SE342113B - - Google Patents
Info
- Publication number
- SE342113B SE342113B SE870969A SE870969A SE342113B SE 342113 B SE342113 B SE 342113B SE 870969 A SE870969 A SE 870969A SE 870969 A SE870969 A SE 870969A SE 342113 B SE342113 B SE 342113B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6808722A NL164703C (nl) | 1968-06-21 | 1968-06-21 | Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen. |
Publications (1)
Publication Number | Publication Date |
---|---|
SE342113B true SE342113B (nl) | 1972-01-24 |
Family
ID=19803953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE870969A SE342113B (nl) | 1968-06-21 | 1969-06-18 |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5513587B1 (nl) |
AT (1) | AT320025B (nl) |
BR (1) | BR6909999D0 (nl) |
CH (1) | CH501998A (nl) |
FR (1) | FR2011431A1 (nl) |
GB (2) | GB1278443A (nl) |
NL (1) | NL164703C (nl) |
SE (1) | SE342113B (nl) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7002117A (nl) * | 1970-02-14 | 1971-08-17 | ||
JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
DE3329241A1 (de) * | 1983-08-12 | 1985-02-21 | Siemens AG, 1000 Berlin und 8000 München | Leistungstransistor |
US4617471A (en) * | 1983-12-27 | 1986-10-14 | Kabushiki Kaisha Toshiba | Image sensing device |
NL8403111A (nl) * | 1984-10-12 | 1986-05-01 | Philips Nv | Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze. |
GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
FR2615326B1 (fr) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | Dispositif a semi-conducteurs du type multi-emetteur |
US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
JPH0320953U (nl) * | 1989-07-11 | 1991-02-28 | ||
JPH07109831B2 (ja) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | 半導体装置 |
JP4949650B2 (ja) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9331642B2 (en) | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL296170A (nl) * | 1962-10-04 | |||
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
FR1475075A (fr) * | 1965-03-08 | 1967-03-31 | Int Standard Electric Corp | Dispositif semi-conducteur à haute puissance |
US3506886A (en) * | 1965-03-08 | 1970-04-14 | Itt | High power transistor assembly |
-
1968
- 1968-06-21 NL NL6808722A patent/NL164703C/nl not_active IP Right Cessation
-
1969
- 1969-06-18 SE SE870969A patent/SE342113B/xx unknown
- 1969-06-18 GB GB5868771A patent/GB1278443A/en not_active Expired
- 1969-06-18 GB GB3084669D patent/GB1278442A/en not_active Expired
- 1969-06-18 AT AT576469A patent/AT320025B/de not_active IP Right Cessation
- 1969-06-18 CH CH930369A patent/CH501998A/de not_active IP Right Cessation
- 1969-06-20 BR BR20999969A patent/BR6909999D0/pt unknown
- 1969-06-20 FR FR6920810A patent/FR2011431A1/fr active Pending
-
1975
- 1975-06-03 JP JP6697775A patent/JPS5513587B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL164703C (nl) | 1981-01-15 |
DE1802899A1 (de) | 1970-02-26 |
BR6909999D0 (pt) | 1973-01-02 |
NL164703B (nl) | 1980-08-15 |
DE1802899B2 (de) | 1975-04-24 |
GB1278442A (en) | 1972-06-21 |
JPS5513587B1 (nl) | 1980-04-10 |
NL6808722A (nl) | 1969-12-23 |
CH501998A (de) | 1971-01-15 |
FR2011431A1 (nl) | 1970-02-27 |
AT320025B (de) | 1975-01-27 |
GB1278443A (en) | 1972-06-21 |