ATE111969T1 - Reaktionskammer und chemischer dampfniederschlag. - Google Patents

Reaktionskammer und chemischer dampfniederschlag.

Info

Publication number
ATE111969T1
ATE111969T1 AT88906445T AT88906445T ATE111969T1 AT E111969 T1 ATE111969 T1 AT E111969T1 AT 88906445 T AT88906445 T AT 88906445T AT 88906445 T AT88906445 T AT 88906445T AT E111969 T1 ATE111969 T1 AT E111969T1
Authority
AT
Austria
Prior art keywords
susceptor
reaction chamber
reactant gas
chamber
wall
Prior art date
Application number
AT88906445T
Other languages
English (en)
Inventor
Albert E Ovias
Original Assignee
Advanced Semiconductor Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Mat filed Critical Advanced Semiconductor Mat
Application granted granted Critical
Publication of ATE111969T1 publication Critical patent/ATE111969T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT88906445T 1987-06-24 1988-06-17 Reaktionskammer und chemischer dampfniederschlag. ATE111969T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/065,945 US4846102A (en) 1987-06-24 1987-06-24 Reaction chambers for CVD systems

Publications (1)

Publication Number Publication Date
ATE111969T1 true ATE111969T1 (de) 1994-10-15

Family

ID=22066217

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88906445T ATE111969T1 (de) 1987-06-24 1988-06-17 Reaktionskammer und chemischer dampfniederschlag.

Country Status (6)

Country Link
US (1) US4846102A (de)
EP (1) EP0368900B1 (de)
JP (1) JP2679833B2 (de)
AT (1) ATE111969T1 (de)
DE (1) DE3851627T2 (de)
WO (1) WO1988010324A1 (de)

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DE10055182A1 (de) 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6923821B2 (en) * 2001-02-28 2005-08-02 Theodore Wortrich Microkeratome blades and methods of making
US7316966B2 (en) * 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
US6971835B2 (en) * 2001-12-21 2005-12-06 Sumitomo Mitsubishi Silicon Corporation Vapor-phase epitaxial growth method
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US7163587B2 (en) * 2002-02-08 2007-01-16 Axcelis Technologies, Inc. Reactor assembly and processing method
KR100473806B1 (ko) * 2002-09-28 2005-03-10 한국전자통신연구원 유기물 박막 및 유기물 소자를 위한 대면적 유기물 기상증착 장치 및 제조 방법
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JP2008546078A (ja) * 2005-05-23 2008-12-18 スリーエム イノベイティブ プロパティズ カンパニー 所望の質量重量特性を有する液体を放出するためのマニホールド及びその設計方法
KR101265364B1 (ko) * 2005-05-23 2013-05-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 보조 매니폴드로부터의 유체 유동을 이용한 중합체성재료의 멜트블로잉을 위한 방법 및 장치
US20060288933A1 (en) * 2005-06-27 2006-12-28 Arima Computer Corporation Chemical vapor deposition reactor
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
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US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
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CN102203910B (zh) * 2008-11-07 2014-12-10 Asm美国公司 反应室
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JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
US9196471B1 (en) 2012-06-01 2015-11-24 Yen Fui Choo Scanner for wafers, method for using the scanner, and components of the scanner
TWI470105B (zh) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
CN109338464A (zh) * 2018-11-09 2019-02-15 浙江求是半导体设备有限公司 一种用于外延生长系统的气体注射装置
CN112981371B (zh) * 2021-02-03 2023-05-30 上海大学绍兴研究院 一种化学气相沉积模具

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EP0017359B1 (de) * 1979-03-20 1984-08-01 Matsushita Electric Industrial Co., Ltd. Sensorvorrichtung des keramischen Typs
JPS57198620A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
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JPS622524A (ja) * 1985-06-27 1987-01-08 Matsushita Electric Ind Co Ltd 気相成長装置

Also Published As

Publication number Publication date
DE3851627D1 (de) 1994-10-27
US4846102A (en) 1989-07-11
EP0368900A1 (de) 1990-05-23
JP2679833B2 (ja) 1997-11-19
DE3851627T2 (de) 1995-04-27
JPH03500064A (ja) 1991-01-10
WO1988010324A1 (en) 1988-12-29
EP0368900A4 (de) 1989-10-16
EP0368900B1 (de) 1994-09-21

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