DE60139912D1 - Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten mit Hydroxylradikalen - Google Patents

Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten mit Hydroxylradikalen

Info

Publication number
DE60139912D1
DE60139912D1 DE60139912T DE60139912T DE60139912D1 DE 60139912 D1 DE60139912 D1 DE 60139912D1 DE 60139912 T DE60139912 T DE 60139912T DE 60139912 T DE60139912 T DE 60139912T DE 60139912 D1 DE60139912 D1 DE 60139912D1
Authority
DE
Germany
Prior art keywords
precursor
hydroxyl radicals
semiconductor substrates
hydroxyl
treating semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139912T
Other languages
English (en)
Inventor
Himanshu Pokhama
Srinivas D Nemani
Francimar Campana
Li-Qun Xia
Shankar Chandran
Chen-An Chen
Ellie Yieh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60139912D1 publication Critical patent/DE60139912D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE60139912T 2000-04-21 2001-04-20 Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten mit Hydroxylradikalen Expired - Lifetime DE60139912D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/557,079 US6596343B1 (en) 2000-04-21 2000-04-21 Method and apparatus for processing semiconductor substrates with hydroxyl radicals

Publications (1)

Publication Number Publication Date
DE60139912D1 true DE60139912D1 (de) 2009-10-29

Family

ID=24223973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139912T Expired - Lifetime DE60139912D1 (de) 2000-04-21 2001-04-20 Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten mit Hydroxylradikalen

Country Status (6)

Country Link
US (2) US6596343B1 (de)
EP (1) EP1148150B1 (de)
JP (1) JP4739577B2 (de)
KR (1) KR100715074B1 (de)
AT (1) ATE443164T1 (de)
DE (1) DE60139912D1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals
JP2002110611A (ja) * 2000-10-04 2002-04-12 Texas Instr Japan Ltd 半導体ウェハの洗浄方法及び装置
US20020127763A1 (en) * 2000-12-28 2002-09-12 Mohamed Arafa Sidewall spacers and methods of making same
US8749054B2 (en) 2010-06-24 2014-06-10 L. Pierre de Rochemont Semiconductor carrier with vertical power FET module
EP2249413A3 (de) * 2002-04-01 2011-02-02 Konica Corporation Träger und organisches elektrolumineszentes Bauelement mit einem solchen Träger
EP2426785A2 (de) 2004-10-01 2012-03-07 L. Pierre De Rochemont Keramisches Antennenmodul und Herstellungsverfahren dafür
US8163087B2 (en) * 2005-03-31 2012-04-24 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
JP4808436B2 (ja) * 2005-05-18 2011-11-02 株式会社神戸製鋼所 機能膜形成方法
US8350657B2 (en) 2005-06-30 2013-01-08 Derochemont L Pierre Power management module and method of manufacture
CN102255143B (zh) 2005-06-30 2014-08-20 L.皮尔·德罗什蒙 电子元件及制造方法
JP2007194582A (ja) * 2005-12-20 2007-08-02 Tokyo Electron Ltd 高誘電体薄膜の改質方法及び半導体装置
US8354294B2 (en) 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
US7763917B2 (en) * 2006-01-24 2010-07-27 De Rochemont L Pierre Photovoltaic devices with silicon dioxide encapsulation layer and method to make same
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US20080020549A1 (en) * 2006-07-20 2008-01-24 Qc Solutions, Inc. Method and apparatus for forming an oxide layer on semiconductors
US20090305515A1 (en) * 2008-06-06 2009-12-10 Dustin Ho Method and apparatus for uv curing with water vapor
US7959598B2 (en) 2008-08-20 2011-06-14 Asante Solutions, Inc. Infusion pump systems and methods
US8952858B2 (en) 2009-06-17 2015-02-10 L. Pierre de Rochemont Frequency-selective dipole antennas
US8922347B1 (en) 2009-06-17 2014-12-30 L. Pierre de Rochemont R.F. energy collection circuit for wireless devices
US20110151677A1 (en) * 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8465587B2 (en) * 2009-12-30 2013-06-18 Cbl Technologies, Inc. Modern hydride vapor-phase epitaxy system and methods
KR101143631B1 (ko) * 2010-04-30 2012-05-09 에스케이하이닉스 주식회사 소자분리층을 포함하는 반도체 소자 형성 방법
US8552708B2 (en) 2010-06-02 2013-10-08 L. Pierre de Rochemont Monolithic DC/DC power management module with surface FET
US9023493B2 (en) 2010-07-13 2015-05-05 L. Pierre de Rochemont Chemically complex ablative max-phase material and method of manufacture
EP2609626B1 (de) 2010-08-23 2024-04-03 L. Pierre De Rochemont Power-fet mit einem resonanz-transistor-gate
EP2636069B1 (de) 2010-11-03 2021-07-07 L. Pierre De Rochemont Halbleiterchip mit trägern mit monolithisch integrierten quantumspunktvorrichtungen und herstellungsverfahren dafür
DE102011001642B4 (de) * 2011-03-29 2014-12-31 Universität Bremen Verfahren zum Herstellen einer Polymerschicht
KR101373061B1 (ko) * 2013-03-04 2014-03-17 백경림 지퍼가 구비된 모자
US9561324B2 (en) 2013-07-19 2017-02-07 Bigfoot Biomedical, Inc. Infusion pump system and method
JP6354539B2 (ja) * 2014-11-25 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、記憶媒体
KR101727259B1 (ko) 2015-03-18 2017-04-17 연세대학교 산학협력단 산화물 박막 형성 방법 및 산화물 박막 형성 장치
TWI570263B (zh) * 2015-08-10 2017-02-11 炬力奈米科技有限公司 光輔助原子層沉積方法
EP3374905A1 (de) 2016-01-13 2018-09-19 Bigfoot Biomedical, Inc. Benutzerschnittstelle für diabetesmanagementsystem
WO2017124006A1 (en) 2016-01-14 2017-07-20 Bigfoot Biomedical, Inc. Adjusting insulin delivery rates
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
EP3568859A1 (de) 2017-01-13 2019-11-20 Bigfoot Biomedical, Inc. Insulinverabreichungsverfahren, -systeme und -vorrichtungen
EP3568862A1 (de) 2017-01-13 2019-11-20 Bigfoot Biomedical, Inc. System und verfahren zur anpassung der insulinabgabe
KR101987705B1 (ko) * 2017-02-28 2019-06-11 (주)엔피홀딩스 Uv 램프를 이용한 기판 세정 노즐
USD874471S1 (en) 2017-06-08 2020-02-04 Insulet Corporation Display screen with a graphical user interface
USD928199S1 (en) 2018-04-02 2021-08-17 Bigfoot Biomedical, Inc. Medication delivery device with icons
USD920343S1 (en) 2019-01-09 2021-05-25 Bigfoot Biomedical, Inc. Display screen or portion thereof with graphical user interface associated with insulin delivery
USD977502S1 (en) 2020-06-09 2023-02-07 Insulet Corporation Display screen with graphical user interface

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279705A (en) * 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
US5126111A (en) * 1990-12-05 1992-06-30 Nutech Energy Systems Inc. Fluid purification
JP2989063B2 (ja) * 1991-12-12 1999-12-13 キヤノン株式会社 薄膜形成装置および薄膜形成方法
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2870307B2 (ja) * 1992-07-10 1999-03-17 日本電気株式会社 移動通信制御局および多重接続方式
JPH086181B2 (ja) * 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
US5395522A (en) * 1993-02-23 1995-03-07 Anatel Corporation Apparatus for removal of organic material from water
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
FR2734402B1 (fr) * 1995-05-15 1997-07-18 Brouquet Pierre Procede pour l'isolement electrique en micro-electronique, applicable aux cavites etroites, par depot d'oxyde a l'etat visqueux et dispositif correspondant
JPH09232296A (ja) * 1996-02-23 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
EP0957511B1 (de) * 1996-02-23 2007-04-04 Ebara Corporation Verfahren zur chemischen gasphasenabscheidung
US5792369A (en) * 1996-04-04 1998-08-11 Johnson; Dennis E. J. Apparatus and processes for non-chemical plasma ion disinfection of water
US5710079A (en) * 1996-05-24 1998-01-20 Lsi Logic Corporation Method and apparatus for forming dielectric films
JPH10321610A (ja) * 1997-03-19 1998-12-04 Fujitsu Ltd 半導体装置の製造方法
US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
FI108375B (fi) * 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
US6200387B1 (en) * 1998-10-30 2001-03-13 Dangsheng P. E. Ni Method and system for processing substrates using nebulized chemicals created by heated chemical gases
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals

Also Published As

Publication number Publication date
KR100715074B1 (ko) 2007-05-07
ATE443164T1 (de) 2009-10-15
JP2002064095A (ja) 2002-02-28
EP1148150A2 (de) 2001-10-24
JP4739577B2 (ja) 2011-08-03
EP1148150A3 (de) 2006-06-28
US6596343B1 (en) 2003-07-22
EP1148150B1 (de) 2009-09-16
US20030221621A1 (en) 2003-12-04
KR20010098803A (ko) 2001-11-08

Similar Documents

Publication Publication Date Title
DE60139912D1 (de) Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten mit Hydroxylradikalen
ATE156198T1 (de) Verfahren zum herstellen verbesserter cvd kupferfilme
US4702936A (en) Gas-phase growth process
KR930001347A (ko) 산화 규소 막을 형성시키기 위한 화학 증착법
ATE64237T1 (de) Verfahren zum herstellen von mit bor und phosphor dotierten siliziumoxid-schichten fuer integrierte halbleiterschaltungen.
DE59304913D1 (de) Verfahren und vorrichtung zur biologischen behandlung von organisch belastetem abwasser und organischem abfall
ATE374936T1 (de) Verfahren und vorrichtung zur überwachung chemischer prozesse
ATE148431T1 (de) Verfahren und vorrichtung zur vorformherstellung für quarzglas-lichtwellenleiter
ATE139218T1 (de) Verfahren und vorrichtung zur behandlung von abfallstoffen, insbesondere von organischen gastronomieabfällen
DE3784541D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
ATE326556T1 (de) Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen
KR960026408A (ko) TiN막의 형성 방법
DE60021302D1 (de) Verfahren und Vorrichtung zur Behandlung eines Werkstoffes mit elektromagnetischer Strahlung in einer kontrollierten Atmosphäre
ATE151670T1 (de) Sperrfilm und verfahren zu seiner herstellung
DE3686571D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
ATE201030T1 (de) Verfahren zum chemischen modifizieren von alkylgruppenhaltigen thermoplasten
ATE342268T1 (de) Verfahren zur herstellung von aminoalkylsilanen
ATE400891T1 (de) Verfahren zur ausbildung einer silizium- epitaxialschicht
JPS62235295A (ja) ダイヤモンドの合成法
DE3784547D1 (de) Herstellungsverfahren einer niedergeschlagenen schicht.
ATE275646T1 (de) Vorrichtung und verfahren zur plasmagestützten oberflächenbehandlung von substraten im vakuum
JPS6243132A (ja) プラズマ処理方法
ATE134070T1 (de) Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung
ATE171081T1 (de) Verfahren zum chemischen modifizieren von alkylgruppenhaltigen flüssigkeiten
CY1109586T1 (el) Επεξεργασια λιγνοκυτταρινουχων υποστρωματων με οζον

Legal Events

Date Code Title Description
8364 No opposition during term of opposition