DE68921768D1 - Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid. - Google Patents
Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid.Info
- Publication number
- DE68921768D1 DE68921768D1 DE68921768T DE68921768T DE68921768D1 DE 68921768 D1 DE68921768 D1 DE 68921768D1 DE 68921768 T DE68921768 T DE 68921768T DE 68921768 T DE68921768 T DE 68921768T DE 68921768 D1 DE68921768 D1 DE 68921768D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- epitaxial layer
- high temperature
- built
- rectifier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 5
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Products (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28403588A | 1988-12-14 | 1988-12-14 | |
| US40369089A | 1989-09-06 | 1989-09-06 | |
| PCT/US1989/005554 WO1990007192A1 (en) | 1988-12-14 | 1989-12-13 | Ultra-fast high temperature rectifying diode formed in silicon carbide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68921768D1 true DE68921768D1 (de) | 1995-04-20 |
| DE68921768T2 DE68921768T2 (de) | 1995-11-09 |
Family
ID=26962377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE68921768T Expired - Lifetime DE68921768T2 (de) | 1988-12-14 | 1989-12-13 | Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid. |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0449951B1 (de) |
| JP (1) | JP3269625B2 (de) |
| KR (1) | KR0150793B1 (de) |
| CN (1) | CN1044737A (de) |
| AT (1) | ATE120033T1 (de) |
| AU (1) | AU4844490A (de) |
| CA (1) | CA2005384A1 (de) |
| DE (1) | DE68921768T2 (de) |
| WO (1) | WO1990007192A1 (de) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE9502249D0 (sv) * | 1995-06-21 | 1995-06-21 | Abb Research Ltd | Converter circuitry having at least one switching device and circuit module |
| JP4626893B2 (ja) * | 1996-08-16 | 2011-02-09 | クリー、インコーポレイテッド | ＳｉＣから構成された半導体層を有するバイポーラ半導体デバイスおよびＳｉＣから構成された半導体デバイスを製造する方法 |
| SE9702220D0 (sv) * | 1997-06-11 | 1997-06-11 | Abb Research Ltd | A semiconductor device with a junction termination and a method for production thereof |
| JP5225549B2 (ja) | 2006-03-15 | 2013-07-03 | 日本碍子株式会社 | 半導体素子 |
| US7339776B1 (en) * | 2006-12-12 | 2008-03-04 | Pratt & Whitney Rocketdyne, Inc. | Silicon carbide diode voltage limiter |
| US8681518B2 (en) * | 2009-07-21 | 2014-03-25 | Cree, Inc. | High speed rectifier circuit |
| US9281388B2 (en) * | 2011-07-15 | 2016-03-08 | Infineon Technologies Americas Corp. | Composite semiconductor device with a SOI substrate having an integrated diode |
| US9087812B2 (en) | 2011-07-15 | 2015-07-21 | International Rectifier Corporation | Composite semiconductor device with integrated diode |
| CN102496572A (zh) * | 2011-12-29 | 2012-06-13 | 江苏宏微科技有限公司 | 快恢复外延型二极管及其制备方法 |
| KR101976600B1 (ko) * | 2012-06-28 | 2019-05-09 | 엘지이노텍 주식회사 | 탄화규소 에피 웨이퍼 및 이의 제조 방법 |
| CN105405895B (zh) * | 2015-12-17 | 2018-10-02 | 扬州国宇电子有限公司 | 一种低存储电荷快恢复二极管芯片 |
| CN111211160B (zh) * | 2020-01-15 | 2021-05-14 | 电子科技大学 | 一种垂直GaN功率二极管 |
| CN112151621A (zh) * | 2020-10-14 | 2020-12-29 | 济南新芯微电子有限公司 | 一种大电流低漏电碳化硅二极管芯片及其制作方法 |
| CN116314252B (zh) * | 2022-11-23 | 2023-11-07 | 苏州龙驰半导体科技有限公司 | Vdmos器件及提升sic vdmos器件的击穿电压的方法 |
| CN117059670B (zh) * | 2023-10-12 | 2024-01-16 | 深圳市冠禹半导体有限公司 | 一种碳化硅二极管及其制造方法 |
-
1989
- 1989-12-13 DE DE68921768T patent/DE68921768T2/de not_active Expired - Lifetime
- 1989-12-13 KR KR1019900701777A patent/KR0150793B1/ko not_active IP Right Cessation
- 1989-12-13 JP JP50222490A patent/JP3269625B2/ja not_active Expired - Lifetime
- 1989-12-13 AT AT90901362T patent/ATE120033T1/de not_active IP Right Cessation
- 1989-12-13 AU AU48444/90A patent/AU4844490A/en not_active Abandoned
- 1989-12-13 WO PCT/US1989/005554 patent/WO1990007192A1/en active IP Right Grant
- 1989-12-13 CA CA002005384A patent/CA2005384A1/en not_active Abandoned
- 1989-12-13 EP EP90901362A patent/EP0449951B1/de not_active Expired - Lifetime
- 1989-12-14 CN CN89109809A patent/CN1044737A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA2005384A1 (en) | 1990-06-14 |
| DE68921768T2 (de) | 1995-11-09 |
| KR0150793B1 (ko) | 1998-10-01 |
| JPH04502536A (ja) | 1992-05-07 |
| ATE120033T1 (de) | 1995-04-15 |
| EP0449951A1 (de) | 1991-10-09 |
| EP0449951B1 (de) | 1995-03-15 |
| KR910700545A (ko) | 1991-03-15 |
| WO1990007192A1 (en) | 1990-06-28 |
| AU4844490A (en) | 1990-07-10 |
| JP3269625B2 (ja) | 2002-03-25 |
| CN1044737A (zh) | 1990-08-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8363 | Opposition against the patent | ||
| 8365 | Fully valid after opposition proceedings |