AT320025B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- AT320025B AT320025B AT576469A AT576469A AT320025B AT 320025 B AT320025 B AT 320025B AT 576469 A AT576469 A AT 576469A AT 576469 A AT576469 A AT 576469A AT 320025 B AT320025 B AT 320025B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6808722A NL164703C (en) | 1968-06-21 | 1968-06-21 | SEMICONDUCTOR DEVICE, CONTAINING A CONTACT WITH AT LEAST TWO SECTIONS AND A COMMON SECTION FOR THESE SECTIONS, INCLUDING A SERIES OF THE SERIES ON EACH PART OF THE CONNECTION OF THE COMMUNITY SECTION. |
Publications (1)
Publication Number | Publication Date |
---|---|
AT320025B true AT320025B (en) | 1975-01-27 |
Family
ID=19803953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT576469A AT320025B (en) | 1968-06-21 | 1969-06-18 | Semiconductor device |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5513587B1 (en) |
AT (1) | AT320025B (en) |
BR (1) | BR6909999D0 (en) |
CH (1) | CH501998A (en) |
FR (1) | FR2011431A1 (en) |
GB (2) | GB1278443A (en) |
NL (1) | NL164703C (en) |
SE (1) | SE342113B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0148620A1 (en) * | 1983-12-27 | 1985-07-17 | Kabushiki Kaisha Toshiba | Image sensing device |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7002117A (en) * | 1970-02-14 | 1971-08-17 | ||
JPS5818964A (en) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | Semiconductor device |
DE3329241A1 (en) * | 1983-08-12 | 1985-02-21 | Siemens AG, 1000 Berlin und 8000 München | POWER TRANSISTOR |
NL8403111A (en) * | 1984-10-12 | 1986-05-01 | Philips Nv | METHOD FOR MANUFACTURING A BIPOLAR TRANSISTOR WITH EMITTER SERIES, AND TRANSISTOR MANUFACTURED BY THE METHOD |
GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
FR2615326B1 (en) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | MULTI-TRANSMITTER-TYPE SEMICONDUCTOR DEVICE |
JPH0320953U (en) * | 1989-07-11 | 1991-02-28 | ||
JPH07109831B2 (en) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | Semiconductor device |
JP4949650B2 (en) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
US9331642B2 (en) | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL296170A (en) * | 1962-10-04 | |||
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
FR1475075A (en) * | 1965-03-08 | 1967-03-31 | Int Standard Electric Corp | High power semiconductor device |
US3506886A (en) * | 1965-03-08 | 1970-04-14 | Itt | High power transistor assembly |
-
1968
- 1968-06-21 NL NL6808722A patent/NL164703C/en not_active IP Right Cessation
-
1969
- 1969-06-18 SE SE870969A patent/SE342113B/xx unknown
- 1969-06-18 GB GB5868771A patent/GB1278443A/en not_active Expired
- 1969-06-18 AT AT576469A patent/AT320025B/en not_active IP Right Cessation
- 1969-06-18 CH CH930369A patent/CH501998A/en not_active IP Right Cessation
- 1969-06-18 GB GB3084669D patent/GB1278442A/en not_active Expired
- 1969-06-20 BR BR20999969A patent/BR6909999D0/en unknown
- 1969-06-20 FR FR6920810A patent/FR2011431A1/fr active Pending
-
1975
- 1975-06-03 JP JP6697775A patent/JPS5513587B1/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0148620A1 (en) * | 1983-12-27 | 1985-07-17 | Kabushiki Kaisha Toshiba | Image sensing device |
Also Published As
Publication number | Publication date |
---|---|
DE1802899B2 (en) | 1975-04-24 |
JPS5513587B1 (en) | 1980-04-10 |
NL6808722A (en) | 1969-12-23 |
GB1278442A (en) | 1972-06-21 |
FR2011431A1 (en) | 1970-02-27 |
GB1278443A (en) | 1972-06-21 |
BR6909999D0 (en) | 1973-01-02 |
DE1802899A1 (en) | 1970-02-26 |
NL164703C (en) | 1981-01-15 |
NL164703B (en) | 1980-08-15 |
CH501998A (en) | 1971-01-15 |
SE342113B (en) | 1972-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |