DE1802899A1 - Semiconductor device - Google Patents

Description

Diploma ERICH E. WALTHER \ '",' Γ ¹

Applicant: NV Ph.LiPo GLOEiUMPENFABRIEKEM 1802899 ^Akt · 'PHH- 3254

Registration from: „„ _ÄW4 . _Ä> . _ÄW j ^ g ^ Q

"Semiconductor device"

The invention relates to a semiconductor device Mi.j nit a semiconductor body of which a practically eber.e "laugh with a An insulating layer is provided over which a contact is made; tree '· .t, the several parts, hereinafter referred to as fingers verier., 'aid eirvm has part common to all fingers, whereby in each of the connecting paths B the fingers and the common part eir. /.eih<M:vider6*änd ^ is taken up while the fingers are exposed through the opening in the insulating layer make contact with the semiconductor body.

In semiconductor devices such "are often ONTACT old fingers used Ftbr integrated circuits zV, wherein two or nrahr groups meet in a ge me in seed point, it may be gevtSnscht, in Jj" d "of the circles n receive a Reihenwideretand, wherein this series contradicting b * B. from symmetry considerations is equal or at least large

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from the same '!: -. -lrBsuenordnuni: iird. The ke i hon wile rut Sn de can z. "Serve to promote ~ ^ u th power distribution IUF cifihrer" parallel oachaltete diodes or transistors.

From British patent IJr. 1.044.4'j9 # is a Vehremittertraneißtor known with an emitter uni in lasiskon takt,> iie form an interdipitalea '.'uster, where iie / in ^ er of the' .mitterkontak ty <* about He ihenwiders t9r.de with a r, for the. ^ ir. ^ er / re-.einsaren "'.eil dea imitter contact connected nind.

} Fei the known devices are available for 's. Drif., Imr der Loiher.-wileratände in the manufacture of some additional Hiotomaski ^ rtaicrs-, tufer. required, u «n. the very precise arrangement of a window for the lateral limitation of the series resistances and including a ritic etching process. As a result of the difficult feasibility of this tufer. a high AuaechuQ3 occurs during manufacture.

The aim of the invention is to provide a semiconductor device of the unions Deached type au create that in a simple manner and with high yield producible iet. The invention is based inter alia on the recognition that it it is not necessary that the series resistors are electrically separated from each other are isolated, but that a closed resistance layer is used can find nid that also when using a closed. Resistance layer avoided the very precise alignment stage mentioned can be.

A semiconductor device of the type described in the opening paragraph is according to the invention characterized) that at least some of the series resistors mentioned a part of the same closed resistance layer forms,

Such a semiconductor device has a contact with

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Series repetition, which simply herate-llbir i «t, whereby iie. ■. :: bri! .. '" ur.cr the resistance does not require any critical additional steps, because the dimensions are in a direction transverse to the DiokenrichViair lor Wl le rv tan iseohicut the value of the VfiderotSrde practically does not influence the pipe. - «mo seed in part of; o:. ibt .taktes Le ..- t ti, the latter distance is not _t from a Ausrichtvor; HS abhin is ^ ig, bonding; iurch lie" aske is determined, the agent e fleichzeiti " · Both iie iJe ^ renzun ^ i * »r

Fin ^ r als auci: die dee tferieinsarer "" hurry received werien, M

It should be noted that from the aforementioned British Patent ^{Schxif +} , No. 1.O44.40? A transistor with a central contact with series resistors is also known, with the same closed resistive layer being used for lower series resistors, but the series resistors are not in the connection paths between the ifingem and the part of the contact common to the finders, but rather the The emitter contact consists of a metal pattern which extends over a resistance layer lying on the insulating layer and in the windows, which is completely covered by the metal pattern. Because only the resistor layer is connected to the underlying emitter zone, this resistor layer forms a series resistance between the emitter zone and the metal pattern of the contact, with the current flowing through the resistor layer in the thickness direction.

This configuration of series resistors according to the aforementioned British patent specification, however, is not suitable for all applications as well as. It can e.g. large area to a Vriderstandseschicht with unpractical

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-4- ^m t · ;. 3--34

table έΓΓΟΒΒβΓ thickness, as well as the smaller emitter zones of the This can be the case when a higher heron resistance is desired.

