JPS57113492A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS57113492A
JPS57113492A JP100181A JP100181A JPS57113492A JP S57113492 A JPS57113492 A JP S57113492A JP 100181 A JP100181 A JP 100181A JP 100181 A JP100181 A JP 100181A JP S57113492 A JPS57113492 A JP S57113492A
Authority
JP
Japan
Prior art keywords
level
signal
phis
point
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP100181A
Other languages
Japanese (ja)
Other versions
JPS627640B2 (en
Inventor
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP100181A priority Critical patent/JPS57113492A/en
Publication of JPS57113492A publication Critical patent/JPS57113492A/en
Publication of JPS627640B2 publication Critical patent/JPS627640B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/36—Isolators

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To execute an operation at a high speed, and also to reduce the power consumption, by storing a charging voltage level in the capacity, making this charging level a reference, to execute a differential amplification. CONSTITUTION:Digit lines Dj, Dj+1 are charged by transistors (TR) Tpj, Tpj+1 when this gate input signal -phis is in an H level, and an input point A of a sense-up part 2 after a Y-selector is also charged through a TR T2. When the signal -phis becomes a low level after charging, subsequently, a comparing input level point B is cut off by a TR T1 of a gate signal -phis', and charge of a floating capacity CF is held. Decoder outputs Xi, Yj are selected, a signal phi becomes a high level, a low threshold level TR conducts, a resistance TR T4 conducts, and if there is a TR in a selected cell, the line Dj is discharged. Accordingly, the point A is connected to the line Dj through a TR Tsj, and becomes an almost same waveform. From a rise time of a signal phis to a fall time of -phis2, the signal is outputted from a sense amplifier 1 for amplifying a level difference between the point A and B, through an output buffer.
JP100181A 1981-01-07 1981-01-07 Memory circuit Granted JPS57113492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP100181A JPS57113492A (en) 1981-01-07 1981-01-07 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP100181A JPS57113492A (en) 1981-01-07 1981-01-07 Memory circuit

Publications (2)

Publication Number Publication Date
JPS57113492A true JPS57113492A (en) 1982-07-14
JPS627640B2 JPS627640B2 (en) 1987-02-18

Family

ID=11489339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP100181A Granted JPS57113492A (en) 1981-01-07 1981-01-07 Memory circuit

Country Status (1)

Country Link
JP (1) JPS57113492A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151392A (en) * 1983-02-16 1984-08-29 Sharp Corp Semiconductor read only memory circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131545A (en) * 1973-04-06 1974-12-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131545A (en) * 1973-04-06 1974-12-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151392A (en) * 1983-02-16 1984-08-29 Sharp Corp Semiconductor read only memory circuit

Also Published As

Publication number Publication date
JPS627640B2 (en) 1987-02-18

Similar Documents

Publication Publication Date Title
GB1525810A (en) Clock generator and delay stage
JPS54139344A (en) Clock-system static memory
ES439584A1 (en) Differential charge transfer sense amplifier
JPS53134337A (en) Sense circuit
JPS5758297A (en) Semiconductor storage device
JPS56129570A (en) Booster circuit
JPS57141097A (en) Storage circuit
JPS56130885A (en) Address buffer circuit
JPS5755592A (en) Memory device
GB1524665A (en) Memeory circuit arrangement utilizing one-transistor-per-bit memory cells
JPS5648715A (en) Delay signal generating circuit
JPS57103195A (en) Semiconductor storage device
EP0910095A3 (en) Low voltage sample and hold circuits
ES470267A1 (en) Capacitor memory with an amplified cell signal
GB1459951A (en) Shift registers
JPS5693178A (en) Semiconductor memory device
JPS5538611A (en) Memory circuit
JPS57113492A (en) Memory circuit
JPS55113188A (en) Mos memory driver circuit
JPS57103426A (en) Pulse generating circuit
JPS56107387A (en) Semiconductor storage device
JPS5641593A (en) Semiconductor memory unit
JPS54107638A (en) Memory data readout circuit in semiconductor memory unit
JPS54100233A (en) Integrated memory
JPS57195387A (en) Data lien precharging system of memory integrated circuit