AT505168B1 - Thermoelektrisches element - Google Patents
Thermoelektrisches element Download PDFInfo
- Publication number
- AT505168B1 AT505168B1 AT0100907A AT10092007A AT505168B1 AT 505168 B1 AT505168 B1 AT 505168B1 AT 0100907 A AT0100907 A AT 0100907A AT 10092007 A AT10092007 A AT 10092007A AT 505168 B1 AT505168 B1 AT 505168B1
- Authority
- AT
- Austria
- Prior art keywords
- junction
- thermoelectric element
- thermoelectric
- thermocouple
- element according
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 51
- 239000004020 conductor Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 229910002899 Bi2Te3 Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0100907A AT505168B1 (de) | 2007-06-29 | 2007-06-29 | Thermoelektrisches element |
ES08011099T ES2531161T3 (es) | 2007-06-29 | 2008-06-19 | Elemento termoeléctrico |
EP08011099.2A EP2009709B1 (fr) | 2007-06-29 | 2008-06-19 | Elément thermoélectrique |
KR1020080061537A KR101175386B1 (ko) | 2007-06-29 | 2008-06-27 | 열전소자 |
CN2008101289899A CN101335324B (zh) | 2007-06-29 | 2008-06-27 | 热电元件、热电发生器和热电冷却器 |
RU2008126318/28A RU2419919C2 (ru) | 2007-06-29 | 2008-06-27 | Термоэлектрический элемент |
US12/216,031 US8373057B2 (en) | 2007-06-29 | 2008-06-27 | Thermoelectric element |
JP2008170129A JP4881919B2 (ja) | 2007-06-29 | 2008-06-30 | 熱電素子を有する熱電発電機 |
US13/654,592 US8766083B2 (en) | 2007-06-29 | 2012-10-18 | Thermoelectric element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0100907A AT505168B1 (de) | 2007-06-29 | 2007-06-29 | Thermoelektrisches element |
Publications (2)
Publication Number | Publication Date |
---|---|
AT505168A4 AT505168A4 (de) | 2008-11-15 |
AT505168B1 true AT505168B1 (de) | 2008-11-15 |
Family
ID=39790321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT0100907A AT505168B1 (de) | 2007-06-29 | 2007-06-29 | Thermoelektrisches element |
Country Status (8)
Country | Link |
---|---|
US (2) | US8373057B2 (fr) |
EP (1) | EP2009709B1 (fr) |
JP (1) | JP4881919B2 (fr) |
KR (1) | KR101175386B1 (fr) |
CN (1) | CN101335324B (fr) |
AT (1) | AT505168B1 (fr) |
ES (1) | ES2531161T3 (fr) |
RU (1) | RU2419919C2 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT508277B1 (de) * | 2009-06-09 | 2011-09-15 | Avl List Gmbh | Thermoelektrisches modul mit paarweise angeordneten p- und n- dotierten schenkeln |
FR2963165A1 (fr) * | 2010-07-22 | 2012-01-27 | St Microelectronics Crolles 2 | Procede de generation d'energie electrique dans un dispositif semi-conducteur, et dispositif correspondant |
CN102130076B (zh) * | 2010-12-25 | 2012-05-30 | 紫光股份有限公司 | 一种热电式计算机芯片散热器 |
RU2444814C1 (ru) * | 2011-03-29 | 2012-03-10 | Юрий Феликсович Верниковский | Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе |
DE102011001653A1 (de) * | 2011-03-30 | 2012-10-04 | O-Flexx Technologies Gmbh | Thermoelektrische Anordnung |
CN102306701B (zh) * | 2011-09-22 | 2013-05-08 | 华南理工大学 | 一种长程集中冷却动力热电偶转换元件 |
US8796535B2 (en) * | 2011-09-30 | 2014-08-05 | Sunpower Corporation | Thermal tracking for solar systems |
KR20130072694A (ko) * | 2011-12-22 | 2013-07-02 | 한국전자통신연구원 | 열전소자 및 그 제조 방법 |