The. down}. The dimensions and the ab ;; t = md the fin /; er of the Kont'w; tG from each other as well as the resistance value of the Roihon wide rs t would be a, B, from a few tenths of an ohm to a few ohms are typically such that iie orientation of the 'aske! rrer for Be, sun of the individual resistors γ especially cenau done rauBB. the application of Erfinlun ^ · has a considerable simplification for Foli ^r e, and an important imple mentation shape of the semiconductor device t ^ Emfiae of the invention is then also characterized in that the contact is the 1-jitter contact of a transistor.

The resistance layer can be seen as a stratified area extend on the insulating layer. Such a layer can e.g. Titanium, tantalum, aluminum or a nickel-chromium alloy rune consist.

In another important embodiment of the semiconductor test device According to the invention, the resistance is in the resistance area between two adjacent fingers at least as great as the resistance in the resistance layer swieohen each of these fingers and the part of the contact common to these fingers. That way becomes a good power distribution to the various fingers is promoted.

In another important embodiment of the semiconductor device According to the invention, the resistance layer is one on the Surface adjacent to the surface and extending in the semiconductor body

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zone, lie through an im - '.. ι. ·: ΐθΐ' ('ir. £ vom Τ4Τθΐ.ζ «η l« r.' "oil '.e .; Halul -.' ilorköx'pere gotrei.r.t iut.

In some cases, such an obur. Zor.o h-rch a Mffusionobohan llung, in which lie ⁿ ii'fi:.; Ion depth xind learned the .lotiencwükonzentration. 'Against the tiniswert completelyi ■ αι., - Oj ibi · * Werie: .. also i'Or this Idf fv.sionnbehnndlung tiilt, daae d - '. T «oi -r.rci. iie a. who. h.nr der;) rfindiiri {T koine jona \; en ii.srichtvorglnij'e ei! .jn: 'llhrt werder :.

iiei der ^. '.' eniiai ^ iiffia.dierter: .eii.onwider:; t * Lt. : e k8: .r; O! /or.i.i'.e AusrichtvorfHn /; e ai.ch dadi: rch vnrmieier. be that lie ^M i: 'f.: io »; snnhar: ilun ;; for the Wi lerat ^M iii Ie. Ioich2eitif with one or nei.rere :; Jif: 'u3ionen takes place, the fttr the HeratellurjeT oinea iJchalturvsbauo leinen te j, z.-.-, .us to KontaktierBiiden TVuielemer.tea, required for:., Mi der: it> rjt-2llxin .; eitee I ¹ TaIiSiStOrS could z, l ·. the Heihei. repels; t! li. Ie f-iwiolizeiti.- nit the emitter- ur: d / or -ler' -.siodiffuuion receives · i. Herder., Because the series η resisted in the semiconductor body mostly di.rch; ir. Jcaiet \ anf "f-tjer., Which leads to the collector zone of the transistor ^ LSrt, leads to a more detailed isolation of the series opposition to the reference lui. _F ier Hazissdiffucior. For this resistance, on the other hand the ^ ewllr.scate leads to the resistance value of the series resistances to the desirability of using the '.'. mitterdiffusion. In practice, a r'or.bination of these b% .. 1er riffv.aionen, J

at. which the actual resistance is formed by a surface zone, which has been obtained at the same time as the iOmitter zone and which becomes uneven for insulation by a further surface zone that has been obtained on the same side as the base zone, especially geelsne *, to prevent undesired tranaistor action lev "emitter-base transition preferably kuxa-closed.

