ATE150491T1 - Verfahren zur schnellen und schonenden reinigung von insbesondere beim abscheiden und ätzen von schichten auf siliziumsubstraten verwendeten reaktionskammern durch plasmaätzen - Google Patents

Verfahren zur schnellen und schonenden reinigung von insbesondere beim abscheiden und ätzen von schichten auf siliziumsubstraten verwendeten reaktionskammern durch plasmaätzen

Info

Publication number
ATE150491T1
ATE150491T1 AT92121509T AT92121509T ATE150491T1 AT E150491 T1 ATE150491 T1 AT E150491T1 AT 92121509 T AT92121509 T AT 92121509T AT 92121509 T AT92121509 T AT 92121509T AT E150491 T1 ATE150491 T1 AT E150491T1
Authority
AT
Austria
Prior art keywords
etching
depositing
layers
silicon substrates
reaction chambers
Prior art date
Application number
AT92121509T
Other languages
German (de)
English (en)
Inventor
Zvonimir Gabric
Alexander Dr Dipl Gschwandtner
Oswald Dr Dipl-Chemik Spindler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of ATE150491T1 publication Critical patent/ATE150491T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
AT92121509T 1992-01-27 1992-12-17 Verfahren zur schnellen und schonenden reinigung von insbesondere beim abscheiden und ätzen von schichten auf siliziumsubstraten verwendeten reaktionskammern durch plasmaätzen ATE150491T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4202158A DE4202158C1 (enExample) 1992-01-27 1992-01-27

Publications (1)

Publication Number Publication Date
ATE150491T1 true ATE150491T1 (de) 1997-04-15

Family

ID=6450333

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92121509T ATE150491T1 (de) 1992-01-27 1992-12-17 Verfahren zur schnellen und schonenden reinigung von insbesondere beim abscheiden und ätzen von schichten auf siliziumsubstraten verwendeten reaktionskammern durch plasmaätzen

Country Status (5)

Country Link
US (1) US5281302A (enExample)
EP (1) EP0553469B1 (enExample)
JP (1) JPH05267256A (enExample)
AT (1) ATE150491T1 (enExample)
DE (2) DE4202158C1 (enExample)

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US6238582B1 (en) * 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
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US11791141B2 (en) * 2020-07-29 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for residual gas analysis
JP7393409B2 (ja) * 2021-12-24 2023-12-06 株式会社Kokusai Electric クリーニング方法、半導体装置の製造方法、プログラム及び基板処理装置

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DE69128050D1 (de) * 1990-06-29 1997-12-04 Applied Materials Inc Zweistufiges Selbstreinigungsverfahren einer Reaktionskammer

Also Published As

Publication number Publication date
EP0553469A3 (en) 1994-11-23
DE4202158C1 (enExample) 1993-07-22
JPH05267256A (ja) 1993-10-15
EP0553469B1 (de) 1997-03-19
US5281302A (en) 1994-01-25
DE59208239D1 (de) 1997-04-24
EP0553469A2 (de) 1993-08-04

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