US9081030B2 (en) * | 2013-06-10 | 2015-07-14 | Korea Advanced Institute Of Science And Technology | Computer-aided simulation method for atomic-resolution scanning seebeck microscope (SSM) images |
CN104602484B (zh) * | 2013-10-31 | 2017-04-26 | 展讯通信(上海)有限公司 | 便携式设备及其散热装置 |
CN103701186B (zh) * | 2013-12-19 | 2015-08-12 | 北京京东方光电科技有限公司 | 移动通信终端 |
RU2584143C2 (ru) * | 2014-04-15 | 2016-05-20 | Акционерное общество "Научно-производственный центр "Полюс" (АО "НПЦ "Полюс") | Способ отвода тепла от мощных эри, электронных узлов, блоков и модулей и устройство для его осуществления |
ITUA20164656A1 (it) * | 2016-06-06 | 2017-12-06 | Maria Longo | Trasduttore termoelettrico di composizione mista. |
US9773717B1 (en) | 2016-08-22 | 2017-09-26 | Globalfoundries Inc. | Integrated circuits with peltier cooling provided by back-end wiring |
IL248115A0 (en) * | 2016-09-28 | 2017-01-31 | Yeda Res & Dev | Thermoelectric device |
JP7503311B2 (ja) * | 2018-12-19 | 2024-06-20 | 国立研究開発法人産業技術総合研究所 | 太陽電池および熱電変換素子を有する複合発電装置 |
CN113838944B (zh) * | 2021-08-27 | 2024-06-21 | 中国华能集团清洁能源技术研究院有限公司 | 集成式热光伏电池 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB953339A (en) * | 1959-05-26 | 1964-03-25 | Ceskoslovenska Akademie Ved | Semi-conductor component with a p-n junction and cooled by a peltier cell |
EP0339715A1 (fr) * | 1988-04-27 | 1989-11-02 | Theodorus Bijvoets | Dispositif thermo-électrique |
DE10136667A1 (de) * | 2001-07-27 | 2003-02-13 | Oliver Eibl | Peltierschenkel mit integrierter Diode |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3076861A (en) * | 1959-06-30 | 1963-02-05 | Space Technology Lab Inc | Electromagnetic radiation converter |
JPS5148037B2 (fr) * | 1974-02-26 | 1976-12-18 | ||
JPS50134391A (fr) * | 1974-04-09 | 1975-10-24 | ||
JPS57115877A (en) * | 1981-01-09 | 1982-07-19 | Mitsubishi Electric Corp | Combined element of semiconductor photocell and thermal generator |
JPS58213479A (ja) * | 1982-06-04 | 1983-12-12 | Futaba Corp | エネルギ−変換素子 |
JPS61284976A (ja) * | 1985-06-11 | 1986-12-15 | Tohoku Metal Ind Ltd | 熱電気変換素子 |
DE3835279A1 (de) * | 1988-10-15 | 1990-04-19 | Willi Schickedanz | Energiequelle mit einem photovoltaischen element |
JPH04280482A (ja) * | 1991-03-08 | 1992-10-06 | Oki Electric Ind Co Ltd | 太陽光を利用した冷却素子 |
DE69218102T2 (de) * | 1991-10-22 | 1997-10-09 | Canon Kk | Photovoltaisches Bauelement |
US6084175A (en) * | 1993-05-20 | 2000-07-04 | Amoco/Enron Solar | Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts |
US5716480A (en) * | 1995-07-13 | 1998-02-10 | Canon Kabushiki Kaisha | Photovoltaic device and method of manufacturing the same |
US5929440A (en) * | 1996-10-25 | 1999-07-27 | Hypres, Inc. | Electromagnetic radiation detector |
DE19704944A1 (de) * | 1997-02-10 | 1998-08-20 | Hans K Seibold | Effektivitätsverstärker für thermoelektrische Energiewandler |
JPH11135846A (ja) * | 1997-10-31 | 1999-05-21 | Fujitsu Ltd | 半導体を用いた熱電装置 |
US6256092B1 (en) * | 1997-11-28 | 2001-07-03 | Hitachi, Ltd. | Defect inspection apparatus for silicon wafer |
JP4208281B2 (ja) * | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