For unclear reasons, the above-described double

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liffim lif-rter; '.ii lorTtände bibuur rauht \ 1α I-fi-.n.- vi ieiVtin ie in αιτ.'

ir. ;; en a, ^T) , le ;, Kmitterkor. Vtrctr: eii.et. '. "r: u-.3it -; * orfi vorweiset v? or <ioi .. In certain KHllon can ^ i:. lerarti ^ for JrU ₁ di :; oit' .- in" τλιβιγ.- '«". .- · ** L beu-onoi:, υ, 3, wonr.dor Λΐν V: ir.Ί der Finrf-r vone ^ n-mior '/.ι, VIoIr.it t _f um in each of the fingers gin en dt j. pt It Uf for. lierter. -. '. rf- \ wi if. ·: · - · -ü: 1 -.v.fiiehraen sv: V: 8r.nor. » 'i'eil iie Fieihpr.wi-lerstUr.i'p, i ·· zwp: "OfirritGnoLZo .. ¹ - ^ ir.it two ail ilor' Inlbloiieroberfliche errlenieiv j?: -" e ^ er - "- r .; · ::. er th-itoi ,, • Kiruien lie Meihnnwiderstär.rlo nUclich Erolio :. oreiter aLk iio "ir- '-'- ν seil.,

•! ■ ie: - 'rfir.iur .. · reduces this,' eightf-i] »Jr 1« ir e w.'itore '.;: S-

ftlhr \ .r. _t aforn: - "- r; i: ilblei1ervGrrichti.:. t (--'-'--- '^ er rfi; h ;. ¹ .- it ι.-ι!' - Γ'-γ,« , "e.'tßi.nzpicruiot that the i" i ierstandssohiugt lure '., ζνηί.'. or.an · <;> ίΙ: ο ⁺ becomes, from ttenf'n 'iio era te a "be rf Itcher. zone i - *, Ί-- ix I-Ialbl »; iter— body vBlli ^ j dxiroh: '. iö second .lor.e is surrounded, VUhret. L' he second tones - both with the surface sone and with Iem 3n Λίβ-second -one t'renzer.doii "'part of the semiconductor body each forms one :. χ.η-'obei-rar.;;, where preference -"'eiae 1er pr .-' Ie-Der.janj between . the "o ^ -rf lScher.aone ur.d the further. zone is short-circuited»

The two zones of the iiideretandsaohiciit. <5r.nen simultaneouslyi ^ r.it W further. Zoner, eg the zoner, eir.en Transiiitoro, are preserved, but need calibration with this confiz-uration between neighboring. There are no rows to be located at the "overflowing pr * - 'jebergSnge, whereby this confierura - ^. Ion is also to the .'j, - who eicr.et.

In another embodiment, the "" surface zone is in several Teilzor.en divided, with the pn-Ueberfjang between each ör the Sub-zones and the second 2one is short-circuited. Lei of a double

009809/0 880

diffused * i ^:. era ta :; lrsahelt -it eir.He such --- r. : οι,: Ί wratior. becomes the Ή '! leretaii 1 in d «r Resistar. '^ schi ^ ht .zwioohen berirvc :. ^v ' ^r ir + en Pin / rem essentially. 'lurch the between aieaen yin »-em lie, .- ei.'ier. '"Part of the second: Jone starries, because the flmchei · .wi! eratai.d of the two ⁴ er. lone is usually considerably higher than ir-r part zor.er,' nfoli-edesaen has this" .iiilerstiir.d 2wi3ch ·. * · LOr.ichL ^ .rtor. '.'ίη.; οηι slightly t.'iijen V-'ert, ier jnindester.G oconso <tos3: 3 is Vfie the ies' niierütandec svischen each of the fingers and the do ;. Finrerri lonely "'« il ies "ontn.i-.ts.

In the Zti £ Oinr.anhan _£ - with before: iter.er.deπ be ferr.er noted, d% r; s the pn-Ueber ^ Anf between; <> that of the Teilaoi en i ^ .i the second. Jone preferably at the ieir. i ^> ^: a single part of the '-'contact to the higher- i'eite of the sub-zones. : ai £; e is brought. Not only are the participants kSr.r.en through a mutual contact window with the jemeir.sarner. Part of the v on to make contact, but the Etroir. Flow direction in the Teilzor.en is also such that the PN-Ueberganp Ewisch ^ n the subzones and the second. The zone is pretensioned in some distance from the short circuit in the direction of the circuit, which means that the resistance between neighboring finders is particularly high.

Appropriately, it can be provided that the an elongated shape with two long ones lying on top of each other Has edges, along one of these edges several pingers with the Resistance layer are connected, while the kid resistance layer practically along the entire opposite long edge with the Fingers common part of the contact is connected, Sine such elongated resistance chain is, for example, rectangular or ring-shaped.

