AT320025B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- AT320025B AT320025B AT576469A AT576469A AT320025B AT 320025 B AT320025 B AT 320025B AT 576469 A AT576469 A AT 576469A AT 576469 A AT576469 A AT 576469A AT 320025 B AT320025 B AT 320025B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
- H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6808722.A NL164703C (en) | 1968-06-21 | 1968-06-21 | SEMICONDUCTOR DEVICE, CONTAINING A CONTACT WITH AT LEAST TWO SECTIONS AND A COMMON SECTION FOR THESE SECTIONS, INCLUDING A SERIES OF THE SERIES ON EACH PART OF THE CONNECTION OF THE COMMUNITY SECTION. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT320025B true AT320025B (en) | 1975-01-27 |
Family
ID=19803953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT576469A AT320025B (en) | 1968-06-21 | 1969-06-18 | Semiconductor device |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5513587B1 (en) |
| AT (1) | AT320025B (en) |
| BR (1) | BR6909999D0 (en) |
| CH (1) | CH501998A (en) |
| FR (1) | FR2011431A1 (en) |
| GB (2) | GB1278442A (en) |
| NL (1) | NL164703C (en) |
| SE (1) | SE342113B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148620A1 (en) * | 1983-12-27 | 1985-07-17 | Kabushiki Kaisha Toshiba | Image sensing device |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7002117A (en) * | 1970-02-14 | 1971-08-17 | ||
| JPS5818964A (en) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | Semiconductor device |
| DE3329241A1 (en) * | 1983-08-12 | 1985-02-21 | Siemens AG, 1000 Berlin und 8000 München | POWER TRANSISTOR |
| NL8403111A (en) * | 1984-10-12 | 1986-05-01 | Philips Nv | METHOD FOR MANUFACTURING A BIPOLAR TRANSISTOR WITH EMITTER SERIES, AND TRANSISTOR MANUFACTURED BY THE METHOD |
| GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
| US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
| FR2615326B1 (en) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | MULTI-TRANSMITTER-TYPE SEMICONDUCTOR DEVICE |
| JPH0320953U (en) * | 1989-07-11 | 1991-02-28 | ||
| JPH07109831B2 (en) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | Semiconductor device |
| JP4949650B2 (en) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| US9331642B2 (en) | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL296170A (en) * | 1962-10-04 | |||
| US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
| FR1475075A (en) * | 1965-03-08 | 1967-03-31 | Int Standard Electric Corp | High power semiconductor device |
| US3506886A (en) * | 1965-03-08 | 1970-04-14 | Itt | High power transistor assembly |
-
1968
- 1968-06-21 NL NL6808722.A patent/NL164703C/en not_active IP Right Cessation
-
1969
- 1969-06-18 CH CH930369A patent/CH501998A/en not_active IP Right Cessation
- 1969-06-18 GB GB30846/69D patent/GB1278442A/en not_active Expired
- 1969-06-18 AT AT576469A patent/AT320025B/en not_active IP Right Cessation
- 1969-06-18 SE SE8709/69A patent/SE342113B/xx unknown
- 1969-06-18 GB GB58687/71A patent/GB1278443A/en not_active Expired
- 1969-06-20 FR FR6920810A patent/FR2011431A1/fr active Pending
- 1969-06-20 BR BR209999/69A patent/BR6909999D0/en unknown
-
1975
- 1975-06-03 JP JP6697775A patent/JPS5513587B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148620A1 (en) * | 1983-12-27 | 1985-07-17 | Kabushiki Kaisha Toshiba | Image sensing device |
Also Published As
| Publication number | Publication date |
|---|---|
| SE342113B (en) | 1972-01-24 |
| GB1278443A (en) | 1972-06-21 |
| JPS5513587B1 (en) | 1980-04-10 |
| NL6808722A (en) | 1969-12-23 |
| NL164703B (en) | 1980-08-15 |
| NL164703C (en) | 1981-01-15 |
| CH501998A (en) | 1971-01-15 |
| DE1802899A1 (en) | 1970-02-26 |
| DE1802899B2 (en) | 1975-04-24 |
| FR2011431A1 (en) | 1970-02-27 |
| GB1278442A (en) | 1972-06-21 |
| BR6909999D0 (en) | 1973-01-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |