509268B1 (en) | 2001-08-27 | 2003-01-21 | Sharp Laboratories Of America, Inc. | Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics |
US6576538B2 (en) * | 2001-08-30 | 2003-06-10 | Micron Technology, Inc. | Technique for high efficiency metalorganic chemical vapor deposition |
US20030064153A1 (en) * | 2001-10-01 | 2003-04-03 | Rajendra Solanki | Method of depositing a metallic film on a substrate |
JP2003188115A (ja) * | 2001-12-17 | 2003-07-04 | Shin Meiwa Ind Co Ltd | 半導体配線形成方法及び装置、半導体デバイス製造方法及び装置、並びにウエハ |
US20040009665A1 (en) * | 2002-06-04 | 2004-01-15 | Applied Materials, Inc. | Deposition of copper films |
US7150789B2 (en) | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
EP1563117B1 (de) * | 2002-11-15 | 2010-01-06 | President And Fellows Of Harvard College | Atomlagenabscheidung (ald) mit hilfe von metallamidinaten |
US9029189B2 (en) * | 2003-11-14 | 2015-05-12 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
US6838573B1 (en) | 2004-01-30 | 2005-01-04 | Air Products And Chemicals, Inc. | Copper CVD precursors with enhanced adhesion properties |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
US20060102895A1 (en) * | 2004-11-16 | 2006-05-18 | Hendrix Bryan C | Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures |
US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
WO2007142700A1 (en) * | 2006-06-02 | 2007-12-13 | Advanced Technology Materials, Inc. | Copper (i) amidinates and guanidinates for forming copper thin films |
GB0616125D0 (en) * | 2006-08-14 | 2006-09-20 | Radiation Watch Ltd | Etch process |
WO2008069821A1 (en) * | 2006-12-05 | 2008-06-12 | Advanced Technology Materials, Inc. | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
WO2008085426A1 (en) * | 2006-12-28 | 2008-07-17 | Air Products And Chemicals, Inc. | Volatile liquid copper precursors for thin film applications |
US7750173B2 (en) * | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
US8951615B2 (en) | 2011-02-16 | 2015-02-10 | Uchicago Argonne, Llc | Doping control by ALD surface functionalization |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01308804A (ja) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | 膜状超電導体の製造方法 |
KR940002439B1 (ko) * | 1990-03-09 | 1994-03-24 | 니뽄 덴신 덴와 가부시끼가이샤 | 금속 박막 성장방법 및 장치 |
JPH03261609A (ja) * | 1990-03-13 | 1991-11-21 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | Mocvd法による酸化物超電導体の合成方法 |
US5094701A (en) * | 1990-03-30 | 1992-03-10 | Air Products And Chemicals, Inc. | Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same |
US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
US5085731A (en) * | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
-
1993
- 1993-05-18 US US08/064,185 patent/US5322712A/en not_active Ceased
- 1993-11-18 TW TW082109694A patent/TW238341B/zh not_active IP Right Cessation
-
1994
- 1994-05-11 JP JP6121810A patent/JP2641700B2/ja not_active Expired - Fee Related
- 1994-05-11 DK DK94107352.0T patent/DK0630988T3/da active
- 1994-05-11 EP EP94107352A patent/EP0630988B1/de not_active Expired - Lifetime
- 1994-05-11 DE DE69404564T patent/DE69404564T2/de not_active Expired - Lifetime
- 1994-05-11 AT AT94107352T patent/ATE156198T1/de not_active IP Right Cessation
- 1994-05-11 SG SG1995001354A patent/SG46145A1/en unknown
- 1994-05-17 KR KR1019940010749A patent/KR960011246B1/ko not_active IP Right Cessation
-
1996
- 1996-06-20 US US08/667,254 patent/USRE35614E/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
USRE35614E (en) | 1997-09-23 |
DE69404564D1 (de) | 1997-09-04 |
DE69404564T2 (de) | 1997-12-04 |
US5322712A (en) | 1994-06-21 |
TW238341B (en) | 1995-01-11 |
EP0630988B1 (de) | 1997-07-30 |
KR960011246B1 (ko) | 1996-08-21 |
JP2641700B2 (ja) | 1997-08-20 |
DK0630988T3 (da) | 1997-09-01 |
EP0630988A1 (de) | 1994-12-28 |
ATE156198T1 (de) | 1997-08-15 |
JPH0748672A (ja) | 1995-02-21 |
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