In this way it is achieved that the series resistances one between each of the fingers and the common part of the contact

009809/0880 _BAD ORIGINAL

have practically the same value, which means that the current is distributed well is promoted on the different fingers »

In the case of the 1 elongated resistance layer described above obviously also has the part that is common to the fingers Contacts often have an elongated shape, with the spacing of the attachment point of the insert to be attached to the common part from the Fingers is usually not the same for every finger. Furthermore is the surface resistance of the electrode layer, which is the common part forms, mostly lower than that of the resistance class, so that the

£ Electrical paths that run from the point of attachment to the fingers, on one

as long as possible in the common part. The differences in length the parts of these that are in common part of the contact Current paths have differences in series resistance for the different ones Fingers, which adversely affects the current distribution can be·

The mentioned difference in series resistance can be attributed to several Ways to be reduced or eliminated, e.g. by using a common part of contact with gradual thickness. They can also Doping concentration and / or the diffusion depth a diffused

™ Resistance layer or the thickness of one lying on top of the insulating layer

Resistance layer can be selected locally differently *

An important embodiment of the semiconductor device according to FIG Invention, in which the common part of the contact with a connection conductor is provided, however, it is marked daduroh that the resistance is oohioht a practically homogeneous layer, the shortest Distance of a finger from the common part of the contact for> a finger, which is close to the point of attachment of the mentioned connection conductor

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BATH ORIGINAL

-5- Piss :. ϊ2 <ά

on the common part is greater than for a finger that calibrated at a great distance from this point of view.

Such a contact in which the series resistance between the attachment point and the fingers for the different fingers easily can be made practically the same, can be done in a very simple way Make way *

Exemplary embodiments of the invention are shown in the drawings and are described in more detail below » Show it!

Figure 1 is a schematic plan view of an exemplary embodiment M

a semiconductor device according to the invention,

FIG. 2 is a schematic diagram taken along the line H-II of the figure Cut through this semiconductor device,

FIG. 3 shows a schematic plan view of one part of another Execution form of the semiconductor device according to the invention,

FIG. 4 shows one along the line IV-IV of FIG guided cut through this semiconductor device,

FIG. 5 echematically a plan view of a further embodiment of the semiconductor device according to the invention,

Figure 6 schematically. a long line VI-VI of Figure 5 S - -

led Sonitt through this device "

The semiconductor device naoh Figures 1 and 2 contains a semiconductor body 1, of which a practically flat surface 2 with a Insulating layer 3 is provided, wherein the insulating layer 3 is a Contact 4, 5 extends, of several parts 5, hereinafter referred to as fingers be beseiohnet, and has a part 4 common to the fingers 5, where in each of the connecting paths »wipe your fingers 5

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seeds part 4 a row i! was recorded, while fingers 5 through openings 3 in the insulating layer 3 with red semiconductor body 1 Contact Bachen »

Qeα: lake of the invention form at least some of the series contradictions * etSende part of the same closed rfiderstaniaechioht 6, 7.

In the present embodiment, the contact 4, 3 is the. Elder contact «Ines Transistors. It should be noted that in the top-row according to FIG. 1, the insulating layer 3 is daoed to be transparent, as a result of which the underlying semiconductor zones are visible eir.i. Per mentioned Ir ar. β in-gate

φ has »wti emitter zones y» which are roughly surrounded by a base zone 10, while

the adjacent part 11 ies semiconductor body 1 belongs to the collector zone, Di · BaaiMone 10 looks through window 12 Contact with the bas ic on takt 13 » which also has several fingers, the Jäaitterkontakt 4, 5 and the base cone 13 aueaaoen form an interdigital pattern ",

The resistance 6, J consists of two zones, the rate of which is a surface zone 6, which will pass completely through the second zone 7 in the semiconductor body 1, this second zone J with both the surface zone 6 and the an the second zone bordering the Wk Part 11 of the semiconductor body 1 is shown as 14 or 13 in the figure.

»Established pn-transition forms» to prevent an undesired The transistor effect is in the present example the pn junction 14 * through the common part 4 kuregesohloeeen, which through the window 16 through both with the surface zone 6 and with the second 3one 7 makes contact »

His present exemplary embodiment teaches the diffused resistance layer 6, 7, in particular the second zone 1 of the resistors, in the semiconductor body to the collector zone 11 ie the transistor

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-11- ■ - - '■■.

• --Η-

, iot obviously a short circuit ies pri- 'obort.-finc.-R 1' ⁴ att ■ les pn-L'ebercang · 14 undesirable. 'Mt kurzf-uochlosser.etn Ji. T liver "-an ,: 1" .steht in operation practically .ie rjnitter-ilollektor ---: iiJiur ~ fiber de "pn I'ebergang 14» wodtirch this _t xi. - eberran, '14 during normal operation of the transistor in the VonrSrterichtunt; preloaded and surface zone 6 not isolated from the collector zone 11.

The Cborf lilch '^ i.zor.e 6 is divided into two parts, the pn- ^v 'ber.; Ln ₍ ; «14 between each of the sub-zones ur.rt the second l'one .ir . 1. Di * ^»r depending iiterteilung in subzones iet ^ eioch not essential; the '''berflächenzone ο kar.r. also' a zusamrnenhaneende zone be.

The transistor of Figures 1 and may J. entirely on the IlalbleitertechniV: usual "are .jefertirt else. The semiconductor body consists, for example, of a semiconductor substrate 17 and an epitaxial layer 11 applied to it, which has a higher specific resistance than the substrate 17. The epitaxial layer 11 and the substrate 17 are of the same conductivity type and together form the collector zone of the transistor. In the epitaxial layer 11, the base region 10 and the second zone 7 are of a eiitaxialen that of the layer 11 ent _L -ojengesetzten conductivity type voreugsweise during the same conventional Difftjsionsbehandlun {j attached. During a further diffusion treatment, the emitter zones 9 and the surface zones 6 can then be produced at the same time.

Furthermore, the contacts 4 »5 and. 13, which for example consist of aluminum or another suitable electrode material, such as gold or nickel, are attached, the 3ase contact 13 through

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-12- - ■ - ■ '■■■. HBI _# . 325ί; V

Openings 12 make contact with base zone 10, fingers 5 through openings 8 with central sub-zones 9 and through defunctunity. 18 make contact with the surface sub-zones 5 of the v / ideratandesohicht 6 ^ 7 and the joint part 4 is connected by an opening 16 to both the surface sub-zones 6 and to the second Son® 7.

The base contact 13 uniä the common part 4 of the EiiitterkbntaictB 4, 5 kBnee to be confused in the usual way with an Anaobluiseleitex, while the substrate 17 has a common collector contact connected no can, while furthermore the transistor in a usual Sheath can be attached to "-" in. '

The described transit gate geaass the Erfittdung has a Umitter contact with series resistors in each of the fingers, where fttr the production of the series resistors does not require any additional production steps are required, while for the double-diffused series resistances a configuration has been used> which gives a good street-over division on the different fingers and also with small distances can be used for both fingers. The distribution of the Surface zone 6 in sub-zones has the advantage that the resistance in the resistance line between adjacent fingers, i. e. the Resistance of the resistance layer between a window 18 and a adjacent window 18, is slightly larger than the resistance between each of the windows 18 and the window 16, which favors the current distribution.

The short circuit of the pn junctions 14 through the window 16, Hindu nua.W »on the side of the ¹ subzones facing the common part 4, has the advantage that, in the operating state, those parts of the pn junctions 14 _f are at some distance from the short circuit , 4 # h,

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voffl Fenettr are 16, sir.il biased in the direction of the fblichen "Mtterstroas in iiperrichtung, whereby the resistance in the tiilerstands-Bchioht 6, 7 between adjacent fingers 5 significantly f-rÖRöer ale is the resistance" wipe Jelem of children and the j common part 4 »

The invention can also be used with integrated switchgear. The example shows in the piers 3 ^Τ ^ Ί 4, Zs are un * tranaietoren, whose Eaitter is connected to a po ^ ain3amen connecting conductor 22, which combination of transistors is included in a circuit, the remaining part for the invention is not important and therefore not set out in the law, rebrigann sir. L in the μ

^{I 1} SiIe corresponding to FIGS. 3 and 4 are denoted by the same Bözugoziffer as in FIGS.

This embodiment includes a substrate 17 and an epitaxial layer of the opposite conduction type, where parts of the epitaxial layer are transformed in the usual way in insulating zones 22 of the same type as the substrate 1 " of the epitaxial layer lie> ollektorionen of the two transistors This - ollektorzonen 11 are lurch window 23 with a üetsllleitbahn 24 ontn in "<t _f iie nit further parts of the circuit is connected further iie KoIIe-:.!. torzonen 11 ™

o be provided with a low-resistance I ¹ SiI 11a to reduce the collector series resistance.

The resistance layer is formed by a single closed surface area 21, which can be produced at the same time as old emitter zones 9. This surface zone 21 is surrounded by an insulating zone and separated from it by a pn junction 25. Such a diffused resistance layer preferably has a sheet resistance

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■ -W- - - «£:» 3254;

from 1 to 10 ohms,

It is timed »aaäs it can be with Küoksioht on the office break fan of the pn-lObergansa ? Λ j-ewubsaeht that the resistance of the layer does not go through its Iaolierzone, ^ he white tones a low specific""In this * Pell, the .'ilerotandsachicht can consist of eg." . I pi * forderlichenfaXlß locally lurch lio -Wbrih ^ ung one or more '' b ^ rfläohonsoncjn from the bleacher, Uiittai ^ styp vie dae irieel "firmioe 'Jobiot aerab ^ aytzt oeir, kiurvn" also can 4ie an Π a-ii the? Igxiren 1 uni 2 described; 'onfit "» "ratioti Λκ" ^Γ * Ί ^ Ι », ί; find» in almost every case the'! Älbleitersofcön leo Trtmsistors imd the iiiderstaj-sdBschiQht a «H. Iia same inselföroi ^ un 'lobiet rat ^ be needed! tons »'

The Hilerst'üvisschicht 21 has a circular shape with two ar. ler c.'öt.'ei.Qberlieijenden long FJin ^ em, "obei ISii ^ s one of the oer Hünier several fingers 5 through window 1S with the" fidarstandBeohiaht 21 are vjrbtarian, while the "Überf tandsachicht 21 prat: table length dee dance ^ eronCoverlying liaiideB through the window "16 with the tjeaeinaanen part of the contact 4t 5 is connected,

The common part 4 of the contact 4 » 5 » connects to that for the end of the transistors jreneineainen / oiachluselleiter 22 , which in the present example is formed by -a »-! with a veitei ^ r. i'xjikt verbi in the circuit. dei. "The fingers 5 • jr.i. The Kideretandsschicht 21 zvtn-. G ^ r & ir.sast & n part 4 extend from the Sr * -parents across the fingers ^ ang or the Ansats & telle- dee part 4 and the -inecalxjflsleiter 22 further.

Resistance is this Utroisvee "" wiper, the Htnittteilzoner. 9 t with the mentioned approach for all toilets? This is practically _f He <1ee connection ladder 22 aö-coneinaaneu "eil 4 lie ^ t, grisiser iat alß - * 'ϋϊ a pincer 5f which is in ^ rösserer!

As a result dieeer differences in the ATjatänden -'enster IB from Fenater 16 iat the .'ideratand 18η _& "ε in the practical homojersn" iderBteuidsschicht 21 lying parts of the 3tromvege FTIR each Pincer? different,

being for one. Ctromwej, deceen in the “eneinsatnen part 4 lio _; ; er.ier part ™

There is a large resistance, which has a low resistance in the part of the outer layer, ttr.d iini, reverses. As a result, the differences in the Qeaamtreihenwi ierstar.d der ^ tromwe _fr ; e, which fill from the point of attachment to the limitter zone, for din different "! -. Fingers are easily eliminated or at least reduced.

By the hand of the Pigrirer. * j and ο a further example is now described. This is not a so-called "emitter transistor", in which the semiconductor body contains a substrate 51 of one conductivity type on which an epitaxial layer 52, z, 3, of the same μ

Line type but with a higher specific resistance is appropriate. The substrate 5I and the epitaxial layer 52 together form the KoI lector zone of the transistor «

In the epitial layer 52, a base region 53 is from the opposite Line type attached, with one in grid 53a from the opposite Line type is provided with lower resistivity, The grid 53a is used as usual to reduce the basic series resistance a

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is provided, surrounds several easy parts $ 3b; in which there are emitter part zones 54 located »

The practically flat semiconductor surface is covered by an "insulating layer " , over which a component contact 56 and an emitter contact 57 extend "The iSmi door contact 571 38 consists of fingers = 6 | who through fenuter 'y) make contact with the rtaitterfeilaonen 54 tmd with a fttr the pincer 56 ^ m connected in the same part 57 dos'! on clocks, here the single part 31 of the emitter contact and the Baoisicoritikt 5ό form an interdi ^ italos! 'uster, where the part 57 tmd the contact -'. ' kamn, for with * each other *

Oenäac der Srfinliaic a resistance layer extends over the insulating layer 55 as a real layer fSrmifes GeDiet, In this example there are two resistance layers 60 _t which both make contact with several finders fB on the one hand and with the straight part 57 on the other hand, in each of the connecting paths between the fingers 58 and the common part 57 ^e * ⁿ part of a liiderstandsechicht , 60 is added as a series resistor. The liiderstandöschiohten 60 are practically homogeneous and the distance between each of the fingers 58 and the common part 57 as well as the distance between adjacent fingers 58 are dimensioned so that the resistance in the resistance row 60 between two adjacent fingers 58 is less than the resistance in the resistance Bchicht 60 between springs of this pinger 56 and the common part 57 for diö fingers.

The exemplary embodiment according to FIGS. 5 and 6 can be manufactured entirely in a manner customary in semiconductor technology

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■ '' - - -V - "^: -"': ■■ "■:' ■■ '■ - ■ BAD ORIGIMAt

-17- IW, 22Μ

Metallmuatere the contacts kanr done 56 and 57 »38, Here, the Uideretandswert is dee in the contact 57 '58 Reiheirwiderstandes received not only by this material, daa z _t 3. Titanium be can also ßondern on the thickness of the resistive layer 60, the distance between the fingers 58 and the common 7eil -y \ unl depends on the width of the fingers 58. The Basiekontakt ^ 5 and the joint part 57 ^ Hmitterkontakts ^it can in the usual manner Kit connection conductors may be provided, and the semiconductor body Kaiin on /; le ichfalle customary be housed in a shell l / oice.

This sweeping emitter transistor has a direct current distribution of the M

Ctesamtemitterstroms the various Beitterteil2onen at times I3T simple to manufacture, the production ler ReihenwiderstSnde in? Jnitterkontakt not introduce critical Fh. ^ To5tzvorgänge in .F'erti _t jun £ sablauf.

It should be obvious that the TrfinJunf does not respond to the described Execution examples is limited and that for the. ? achaiann im Within the scope of the invention, many developments can be found. The semiconductor body can be made from conventional semiconductor materials such as germanium, germanium or a Αγ-γ-By compound.; -, exist while the insulating layer besides silicon dioxide a.B, it can also consist of silicon nitride. ™

The semiconductor body does not need to consist of an epitaxial Layered substrate to exist, but it can be practically homogeneous be or z.3. consist of a semiconductor body, the conduction of which is old except for a surface layer by diffusion of a dopant is increased. The surface layer and the substrate can also be of different types of conduction,

Furthermore, the pinger dee contacts do not all need to have one

00

separate zone or part of one dee kor. _f to be connected taktier th Halhleiterbaiielerr.ente but it can also-more -'inger. make the same zusanscenhSngendenKalUleitierzone contact, lie aui * £: ^enowioenen: series resistors the Stromverteilim ζ V "about these affect a semiconductor region»

The resistance value for the resistance layer can also be adapted by adapting the dimensions of the master master's fingers to the point at which this conductor iteratively makes contact with the resistance layer .B "gives a widening of the"'ontaictfenötes ¹ an older depreciation of the series contradicting 3 tariff in an i-ters-tandeechicht. ie 3 »

Forner iat it is clear that, e.g. need not run parallel to one another, - but that axjc ".: let there be a certain degree of resistance right to the resistance that is needed for the lost fingers the place of the »Kontalttfenstere 1ό der. Kiders tandßwert the different P.eihenwiderstSnia influencesUBöt.

