JPS49131545A - - Google Patents
Info
- Publication number
- JPS49131545A JPS49131545A JP49038065A JP3806574A JPS49131545A JP S49131545 A JPS49131545 A JP S49131545A JP 49038065 A JP49038065 A JP 49038065A JP 3806574 A JP3806574 A JP 3806574A JP S49131545 A JPS49131545 A JP S49131545A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732317497 DE2317497C2 (de) | 1973-04-06 | 1973-04-06 | Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49131545A true JPS49131545A (sv) | 1974-12-17 |
| JPS5760714B2 JPS5760714B2 (sv) | 1982-12-21 |
Family
ID=5877304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49038065A Expired JPS5760714B2 (sv) | 1973-04-06 | 1974-04-05 |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5760714B2 (sv) |
| AT (1) | AT338018B (sv) |
| BE (1) | BE813374A (sv) |
| CA (1) | CA1045716A (sv) |
| CH (1) | CH589344A5 (sv) |
| DE (1) | DE2317497C2 (sv) |
| FR (1) | FR2224836B1 (sv) |
| GB (1) | GB1463621A (sv) |
| IT (1) | IT1004116B (sv) |
| LU (1) | LU69791A1 (sv) |
| NL (1) | NL7404635A (sv) |
| SE (1) | SE390354B (sv) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51127628A (en) * | 1975-04-28 | 1976-11-06 | Toshiba Corp | Semiconductor memory |
| JPS5345939A (en) * | 1976-10-07 | 1978-04-25 | Sharp Corp | Ram circuit |
| JPS53117340A (en) * | 1977-03-24 | 1978-10-13 | Toshiba Corp | Semiconductor memory |
| JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
| JPS5525897A (en) * | 1978-08-07 | 1980-02-23 | Rca Corp | Precharging circuit for memory arrangement |
| JPS57113492A (en) * | 1981-01-07 | 1982-07-14 | Nec Corp | Memory circuit |
| JPS57173196U (sv) * | 1982-03-25 | 1982-11-01 | ||
| JPS60242581A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
| JPS60242582A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
| JP2012230755A (ja) * | 2011-04-26 | 2012-11-22 | Soytec | スイッチトランジスタを有しない差動センス増幅器 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0333844U (sv) * | 1989-08-09 | 1991-04-03 | ||
| FR2670061B1 (fr) * | 1990-11-30 | 1996-09-20 | Bull Sa | Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue. |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3600609A (en) * | 1970-02-03 | 1971-08-17 | Shell Oil Co | Igfet read amplifier for double-rail memory systems |
| US3644907A (en) * | 1969-12-31 | 1972-02-22 | Westinghouse Electric Corp | Complementary mosfet memory cell |
-
1973
- 1973-04-06 DE DE19732317497 patent/DE2317497C2/de not_active Expired
-
1974
- 1974-02-28 GB GB914474A patent/GB1463621A/en not_active Expired
- 1974-03-18 AT AT222774A patent/AT338018B/de not_active IP Right Cessation
- 1974-03-25 CH CH409174A patent/CH589344A5/xx not_active IP Right Cessation
- 1974-03-26 FR FR7410293A patent/FR2224836B1/fr not_active Expired
- 1974-03-27 SE SE7404122A patent/SE390354B/sv unknown
- 1974-04-04 NL NL7404635A patent/NL7404635A/xx unknown
- 1974-04-04 CA CA196,877A patent/CA1045716A/en not_active Expired
- 1974-04-04 IT IT5007074A patent/IT1004116B/it active
- 1974-04-05 BE BE142912A patent/BE813374A/xx unknown
- 1974-04-05 JP JP49038065A patent/JPS5760714B2/ja not_active Expired
- 1974-04-05 LU LU69791A patent/LU69791A1/xx unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3644907A (en) * | 1969-12-31 | 1972-02-22 | Westinghouse Electric Corp | Complementary mosfet memory cell |
| US3600609A (en) * | 1970-02-03 | 1971-08-17 | Shell Oil Co | Igfet read amplifier for double-rail memory systems |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713073B2 (sv) * | 1975-04-28 | 1982-03-15 | ||
| JPS51127628A (en) * | 1975-04-28 | 1976-11-06 | Toshiba Corp | Semiconductor memory |
| JPS5345939A (en) * | 1976-10-07 | 1978-04-25 | Sharp Corp | Ram circuit |
| JPS53117340A (en) * | 1977-03-24 | 1978-10-13 | Toshiba Corp | Semiconductor memory |
| JPS5723956B2 (sv) * | 1977-03-24 | 1982-05-21 | ||
| JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
| JPS5525897A (en) * | 1978-08-07 | 1980-02-23 | Rca Corp | Precharging circuit for memory arrangement |
| JPS5913115B2 (ja) * | 1978-08-07 | 1984-03-27 | ア−ルシ−エ− コ−ポレ−ション | メモリ配列用事前充電回路 |
| JPS57113492A (en) * | 1981-01-07 | 1982-07-14 | Nec Corp | Memory circuit |
| JPS627640B2 (sv) * | 1981-01-07 | 1987-02-18 | Nippon Electric Co | |
| JPS57173196U (sv) * | 1982-03-25 | 1982-11-01 | ||
| JPS60242581A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
| JPS60242582A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
| JPH0510760B2 (sv) * | 1984-05-16 | 1993-02-10 | Tokyo Shibaura Electric Co | |
| JP2012230755A (ja) * | 2011-04-26 | 2012-11-22 | Soytec | スイッチトランジスタを有しない差動センス増幅器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1045716A (en) | 1979-01-02 |
| AT338018B (de) | 1977-07-25 |
| SE390354B (sv) | 1976-12-13 |
| DE2317497B1 (de) | 1974-06-20 |
| ATA222774A (de) | 1976-11-15 |
| DE2317497C2 (de) | 1975-02-13 |
| GB1463621A (en) | 1977-02-02 |
| NL7404635A (sv) | 1974-10-08 |
| FR2224836A1 (sv) | 1974-10-31 |
| FR2224836B1 (sv) | 1980-08-14 |
| CH589344A5 (sv) | 1977-06-30 |
| BE813374A (fr) | 1974-10-07 |
| JPS5760714B2 (sv) | 1982-12-21 |
| IT1004116B (it) | 1976-07-10 |
| LU69791A1 (sv) | 1974-11-21 |