CA1045716A - Method for operating transistor storage flip-flop and evaluator circuit therefor - Google Patents
Method for operating transistor storage flip-flop and evaluator circuit thereforInfo
- Publication number
- CA1045716A CA1045716A CA196,877A CA196877A CA1045716A CA 1045716 A CA1045716 A CA 1045716A CA 196877 A CA196877 A CA 196877A CA 1045716 A CA1045716 A CA 1045716A
- Authority
- CA
- Canada
- Prior art keywords
- flip
- transistor
- circuit
- digit line
- flop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000008859 change Effects 0.000 claims description 9
- 230000000875 corresponding effect Effects 0.000 description 16
- 230000008901 benefit Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732317497 DE2317497C2 (de) | 1973-04-06 | 1973-04-06 | Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1045716A true CA1045716A (en) | 1979-01-02 |
Family
ID=5877304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA196,877A Expired CA1045716A (en) | 1973-04-06 | 1974-04-04 | Method for operating transistor storage flip-flop and evaluator circuit therefor |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5760714B2 (sv) |
AT (1) | AT338018B (sv) |
BE (1) | BE813374A (sv) |
CA (1) | CA1045716A (sv) |
CH (1) | CH589344A5 (sv) |
DE (1) | DE2317497C2 (sv) |
FR (1) | FR2224836B1 (sv) |
GB (1) | GB1463621A (sv) |
IT (1) | IT1004116B (sv) |
LU (1) | LU69791A1 (sv) |
NL (1) | NL7404635A (sv) |
SE (1) | SE390354B (sv) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9135964B2 (en) | 2011-04-26 | 2015-09-15 | Soitec | Differential sense amplifier without switch transistors |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51127628A (en) * | 1975-04-28 | 1976-11-06 | Toshiba Corp | Semiconductor memory |
JPS5345939A (en) * | 1976-10-07 | 1978-04-25 | Sharp Corp | Ram circuit |
JPS53117340A (en) * | 1977-03-24 | 1978-10-13 | Toshiba Corp | Semiconductor memory |
JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
JPS57113492A (en) * | 1981-01-07 | 1982-07-14 | Nec Corp | Memory circuit |
JPS57173196U (sv) * | 1982-03-25 | 1982-11-01 | ||
JPS60242581A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
JPS60242582A (ja) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | 半導体記憶装置のセンス増幅器 |
JPH0333844U (sv) * | 1989-08-09 | 1991-04-03 | ||
FR2670061B1 (fr) * | 1990-11-30 | 1996-09-20 | Bull Sa | Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue. |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3644907A (en) * | 1969-12-31 | 1972-02-22 | Westinghouse Electric Corp | Complementary mosfet memory cell |
US3600609A (en) * | 1970-02-03 | 1971-08-17 | Shell Oil Co | Igfet read amplifier for double-rail memory systems |
-
1973
- 1973-04-06 DE DE19732317497 patent/DE2317497C2/de not_active Expired
-
1974
- 1974-02-28 GB GB914474A patent/GB1463621A/en not_active Expired
- 1974-03-18 AT AT222774A patent/AT338018B/de not_active IP Right Cessation
- 1974-03-25 CH CH409174A patent/CH589344A5/xx not_active IP Right Cessation
- 1974-03-26 FR FR7410293A patent/FR2224836B1/fr not_active Expired
- 1974-03-27 SE SE7404122A patent/SE390354B/sv unknown
- 1974-04-04 CA CA196,877A patent/CA1045716A/en not_active Expired
- 1974-04-04 NL NL7404635A patent/NL7404635A/xx unknown
- 1974-04-04 IT IT5007074A patent/IT1004116B/it active
- 1974-04-05 BE BE142912A patent/BE813374A/xx unknown
- 1974-04-05 LU LU69791A patent/LU69791A1/xx unknown
- 1974-04-05 JP JP49038065A patent/JPS5760714B2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9135964B2 (en) | 2011-04-26 | 2015-09-15 | Soitec | Differential sense amplifier without switch transistors |
Also Published As
Publication number | Publication date |
---|---|
LU69791A1 (sv) | 1974-11-21 |
DE2317497B1 (de) | 1974-06-20 |
ATA222774A (de) | 1976-11-15 |
BE813374A (fr) | 1974-10-07 |
IT1004116B (it) | 1976-07-10 |
GB1463621A (en) | 1977-02-02 |
JPS5760714B2 (sv) | 1982-12-21 |
NL7404635A (sv) | 1974-10-08 |
DE2317497C2 (de) | 1975-02-13 |
JPS49131545A (sv) | 1974-12-17 |
FR2224836A1 (sv) | 1974-10-31 |
AT338018B (de) | 1977-07-25 |
CH589344A5 (sv) | 1977-06-30 |
SE390354B (sv) | 1976-12-13 |
FR2224836B1 (sv) | 1980-08-14 |
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