GB1366101A - Apparatus and process for continuously manufacturing whisker crystals - Google Patents

Apparatus and process for continuously manufacturing whisker crystals

Info

Publication number
GB1366101A
GB1366101A GB4848571A GB4848571A GB1366101A GB 1366101 A GB1366101 A GB 1366101A GB 4848571 A GB4848571 A GB 4848571A GB 4848571 A GB4848571 A GB 4848571A GB 1366101 A GB1366101 A GB 1366101A
Authority
GB
United Kingdom
Prior art keywords
tubes
crystals
silicon
whisker crystals
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4848571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanebo Ltd
Original Assignee
Kanebo Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanebo Ltd filed Critical Kanebo Ltd
Publication of GB1366101A publication Critical patent/GB1366101A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1366101 Gas/solid contact apparatus for preparing whisker crystals KANEBO Ltd 19 Oct 1971 [29 Oct 1970] 48485/71 Heading B1F [Also in Divisions Cl and C7] In the preparation of whisker crystals, tubes 2 are selectively introduced via chambers 8, 9 and 10, Figs. 1 and 2, into reacter tube 1 by raising and lowering partitions 11 and 12, where they are periodically pushed along by piston 17 through the centre of furnace 22 where whisker crystals are formed, and the tubes 2 with the contained crystals are selectively discarged via chambers 32, 33 and 34, Figs. 1 and 4, by raising and lowering partitions 35 and 36. Air is purged from the tubes 2 with nitrogen in chamber 9, reactant gas is introduced at 4, and any air in chamber 33 is purged with nitrogen before introducing a tube from chamber 32. Examples describe the preparation of whisker crystals of silicon carbide using fire brick tubes, hydrogen chloride and propane; of copper from copper monoxide and monochloride applied inside the tube and carbon monoxide and carbon dioxide; of silicon nitride from silica and silicon applied inside mullite tubes and hydrogen and ammonia; of silicon carbide from calcium silicate tubes, methyl chloride gas and methane gas; and of silicon carbide from tubes made of silicon/ silica mixture, chlorine and isobutylene.
GB4848571A 1970-10-29 1971-10-19 Apparatus and process for continuously manufacturing whisker crystals Expired GB1366101A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45095730A JPS5025907B1 (en) 1970-10-29 1970-10-29

Publications (1)

Publication Number Publication Date
GB1366101A true GB1366101A (en) 1974-09-11

Family

ID=14145578

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4848571A Expired GB1366101A (en) 1970-10-29 1971-10-19 Apparatus and process for continuously manufacturing whisker crystals

Country Status (3)

Country Link
JP (1) JPS5025907B1 (en)
DE (1) DE2154045A1 (en)
GB (1) GB1366101A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162504B (en) * 1984-07-17 1988-05-18 Nippon Light Metal Co Process for continuous reaction furnace for production of b-type silicon carbide whiskers
US4873070A (en) * 1986-12-17 1989-10-10 Kabushiki Kaisha Kobe Seiko Sho Process for producing silicon carbide whiskers

Also Published As

Publication number Publication date
JPS5025907B1 (en) 1975-08-27
DE2154045A1 (en) 1972-05-04

Similar Documents

Publication Publication Date Title
GB1470614A (en) Process for deposition of polycrystalline silicon
GB1351234A (en) Process for forming a soft nitride layer in a metal surface
GB1513890A (en) Process for the production of finely divided oxides of metals and/or silicon
GB1467322A (en) Production of carbon disulphide
GB1347394A (en) Process for manufacturing crystalline silicon carbide whiskers
US1965770A (en) Production of acetylene
ES440534A1 (en) Blowing agent mixture
GB1366101A (en) Apparatus and process for continuously manufacturing whisker crystals
DK579986A (en) APPARATUS FOR USE IN A METHOD FOR PRODUCING PRODUCT GAS WITH HYDROGEN AND CARBON Dioxide CONTENTS
ES8104974A1 (en) Method for heat treatment of clay and refractory ware.
JPS6348805B2 (en)
GB1262436A (en) Apparatus for mixing two gas streams
GB1270767A (en) Method and apparatus for thermally decomposing hydrocarbons
US3063803A (en) Turbulent flow flame synthesis of hydrogen cyanide
GB1342319A (en) Method for sulphonatizing and/or sulphatizing organic compounds with sulphur trioxide and apparatus therefor
JPS57111300A (en) Preparation of ceramic whisker
SU508475A1 (en) The method of obtaining fibrous silicon carbide
GB1181729A (en) A Process for the Production of Azodicarbonamide
ES409527A1 (en) Apparatus for the production of gas
SU1224281A1 (en) Method of seething glass compound and device for effecting same
GB507516A (en) Improvements in or relating to processes for the manufacture of carbon black from carbon-containing gases
US1129508A (en) Process of producing boron carbonitrid.
US3235340A (en) Rotary kiln for the manufacture of white calcium cyanamide
JPH01167215A (en) Method and apparatus for manufacturing highly dispersed aluminium oxide particles
SU139657A1 (en) The method of producing silicon monoxide

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee