AT338018B - METHOD OF OPERATING A FIVE TRANSISTOR STORAGE ELEMENT - Google Patents

METHOD OF OPERATING A FIVE TRANSISTOR STORAGE ELEMENT

Info

Publication number
AT338018B
AT338018B AT222774A AT222774A AT338018B AT 338018 B AT338018 B AT 338018B AT 222774 A AT222774 A AT 222774A AT 222774 A AT222774 A AT 222774A AT 338018 B AT338018 B AT 338018B
Authority
AT
Austria
Prior art keywords
operating
storage element
transistor storage
transistor
storage
Prior art date
Application number
AT222774A
Other languages
German (de)
Other versions
ATA222774A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA222774A publication Critical patent/ATA222774A/en
Application granted granted Critical
Publication of AT338018B publication Critical patent/AT338018B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
AT222774A 1973-04-06 1974-03-18 METHOD OF OPERATING A FIVE TRANSISTOR STORAGE ELEMENT AT338018B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732317497 DE2317497C2 (en) 1973-04-06 1973-04-06 Method for operating a five-transistor memory element

Publications (2)

Publication Number Publication Date
ATA222774A ATA222774A (en) 1976-11-15
AT338018B true AT338018B (en) 1977-07-25

Family

ID=5877304

Family Applications (1)

Application Number Title Priority Date Filing Date
AT222774A AT338018B (en) 1973-04-06 1974-03-18 METHOD OF OPERATING A FIVE TRANSISTOR STORAGE ELEMENT

Country Status (12)

Country Link
JP (1) JPS5760714B2 (en)
AT (1) AT338018B (en)
BE (1) BE813374A (en)
CA (1) CA1045716A (en)
CH (1) CH589344A5 (en)
DE (1) DE2317497C2 (en)
FR (1) FR2224836B1 (en)
GB (1) GB1463621A (en)
IT (1) IT1004116B (en)
LU (1) LU69791A1 (en)
NL (1) NL7404635A (en)
SE (1) SE390354B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS53117340A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS57113492A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit
JPS57173196U (en) * 1982-03-25 1982-11-01
JPS60242581A (en) * 1984-05-16 1985-12-02 Toshiba Corp Sense amplifier of semiconductor storage device
JPS60242582A (en) * 1984-05-16 1985-12-02 Toshiba Corp Sense amplifier of semiconductor storage device
JPH0333844U (en) * 1989-08-09 1991-04-03
FR2670061B1 (en) * 1990-11-30 1996-09-20 Bull Sa METHOD AND DEVICE FOR TRANSFERRING DIFFERENTIAL BINARY SIGNALS AND APPLICATION TO ADDERS WITH RETENTION SELECTION.
FR2974667B1 (en) 2011-04-26 2020-10-02 S O I Tec Silicon On Insulator Tech DIFFERENTIAL DETECTION AMPLIFIER WITHOUT SWITCHING TRANSISTOR

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3600609A (en) * 1970-02-03 1971-08-17 Shell Oil Co Igfet read amplifier for double-rail memory systems

Also Published As

Publication number Publication date
FR2224836B1 (en) 1980-08-14
CH589344A5 (en) 1977-06-30
DE2317497C2 (en) 1975-02-13
NL7404635A (en) 1974-10-08
IT1004116B (en) 1976-07-10
BE813374A (en) 1974-10-07
LU69791A1 (en) 1974-11-21
DE2317497B1 (en) 1974-06-20
GB1463621A (en) 1977-02-02
JPS5760714B2 (en) 1982-12-21
FR2224836A1 (en) 1974-10-31
JPS49131545A (en) 1974-12-17
ATA222774A (en) 1976-11-15
SE390354B (en) 1976-12-13
CA1045716A (en) 1979-01-02

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee