NL296170A - - Google Patents
Info
- Publication number
- NL296170A NL296170A NL296170DA NL296170A NL 296170 A NL296170 A NL 296170A NL 296170D A NL296170D A NL 296170DA NL 296170 A NL296170 A NL 296170A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEJ22459A DE1264615B (en) | 1962-10-04 | 1962-10-04 | Emitter connection of a power transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
NL296170A true NL296170A (en) |
Family
ID=7200967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL296170D NL296170A (en) | 1962-10-04 |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1264615B (en) |
FR (1) | FR1358189A (en) |
GB (1) | GB1044469A (en) |
NL (1) | NL296170A (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3504239A (en) * | 1964-01-31 | 1970-03-31 | Rca Corp | Transistor with distributed resistor between emitter lead and emitter region |
US3368123A (en) * | 1965-02-04 | 1968-02-06 | Gen Motors Corp | Semiconductor device having uniform current density on emitter periphery |
US3506886A (en) * | 1965-03-08 | 1970-04-14 | Itt | High power transistor assembly |
DE1514266C3 (en) * | 1965-08-12 | 1984-05-03 | N.V. Philips' Gloeilampenfabrieken, Eindhoven | Semiconductor device and circuit therefor |
JPS5025306B1 (en) * | 1968-04-04 | 1975-08-22 | ||
NL164703C (en) * | 1968-06-21 | 1981-01-15 | Philips Nv | SEMICONDUCTOR DEVICE, CONTAINING A CONTACT WITH AT LEAST TWO SECTIONS AND A COMMON SECTION FOR THESE SECTIONS, INCLUDING A SERIES OF THE SERIES ON EACH PART OF THE CONNECTION OF THE COMMUNITY SECTION. |
NL6813997A (en) * | 1968-09-30 | 1970-04-01 | ||
NL7002117A (en) * | 1970-02-14 | 1971-08-17 | ||
NL165888C (en) * | 1970-10-10 | 1981-05-15 | Philips Nv | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING A COLLECTOR ZONE, A BASE ZONE AND AN EMITTER ZONE WITH THE EMITTER ZONE CONTAINING AT LEAST TWO STAPLED INTERMEDIATE AREAS, WHICH ARE ALREADY USED, SPREADING THE LITERALLY. |
JPS5641186B2 (en) * | 1972-03-03 | 1981-09-26 | ||
DE2251727A1 (en) * | 1972-10-21 | 1974-04-25 | Licentia Gmbh | SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES |
JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
DE3346518C1 (en) * | 1983-12-22 | 1989-01-12 | Texas Instruments Deutschland Gmbh, 8050 Freising | Field effect transistor with insulated gate electrode |
JPS62229975A (en) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | Semiconductor device |
JP3942984B2 (en) * | 2002-08-06 | 2007-07-11 | 株式会社ナノテコ | Bipolar transistor, multi-finger bipolar transistor, epitaxial substrate for manufacturing bipolar transistor, and method for manufacturing bipolar transistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1786107U (en) * | 1956-09-25 | 1959-04-02 | Siemens Ag | POWER TRANSISTOR. |
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
-
0
- NL NL296170D patent/NL296170A/xx unknown
-
1962
- 1962-10-04 DE DEJ22459A patent/DE1264615B/en active Pending
-
1963
- 1963-05-30 FR FR936602A patent/FR1358189A/en not_active Expired
- 1963-10-03 GB GB3902463A patent/GB1044469A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1264615B (en) | 1968-03-28 |
GB1044469A (en) | 1966-09-28 |
FR1358189A (en) | 1964-04-10 |