AT338018B - Verfahren zum betrieb eines funf-transistoren-speicherelementes - Google Patents
Verfahren zum betrieb eines funf-transistoren-speicherelementesInfo
- Publication number
- AT338018B AT338018B AT222774A AT222774A AT338018B AT 338018 B AT338018 B AT 338018B AT 222774 A AT222774 A AT 222774A AT 222774 A AT222774 A AT 222774A AT 338018 B AT338018 B AT 338018B
- Authority
- AT
- Austria
- Prior art keywords
- operating
- storage element
- transistor storage
- transistor
- storage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732317497 DE2317497C2 (de) | 1973-04-06 | 1973-04-06 | Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA222774A ATA222774A (de) | 1976-11-15 |
| AT338018B true AT338018B (de) | 1977-07-25 |
Family
ID=5877304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT222774A AT338018B (de) | 1973-04-06 | 1974-03-18 | Verfahren zum betrieb eines funf-transistoren-speicherelementes |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5760714B2 (sv) |
| AT (1) | AT338018B (sv) |
| BE (1) | BE813374A (sv) |
| CA (1) | CA1045716A (sv) |
| CH (1) | CH589344A5 (sv) |
| DE (1) | DE2317497C2 (sv) |
| FR (1) | FR2224836B1 (sv) |
| GB (1) | GB1463621A (sv) |
| IT (1) | IT1004116B (sv) |
| LU (1) | LU69791A1 (sv) |
| NL (1) | NL7404635A (sv) |
| SE (1) | SE390354B (sv) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51127628A (en) * | 1975-04-28 | 1976-11-06 | Toshiba Corp | Semiconductor memory |
| JPS5345939A (en) * | 1976-10-07 | 1978-04-25 | Sharp Corp | Ram circuit |
| JPS53117340A (en) * | 1977-03-24 | 1978-10-13 | Toshiba Corp | Semiconductor memory |
| JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
| US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
| JPS57113492A (en) * | 1981-01-07 | 1982-07-14 | Nec Corp | Memory circuit |
| JPS57173196U (sv) * | 1982-03-25 | 1982-11-01 | ||
| JPS60242581A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
| JPS60242582A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
| JPH0333844U (sv) * | 1989-08-09 | 1991-04-03 | ||
| FR2670061B1 (fr) * | 1990-11-30 | 1996-09-20 | Bull Sa | Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue. |
| FR2974667B1 (fr) | 2011-04-26 | 2020-10-02 | S O I Tec Silicon On Insulator Tech | Amplificateur de detection differentiel sans transistor de commutation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3644907A (en) * | 1969-12-31 | 1972-02-22 | Westinghouse Electric Corp | Complementary mosfet memory cell |
| US3600609A (en) * | 1970-02-03 | 1971-08-17 | Shell Oil Co | Igfet read amplifier for double-rail memory systems |
-
1973
- 1973-04-06 DE DE19732317497 patent/DE2317497C2/de not_active Expired
-
1974
- 1974-02-28 GB GB914474A patent/GB1463621A/en not_active Expired
- 1974-03-18 AT AT222774A patent/AT338018B/de not_active IP Right Cessation
- 1974-03-25 CH CH409174A patent/CH589344A5/xx not_active IP Right Cessation
- 1974-03-26 FR FR7410293A patent/FR2224836B1/fr not_active Expired
- 1974-03-27 SE SE7404122A patent/SE390354B/sv unknown
- 1974-04-04 CA CA196,877A patent/CA1045716A/en not_active Expired
- 1974-04-04 NL NL7404635A patent/NL7404635A/xx unknown
- 1974-04-04 IT IT5007074A patent/IT1004116B/it active
- 1974-04-05 BE BE142912A patent/BE813374A/xx unknown
- 1974-04-05 LU LU69791A patent/LU69791A1/xx unknown
- 1974-04-05 JP JP49038065A patent/JPS5760714B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| LU69791A1 (sv) | 1974-11-21 |
| DE2317497B1 (de) | 1974-06-20 |
| ATA222774A (de) | 1976-11-15 |
| BE813374A (fr) | 1974-10-07 |
| IT1004116B (it) | 1976-07-10 |
| GB1463621A (en) | 1977-02-02 |
| JPS5760714B2 (sv) | 1982-12-21 |
| NL7404635A (sv) | 1974-10-08 |
| DE2317497C2 (de) | 1975-02-13 |
| JPS49131545A (sv) | 1974-12-17 |
| FR2224836A1 (sv) | 1974-10-31 |
| CA1045716A (en) | 1979-01-02 |
| CH589344A5 (sv) | 1977-06-30 |
| SE390354B (sv) | 1976-12-13 |
| FR2224836B1 (sv) | 1980-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |