ATE120033T1 - Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid. - Google Patents

Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid.

Info

Publication number
ATE120033T1
ATE120033T1 AT90901362T AT90901362T ATE120033T1 AT E120033 T1 ATE120033 T1 AT E120033T1 AT 90901362 T AT90901362 T AT 90901362T AT 90901362 T AT90901362 T AT 90901362T AT E120033 T1 ATE120033 T1 AT E120033T1
Authority
AT
Austria
Prior art keywords
silicon carbide
epitaxial layer
ultra
high temperature
rectifier diode
Prior art date
Application number
AT90901362T
Other languages
English (en)
Inventor
John A Edmond
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26962377&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE120033(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Research Inc filed Critical Cree Research Inc
Application granted granted Critical
Publication of ATE120033T1 publication Critical patent/ATE120033T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thermistors And Varistors (AREA)
  • Ceramic Products (AREA)
  • Recrystallisation Techniques (AREA)
AT90901362T 1988-12-14 1989-12-13 Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid. ATE120033T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28403588A 1988-12-14 1988-12-14
US40369089A 1989-09-06 1989-09-06

Publications (1)

Publication Number Publication Date
ATE120033T1 true ATE120033T1 (de) 1995-04-15

Family

ID=26962377

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90901362T ATE120033T1 (de) 1988-12-14 1989-12-13 Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid.

Country Status (9)

Country Link
EP (1) EP0449951B1 (de)
JP (1) JP3269625B2 (de)
KR (1) KR0150793B1 (de)
CN (1) CN1044737A (de)
AT (1) ATE120033T1 (de)
AU (1) AU4844490A (de)
CA (1) CA2005384A1 (de)
DE (1) DE68921768T2 (de)
WO (1) WO1990007192A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9502249D0 (sv) * 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
JP4626893B2 (ja) * 1996-08-16 2011-02-09 クリー、インコーポレイテッド ＳｉＣから構成された半導体層を有するバイポーラ半導体デバイスおよびＳｉＣから構成された半導体デバイスを製造する方法
SE9702220D0 (sv) * 1997-06-11 1997-06-11 Abb Research Ltd A semiconductor device with a junction termination and a method for production thereof
JP5225549B2 (ja) * 2006-03-15 2013-07-03 日本碍子株式会社 半導体素子
US7339776B1 (en) * 2006-12-12 2008-03-04 Pratt & Whitney Rocketdyne, Inc. Silicon carbide diode voltage limiter
US8681518B2 (en) * 2009-07-21 2014-03-25 Cree, Inc. High speed rectifier circuit
US9281388B2 (en) 2011-07-15 2016-03-08 Infineon Technologies Americas Corp. Composite semiconductor device with a SOI substrate having an integrated diode
US9087812B2 (en) 2011-07-15 2015-07-21 International Rectifier Corporation Composite semiconductor device with integrated diode
CN102496572A (zh) * 2011-12-29 2012-06-13 江苏宏微科技有限公司 快恢复外延型二极管及其制备方法
KR101976600B1 (ko) * 2012-06-28 2019-05-09 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
CN105405895B (zh) * 2015-12-17 2018-10-02 扬州国宇电子有限公司 一种低存储电荷快恢复二极管芯片
CN111211160B (zh) * 2020-01-15 2021-05-14 电子科技大学 一种垂直GaN功率二极管
CN112151621A (zh) * 2020-10-14 2020-12-29 济南新芯微电子有限公司 一种大电流低漏电碳化硅二极管芯片及其制作方法
CN116314252B (zh) * 2022-11-23 2023-11-07 苏州龙驰半导体科技有限公司 Vdmos器件及提升sic vdmos器件的击穿电压的方法
CN117059670B (zh) * 2023-10-12 2024-01-16 深圳市冠禹半导体有限公司 一种碳化硅二极管及其制造方法

Also Published As

Publication number Publication date
EP0449951B1 (de) 1995-03-15
CA2005384A1 (en) 1990-06-14
WO1990007192A1 (en) 1990-06-28
KR0150793B1 (ko) 1998-10-01
JPH04502536A (ja) 1992-05-07
DE68921768D1 (de) 1995-04-20
JP3269625B2 (ja) 2002-03-25
KR910700545A (ko) 1991-03-15
AU4844490A (en) 1990-07-10
DE68921768T2 (de) 1995-11-09
CN1044737A (zh) 1990-08-15
EP0449951A1 (de) 1991-10-09

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Legal Events

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