AT224353B - - Google Patents

Info

Publication number

AT224353B

AT224353B AT344459A AT344459A AT224353B AT 224353 B AT224353 B AT 224353B AT 344459 A AT344459 A AT 344459A AT 344459 A AT344459 A AT 344459A AT 224353 B AT224353 B AT 224353B

Authority

AT

Austria

Prior art keywords

hall

ferrite

magnetic

air gap

head

Prior art date

1958-05-22

Links

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• 230000005291 magnetic effect Effects 0.000 description 16
• 229910000859 α-Fe Inorganic materials 0.000 description 15
• 239000004065 semiconductor Substances 0.000 description 11
• BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
• 230000006698 induction Effects 0.000 description 5
• XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
• 239000000463 material Substances 0.000 description 4
• 229910052709 silver Inorganic materials 0.000 description 4
• 239000004332 silver Substances 0.000 description 4
• 230000008901 benefit Effects 0.000 description 3
• 238000007740 vapor deposition Methods 0.000 description 3
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 230000008859 change Effects 0.000 description 2
• 239000011248 coating agent Substances 0.000 description 2
• 238000000576 coating method Methods 0.000 description 2
• 239000004020 conductor Substances 0.000 description 2
• 238000005516 engineering process Methods 0.000 description 2
• 238000009413 insulation Methods 0.000 description 2
• 229910052742 iron Inorganic materials 0.000 description 2
• 229910052751 metal Inorganic materials 0.000 description 2
• 239000002184 metal Substances 0.000 description 2
• 238000000034 method Methods 0.000 description 2
• 229910052814 silicon oxide Inorganic materials 0.000 description 2
• 125000006850 spacer group Chemical group 0.000 description 2
• 230000003068 static effect Effects 0.000 description 2
• 239000000126 substance Substances 0.000 description 2
• RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
• 229910000673 Indium arsenide Inorganic materials 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 229910045601 alloy Inorganic materials 0.000 description 1
• 239000000956 alloy Substances 0.000 description 1
• 150000001875 compounds Chemical class 0.000 description 1
• 229910052802 copper Inorganic materials 0.000 description 1
• 239000010949 copper Substances 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 230000005294 ferromagnetic effect Effects 0.000 description 1
• WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
• RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
• 230000001939 inductive effect Effects 0.000 description 1
• WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 238000005259 measurement Methods 0.000 description 1
• 230000015654 memory Effects 0.000 description 1
• TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
• 230000000737 periodic effect Effects 0.000 description 1
• 230000035699 permeability Effects 0.000 description 1
• 239000011148 porous material Substances 0.000 description 1
• 230000008569 process Effects 0.000 description 1
• 230000004044 response Effects 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 239000002002 slurry Substances 0.000 description 1
• 239000002904 solvent Substances 0.000 description 1
• 238000004544 sputter deposition Methods 0.000 description 1