CA1045716A - Method for operating transistor storage flip-flop and evaluator circuit therefor - Google Patents

Method for operating transistor storage flip-flop and evaluator circuit therefor

Info

Publication number
CA1045716A
CA1045716A CA196,877A CA196877A CA1045716A CA 1045716 A CA1045716 A CA 1045716A CA 196877 A CA196877 A CA 196877A CA 1045716 A CA1045716 A CA 1045716A
Authority
CA
Canada
Prior art keywords
flip
transistor
circuit
digit line
flop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA196,877A
Other languages
English (en)
French (fr)
Other versions
CA196877S (en
Inventor
Karl Goser
Michael Pomper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1045716A publication Critical patent/CA1045716A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
CA196,877A 1973-04-06 1974-04-04 Method for operating transistor storage flip-flop and evaluator circuit therefor Expired CA1045716A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732317497 DE2317497C2 (de) 1973-04-06 1973-04-06 Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes

Publications (1)

Publication Number Publication Date
CA1045716A true CA1045716A (en) 1979-01-02

Family

ID=5877304

Family Applications (1)

Application Number Title Priority Date Filing Date
CA196,877A Expired CA1045716A (en) 1973-04-06 1974-04-04 Method for operating transistor storage flip-flop and evaluator circuit therefor

Country Status (12)

Country Link
JP (1) JPS5760714B2 (sv)
AT (1) AT338018B (sv)
BE (1) BE813374A (sv)
CA (1) CA1045716A (sv)
CH (1) CH589344A5 (sv)
DE (1) DE2317497C2 (sv)
FR (1) FR2224836B1 (sv)
GB (1) GB1463621A (sv)
IT (1) IT1004116B (sv)
LU (1) LU69791A1 (sv)
NL (1) NL7404635A (sv)
SE (1) SE390354B (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9135964B2 (en) 2011-04-26 2015-09-15 Soitec Differential sense amplifier without switch transistors

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS53117340A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS57113492A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit
JPS57173196U (sv) * 1982-03-25 1982-11-01
JPS60242581A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPS60242582A (ja) * 1984-05-16 1985-12-02 Toshiba Corp 半導体記憶装置のセンス増幅器
JPH0333844U (sv) * 1989-08-09 1991-04-03
FR2670061B1 (fr) * 1990-11-30 1996-09-20 Bull Sa Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9135964B2 (en) 2011-04-26 2015-09-15 Soitec Differential sense amplifier without switch transistors

Also Published As

Publication number Publication date
LU69791A1 (sv) 1974-11-21
DE2317497B1 (de) 1974-06-20
ATA222774A (de) 1976-11-15
BE813374A (fr) 1974-10-07
IT1004116B (it) 1976-07-10
GB1463621A (en) 1977-02-02
JPS5760714B2 (sv) 1982-12-21
NL7404635A (sv) 1974-10-08
DE2317497C2 (de) 1975-02-13
JPS49131545A (sv) 1974-12-17
FR2224836A1 (sv) 1974-10-31
AT338018B (de) 1977-07-25
CH589344A5 (sv) 1977-06-30
SE390354B (sv) 1976-12-13
FR2224836B1 (sv) 1980-08-14

Similar Documents

Publication Publication Date Title
CA1045716A (en) Method for operating transistor storage flip-flop and evaluator circuit therefor
US5111072A (en) Sample-and-hold switch with low on resistance and reduced charge injection
US3949383A (en) D. C. Stable semiconductor memory cell
US4156941A (en) High speed semiconductor memory
US4112508A (en) Semiconductor memory
GB1427259A (en) Testin fet circuits
JPS5916350B2 (ja) 2進信号用再生回路
US5258959A (en) Memory cell reading circuit
US4536859A (en) Cross-coupled inverters static random access memory
US4535257A (en) Comparator circuit
US3644907A (en) Complementary mosfet memory cell
US4063224A (en) Circuit for the production of read-out pulses
US4459686A (en) Semiconductor device
GB1370870A (en) Data storage device
US4336465A (en) Reset circuit
US3964031A (en) Memory cell
US4692642A (en) Active pull-up circuit controlled by a single pull-up clock signal
US5166608A (en) Arrangement for high speed testing of field-effect transistors and memory cells employing the same
US4030081A (en) Dynamic transistor-storage element
US4122548A (en) Memory storage array with restore circuit
US6201433B1 (en) Semiconductor memory device having constant voltage circuit
US4069474A (en) MOS Dynamic random access memory having an improved sensing circuit
US3733591A (en) Non-volatile memory element
US4589097A (en) Non-volatile memory circuit having a common write and erase terminal
US3936810A (en) Sense line balancing circuit