DE19927604A1 (de) * | 1999-06-17 | 2000-12-21 | Bayer Ag | Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
AT410492B (de) | 2000-05-02 | 2003-05-26 | Span Gerhard Dipl Ing Dr | Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht |
JP2003069088A (ja) * | 2001-08-30 | 2003-03-07 | Fujitsu Ltd | 半導体装置及びその駆動方法 |
US7400050B2 (en) * | 2001-12-12 | 2008-07-15 | Hi-Z Technology, Inc. | Quantum well thermoelectric power source |
US20040155251A1 (en) * | 2003-02-07 | 2004-08-12 | Vladimir Abramov | Peltier cooler integrated with electronic device(s) |
US20040177876A1 (en) * | 2003-03-10 | 2004-09-16 | Enhanced Energy Systems, Inc. | Spatially optimized thermoelectric module |
JP4118187B2 (ja) * | 2003-05-09 | 2008-07-16 | 信越半導体株式会社 | 太陽電池の製造方法 |
JP2005228915A (ja) | 2004-02-13 | 2005-08-25 | Toshiaki Eto | セパレート型ペルチェシステム |
JP2005268284A (ja) | 2004-03-16 | 2005-09-29 | Toshiba Corp | 熱電変換モジュール、熱電変換装置 |
US20060090787A1 (en) * | 2004-10-28 | 2006-05-04 | Onvural O R | Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles |
JP2007165463A (ja) | 2005-12-12 | 2007-06-28 | Osamu Yamashita | 熱電変換素子並びに発電用モジュール |
JP4667406B2 (ja) * | 2006-03-30 | 2011-04-13 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
US8334450B2 (en) * | 2006-09-04 | 2012-12-18 | Micallef Joseph A | Seebeck solar cell |
-
2007
- 2007-06-29 AT AT0100907A patent/AT505168B1/de not_active IP Right Cessation
-
2008
- 2008-06-19 ES ES08011099T patent/ES2531161T3/es active Active
- 2008-06-19 EP EP08011099.2A patent/EP2009709B1/fr not_active Not-in-force
- 2008-06-27 KR KR1020080061537A patent/KR101175386B1/ko not_active IP Right Cessation
- 2008-06-27 RU RU2008126318/28A patent/RU2419919C2/ru not_active IP Right Cessation
- 2008-06-27 US US12/216,031 patent/US8373057B2/en active Active
- 2008-06-27 CN CN2008101289899A patent/CN101335324B/zh not_active Expired - Fee Related
- 2008-06-30 JP JP2008170129A patent/JP4881919B2/ja not_active Expired - Fee Related
-
2012
- 2012-10-18 US US13/654,592 patent/US8766083B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB953339A (en) * | 1959-05-26 | 1964-03-25 | Ceskoslovenska Akademie Ved | Semi-conductor component with a p-n junction and cooled by a peltier cell |
EP0339715A1 (fr) * | 1988-04-27 | 1989-11-02 | Theodorus Bijvoets | Dispositif thermo-électrique |
DE10136667A1 (de) * | 2001-07-27 | 2003-02-13 | Oliver Eibl | Peltierschenkel mit integrierter Diode |
Also Published As
Publication number | Publication date |
---|---|
US8373057B2 (en) | 2013-02-12 |
EP2009709A2 (fr) | 2008-12-31 |
US8766083B2 (en) | 2014-07-01 |
RU2419919C2 (ru) | 2011-05-27 |
CN101335324A (zh) | 2008-12-31 |
JP2009016831A (ja) | 2009-01-22 |
CN101335324B (zh) | 2012-04-18 |
ES2531161T3 (es) | 2015-03-11 |
KR101175386B1 (ko) | 2012-08-20 |
EP2009709B1 (fr) | 2014-11-26 |
US20090014047A1 (en) | 2009-01-15 |
AT505168A4 (de) | 2008-11-15 |
JP4881919B2 (ja) | 2012-02-22 |
US20130042900A1 (en) | 2013-02-21 |
EP2009709A3 (fr) | 2011-05-18 |
KR20090003124A (ko) | 2009-01-09 |
RU2008126318A (ru) | 2010-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM01 | Lapse because of not paying annual fees |
Effective date: 20170629 |