OOS0O9708ÄO

. BATH

Claims (1)

1. Cold>lf> iter reserve oil; t \ ai <: with cir.on K.-ilbl «iite: ri.i $ rpflr, from data an iraktiseh e" bane plan n with an isolating: ;; Tohicht veraehoi. Int, where dich t! bor lio insulating layer eir. "ontakt erf'treo'r.t, -ler ir.ehi ^? re ". hurry, lie hereinafter referred to as aln '"incer, xxrA tincr. : M'r He rir: t; er c ^e ^ ^e inaamen "'eil?. *: Fweit> t _f where * in each of the verbiiiiuneswece between the finger and döiv tferaeinsar.en ^r eil a series resistance to * ttJi'oirxier . 'is, while' ie Finder -h ^ rch "effinmgei. in the Ieolleraohiohi with the semiconductor body 'Ontakt make, dad-vrjh ^ f ^ ennaeichiiet, dar s few notes several of the mentioned (3r. lvoiiienwiler: jt! L ^r . Ie part of the same M ^ eochlo ^ oenon · ί '* 3ve tatilsschi iht form, 2, KaIt) Ieitervorriohtxuij nach. Λΐ.;. ·· ρr ··: · ".ι 1, clai ^ rc'a f; e" fCoiu..aoi-hnet _f dar-c -.! Er "* ont: ^ t ior!) Ciittörkont" * al; t of a VrtUini-tor i "t. 3 · "albieitervorrichtia.j according to article 1 or 1er C, thereby jokor.n- ziiiclinot that the resistance layer is an ar. ii «surface c ^^ n2ende, in the lIalbleiterV; 3rpor erotreckende Cberflüchor.zore if: t, which is separated by a pn-l: eberjan £ from the adjoining part of the 3IaIbIoiteikbodya &' 4 »Semiconductor servoFrichtvin £; according to claim 3 »thereby t-ekennaoishr ^ e t, that the opposition layer is formed by two suns ^, of which ™ is a "surface zone that passes through in the semiconductor body the second "one is surrounded, the second l ^ one both sitting the CberfiSohenzone as well as with the part of the Semiconductor bodies form a ph-T transition and one of these two jm-üeberg & ige ktirtigeschloseen is " 5 «semiconductor device according to claim 4, characterized in that that the surface zone is divided into several sub-zones, where 009809/0880 Λ · τ vr.-V <-hQT £ 3iiC between each Ίθγ sub-zone and i! Er wide jones short- C ,! Iilbleitleitervorriol.titr.r according to claim 1 or, d; iii; i'ch draws that let «ader« l'ir. leaves alj oin schiahtfBrmiGee Oobiot for the tnclierachi-jUt expects, 7 · Semiconductor device according to one or more of the foregoing Aiu'irCohe, thereby j-ok'nnatiicjlixiet, dise the 'firlero t ^r <ni in the resistances-Bohi', 'ht z.'ißchpii zvroi neighboring Fin ^ err · mindeBteno as well as f; rooe as the' .. "iderütaxid in the '.iideri-itüidoBChicht between each diey finger α vj-A dem fCx "the I'inger eoraeir.canen part of the'l'ontakte let" 8, semiconductor device; according to one or more of the preceding Anoprtlche, characterized in that the counter-dase layer capable of a long ^ etreckte shape with two einajiderirycenßberliegenden lanc ^en ftHndem has _f wherein lSngö one of these ItSnder Bind several pinger with the Wide ro since layer connected tan, wBhrend the i.'ideretandsechicht praktieöh länt * e dee the entire opposite edge is connected to the common part of the contacts, 9 »semiconductor device according to claim 8 | at the common Part provided with an AnechlUBsleiter ietj marked # ■ W. that the resistance layer is a practically homogeneous layer, whereby the shortest distance between a pinger and the common part of the contact of a finger that is close to the attachment point of the mentioned attachment point on the common part is greater than that for a finger that is located at a greater distance from this attachment point. 009809/0880