AT320025B - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
AT320025B
AT320025B AT576469A AT576469A AT320025B AT 320025 B AT320025 B AT 320025B AT 576469 A AT576469 A AT 576469A AT 576469 A AT576469 A AT 576469A AT 320025 B AT320025 B AT 320025B
Authority
AT
Austria
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
AT576469A
Other languages
German (de)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT320025B publication Critical patent/AT320025B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/7302Bipolar junction transistors structurally associated with other devices
    • H01L29/7304Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT576469A 1968-06-21 1969-06-18 Halbleitervorrichtung AT320025B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6808722A NL164703C (nl) 1968-06-21 1968-06-21 Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.

Publications (1)

Publication Number Publication Date
AT320025B true AT320025B (de) 1975-01-27

Family

ID=19803953

Family Applications (1)

Application Number Title Priority Date Filing Date
AT576469A AT320025B (de) 1968-06-21 1969-06-18 Halbleitervorrichtung

Country Status (8)

Country Link
JP (1) JPS5513587B1 (nl)
AT (1) AT320025B (nl)
BR (1) BR6909999D0 (nl)
CH (1) CH501998A (nl)
FR (1) FR2011431A1 (nl)
GB (2) GB1278443A (nl)
NL (1) NL164703C (nl)
SE (1) SE342113B (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148620A1 (en) * 1983-12-27 1985-07-17 Kabushiki Kaisha Toshiba Image sensing device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7002117A (nl) * 1970-02-14 1971-08-17
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
NL8403111A (nl) * 1984-10-12 1986-05-01 Philips Nv Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze.
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
JPH0320953U (nl) * 1989-07-11 1991-02-28
JPH07109831B2 (ja) * 1990-01-25 1995-11-22 株式会社東芝 半導体装置
JP4949650B2 (ja) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9331642B2 (en) 2014-06-27 2016-05-03 Freescale Semiconductor, Inc. Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (nl) * 1962-10-04
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
FR1475075A (fr) * 1965-03-08 1967-03-31 Int Standard Electric Corp Dispositif semi-conducteur à haute puissance
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148620A1 (en) * 1983-12-27 1985-07-17 Kabushiki Kaisha Toshiba Image sensing device

Also Published As

Publication number Publication date
NL164703C (nl) 1981-01-15
DE1802899A1 (de) 1970-02-26
BR6909999D0 (pt) 1973-01-02
SE342113B (nl) 1972-01-24
NL164703B (nl) 1980-08-15
DE1802899B2 (de) 1975-04-24
GB1278442A (en) 1972-06-21
JPS5513587B1 (nl) 1980-04-10
NL6808722A (nl) 1969-12-23
CH501998A (de) 1971-01-15
FR2011431A1 (nl) 1970-02-27
GB1278443A (en) 1972-06-21

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee