JPS5025907B1 - - Google Patents

Info

Publication number
JPS5025907B1
JPS5025907B1 JP45095730A JP9573070A JPS5025907B1 JP S5025907 B1 JPS5025907 B1 JP S5025907B1 JP 45095730 A JP45095730 A JP 45095730A JP 9573070 A JP9573070 A JP 9573070A JP S5025907 B1 JPS5025907 B1 JP S5025907B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45095730A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP45095730A priority Critical patent/JPS5025907B1/ja
Priority to GB4848571A priority patent/GB1366101A/en
Priority to DE19712154045 priority patent/DE2154045A1/en
Publication of JPS5025907B1 publication Critical patent/JPS5025907B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
JP45095730A 1970-10-29 1970-10-29 Pending JPS5025907B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP45095730A JPS5025907B1 (en) 1970-10-29 1970-10-29
GB4848571A GB1366101A (en) 1970-10-29 1971-10-19 Apparatus and process for continuously manufacturing whisker crystals
DE19712154045 DE2154045A1 (en) 1970-10-29 1971-10-29 Apparatus and method for the continuous production of whisker crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45095730A JPS5025907B1 (en) 1970-10-29 1970-10-29

Publications (1)

Publication Number Publication Date
JPS5025907B1 true JPS5025907B1 (en) 1975-08-27

Family

ID=14145578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45095730A Pending JPS5025907B1 (en) 1970-10-29 1970-10-29

Country Status (3)

Country Link
JP (1) JPS5025907B1 (en)
DE (1) DE2154045A1 (en)
GB (1) GB1366101A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162504B (en) * 1984-07-17 1988-05-18 Nippon Light Metal Co Process for continuous reaction furnace for production of b-type silicon carbide whiskers
US4873070A (en) * 1986-12-17 1989-10-10 Kabushiki Kaisha Kobe Seiko Sho Process for producing silicon carbide whiskers

Also Published As

Publication number Publication date
DE2154045A1 (en) 1972-05-04
GB1366101A (en) 1974-09-11

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