SE390354B - PROCEDURE FOR OPERATING A MEMORY ELEMENT WITH FIVE TRANSISTORS - Google Patents
PROCEDURE FOR OPERATING A MEMORY ELEMENT WITH FIVE TRANSISTORSInfo
- Publication number
- SE390354B SE390354B SE7404122A SE7404122A SE390354B SE 390354 B SE390354 B SE 390354B SE 7404122 A SE7404122 A SE 7404122A SE 7404122 A SE7404122 A SE 7404122A SE 390354 B SE390354 B SE 390354B
- Authority
- SE
- Sweden
- Prior art keywords
- transistors
- procedure
- operating
- memory element
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732317497 DE2317497C2 (en) | 1973-04-06 | 1973-04-06 | Method for operating a five-transistor memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
SE390354B true SE390354B (en) | 1976-12-13 |
Family
ID=5877304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7404122A SE390354B (en) | 1973-04-06 | 1974-03-27 | PROCEDURE FOR OPERATING A MEMORY ELEMENT WITH FIVE TRANSISTORS |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5760714B2 (en) |
AT (1) | AT338018B (en) |
BE (1) | BE813374A (en) |
CA (1) | CA1045716A (en) |
CH (1) | CH589344A5 (en) |
DE (1) | DE2317497C2 (en) |
FR (1) | FR2224836B1 (en) |
GB (1) | GB1463621A (en) |
IT (1) | IT1004116B (en) |
LU (1) | LU69791A1 (en) |
NL (1) | NL7404635A (en) |
SE (1) | SE390354B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51127628A (en) * | 1975-04-28 | 1976-11-06 | Toshiba Corp | Semiconductor memory |
JPS5345939A (en) * | 1976-10-07 | 1978-04-25 | Sharp Corp | Ram circuit |
JPS53117340A (en) * | 1977-03-24 | 1978-10-13 | Toshiba Corp | Semiconductor memory |
JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
JPS57113492A (en) * | 1981-01-07 | 1982-07-14 | Nec Corp | Memory circuit |
JPS57173196U (en) * | 1982-03-25 | 1982-11-01 | ||
JPS60242581A (en) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | Sense amplifier of semiconductor storage device |
JPS60242582A (en) * | 1984-05-16 | 1985-12-02 | Toshiba Corp | Sense amplifier of semiconductor storage device |
JPH0333844U (en) * | 1989-08-09 | 1991-04-03 | ||
FR2670061B1 (en) * | 1990-11-30 | 1996-09-20 | Bull Sa | METHOD AND DEVICE FOR TRANSFERRING DIFFERENTIAL BINARY SIGNALS AND APPLICATION TO ADDERS WITH RETENTION SELECTION. |
FR2974667B1 (en) | 2011-04-26 | 2020-10-02 | S O I Tec Silicon On Insulator Tech | DIFFERENTIAL DETECTION AMPLIFIER WITHOUT SWITCHING TRANSISTOR |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3644907A (en) * | 1969-12-31 | 1972-02-22 | Westinghouse Electric Corp | Complementary mosfet memory cell |
US3600609A (en) * | 1970-02-03 | 1971-08-17 | Shell Oil Co | Igfet read amplifier for double-rail memory systems |
-
1973
- 1973-04-06 DE DE19732317497 patent/DE2317497C2/en not_active Expired
-
1974
- 1974-02-28 GB GB914474A patent/GB1463621A/en not_active Expired
- 1974-03-18 AT AT222774A patent/AT338018B/en not_active IP Right Cessation
- 1974-03-25 CH CH409174A patent/CH589344A5/xx not_active IP Right Cessation
- 1974-03-26 FR FR7410293A patent/FR2224836B1/fr not_active Expired
- 1974-03-27 SE SE7404122A patent/SE390354B/en unknown
- 1974-04-04 NL NL7404635A patent/NL7404635A/xx unknown
- 1974-04-04 CA CA196,877A patent/CA1045716A/en not_active Expired
- 1974-04-04 IT IT5007074A patent/IT1004116B/en active
- 1974-04-05 JP JP49038065A patent/JPS5760714B2/ja not_active Expired
- 1974-04-05 LU LU69791A patent/LU69791A1/xx unknown
- 1974-04-05 BE BE142912A patent/BE813374A/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2224836B1 (en) | 1980-08-14 |
CH589344A5 (en) | 1977-06-30 |
AT338018B (en) | 1977-07-25 |
DE2317497C2 (en) | 1975-02-13 |
NL7404635A (en) | 1974-10-08 |
IT1004116B (en) | 1976-07-10 |
BE813374A (en) | 1974-10-07 |
LU69791A1 (en) | 1974-11-21 |
DE2317497B1 (en) | 1974-06-20 |
GB1463621A (en) | 1977-02-02 |
JPS5760714B2 (en) | 1982-12-21 |
FR2224836A1 (en) | 1974-10-31 |
JPS49131545A (en) | 1974-12-17 |
ATA222774A (en) | 1976-11-15 |
CA1045716A (en) | 1979-01-02 |
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